Overview
The NTD3055L104 is a power MOSFET produced by onsemi, designed for low voltage, high speed switching applications. This N-Channel, logic level MOSFET is available in DPAK and IPAK packages and is suitable for use in power supplies, converters, power motor controls, and bridge circuits. It is AEC-Q101 qualified and PPAP capable, making it reliable for automotive and other applications requiring unique site and control change requirements. The device is Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Drain-to-Gate Voltage | VDGR | 60 | Vdc |
| Gate-to-Source Voltage, Continuous | VGS | ±15 | Vdc |
| Gate-to-Source Voltage, Non-Repetitive (t ≤ 10 ms) | VGS | ±20 | Vdc |
| Drain Current - Continuous at TA = 25°C | ID | 12 | A |
| Drain Current - Continuous at TA = 100°C | ID | 10 | A |
| Single Pulse Drain Current | IDM | 45 | A |
| Total Power Dissipation at TA = 25°C | PD | 48 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C |
| Static Drain-to-Source On-Resistance | RDS(on) | 89 - 104 | mΩ |
| Gate Threshold Voltage | VGS(th) | 1.0 - 2.0 | Vdc |
Key Features
- Lower RDS(on) for reduced power losses.
- Lower VDS(on) for improved switching performance.
- Tighter VSD specification for better diode characteristics.
- Lower Diode Reverse Recovery Time and Reverse Recovery Stored Charge for faster switching.
- NTDV and STDV prefixes for automotive and other applications requiring unique site and control change requirements.
- AEC-Q101 qualified and PPAP capable.
- Pb-free and RoHS compliant.
Applications
- Power Supplies
- Converters
- Power Motor Controls
- Bridge Circuits
Q & A
- What is the maximum drain-to-source voltage of the NTD3055L104 MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 Vdc.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at TA = 25°C is 12 A.
- What are the typical applications of the NTD3055L104 MOSFET?
Typical applications include power supplies, converters, power motor controls, and bridge circuits.
- Is the NTD3055L104 MOSFET AEC-Q101 qualified?
- What is the static drain-to-source on-resistance (RDS(on)) of the NTD3055L104?
The static drain-to-source on-resistance (RDS(on)) is 89 - 104 mΩ.
- What is the gate threshold voltage range of the NTD3055L104?
The gate threshold voltage (VGS(th)) range is 1.0 - 2.0 Vdc.
- Is the NTD3055L104 Pb-free and RoHS compliant?
- What are the package options available for the NTD3055L104?
The NTD3055L104 is available in DPAK and IPAK packages.
- What is the maximum operating temperature range for the NTD3055L104?
The operating and storage temperature range is -55 to +175°C.
- What is the total power dissipation at TA = 25°C for the NTD3055L104?
The total power dissipation (PD) at TA = 25°C is 48 W.
