NTD3055L104-1G
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onsemi NTD3055L104-1G

Manufacturer No:
NTD3055L104-1G
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 60V 12A IPAK
Delivery:
Payment:
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Product Introduction

Overview

The NTD3055L104-1G is a power MOSFET produced by onsemi, designed for low voltage, high speed switching applications. This N-Channel, logic level MOSFET is packaged in an IPAK (TO-251) case and is Pb-Free and RoHS compliant. It is particularly suited for use in power supplies, converters, power motor controls, and bridge circuits due to its high current handling and low on-resistance characteristics.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain Current - Continuous @ TA = 25°C ID 12 A
Drain Current - Continuous @ TA = 100°C ID 10 A
Single Pulse Drain Current IDM 45 A
Gate-to-Source Voltage, Continuous VGS ±15 Vdc
Gate Threshold Voltage VGS(th) 1.0 - 2.0 Vdc
Static Drain-to-Source On-Resistance RDS(on) 89 - 104
Operating and Storage Temperature Range TJ, Tstg -55 to +175 °C

Key Features

  • Lower RDS(on) for reduced power losses
  • Lower VDS(on) for improved efficiency
  • Tighter VSD specification for better performance consistency
  • Lower Diode Reverse Recovery Time and Reverse Recovery Stored Charge for faster switching
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • Pb-Free and RoHS compliant packaging

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTD3055L104-1G MOSFET?

    The maximum drain-to-source voltage (VDSS) is 60 Vdc.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) at 25°C is 12 A.

  3. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) range is 1.0 to 2.0 Vdc.

  4. Is the NTD3055L104-1G MOSFET Pb-Free and RoHS compliant?
  5. What are the typical applications for this MOSFET?

    Typical applications include power supplies, converters, power motor controls, and bridge circuits.

  6. What is the operating and storage temperature range?

    The operating and storage temperature range is -55 to +175°C.

  7. What is the static drain-to-source on-resistance (RDS(on))?

    The static drain-to-source on-resistance (RDS(on)) is 89 to 104 mΩ.

  8. Is the NTD3055L104-1G AEC-Q101 qualified?
  9. What is the single pulse drain current rating?

    The single pulse drain current (IDM) is 45 A.

  10. What is the gate-to-source voltage continuous rating?

    The gate-to-source voltage (VGS) continuous rating is ±15 Vdc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:104mOhm @ 6A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta), 48W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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In Stock

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