FQA11N90C-F109
  • Share:

onsemi FQA11N90C-F109

Manufacturer No:
FQA11N90C-F109
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 900V 11A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQA11N90C-F109 is an N-channel QFET® enhancement-mode power MOSFET produced by onsemi using their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce ON-state resistance and provide superior switching performance along with high avalanche energy strength. The device is particularly suited for applications in switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)900V
Continuous Drain Current (ID) at 25°C11.0A
Continuous Drain Current (ID) at 100°C6.9A
Pulsed Drain Current (IDM)44.0A
Gate-Source Voltage (VGS)±30V
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 5.5 A0.91 - 1.1Ω
Power Dissipation (PD) at 25°C300W
Thermal Resistance, Junction to Case (RθJC)0.42°C/W
Thermal Resistance, Junction to Ambient (RθJA)40°C/W
Operating and Storage Temperature Range-55 to +150°C
Maximum Lead Temperature for Soldering300°C

Key Features

  • Low gate charge (Typ. 60 nC)
  • Low Crss (Typ. 23 pF)
  • 100% avalanche tested
  • RoHS compliant
  • Low ON-state resistance (RDS(on) = 0.91 - 1.1 Ω at VGS = 10 V, ID = 5.5 A)
  • Superior switching performance
  • High avalanche energy strength

Applications

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts
  • Industrial and power management applications
  • Lighting applications

Q & A

  1. What is the maximum drain-source voltage of the FQA11N90C-F109 MOSFET?
    The maximum drain-source voltage is 900 V.
  2. What is the continuous drain current at 25°C and 100°C?
    The continuous drain current is 11.0 A at 25°C and 6.9 A at 100°C.
  3. What is the gate-source voltage range?
    The gate-source voltage range is ±30 V.
  4. What is the typical gate charge of the FQA11N90C-F109?
    The typical gate charge is 60 nC.
  5. Is the FQA11N90C-F109 RoHS compliant?
    Yes, the FQA11N90C-F109 is RoHS compliant.
  6. What are the typical applications of the FQA11N90C-F109?
    The typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  7. What is the thermal resistance from junction to case (RθJC)?
    The thermal resistance from junction to case is 0.42 °C/W.
  8. What is the maximum power dissipation at 25°C?
    The maximum power dissipation at 25°C is 300 W.
  9. What is the package type of the FQA11N90C-F109?
    The package type is TO-3PN.
  10. What is the operating and storage temperature range?
    The operating and storage temperature range is -55 to +150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.1Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3290 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
0 Remaining View Similar

In Stock

-
128

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQA11N90C-F109 FQA11N90-F109
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 5.5A, 10V 960mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 94 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3290 pF @ 25 V 3500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3PN
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP