Overview
The onsemi NTD3055L104T4G is an N-Channel power MOSFET designed for high-performance applications requiring low voltage and high speed switching. This device is housed in a TO-252-3 (DPAK) package and is known for its robust specifications and reliability. It is suitable for a variety of applications including power supplies, converters, power motor controls, and bridge circuits. The MOSFET is Pb-free and RoHS compliant, making it an environmentally friendly choice.
Key Specifications
| FET Type | N-Channel |
|---|---|
| Drain-to-Source Voltage (Vdss) | 60 V |
| Drain-Source On Resistance (RDS(on)) | 104 mΩ (Max) @ VGS = 5 V, ID = 6 A |
| Rated Power Dissipation | 48 W |
| Gate Charge (Qg) | 20 nC |
| Package Style | TO-252-3 (DPAK) |
| Mounting Method | Tab Mount |
| Continuous Drain Current (ID) | 12 A @ TA = 25°C, 10 A @ TA = 100°C |
| Single Pulse Drain Current (IDM) | 45 A |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Maximum Lead Temperature for Soldering | 260 °C |
Key Features
- Lower RDS(on) and VDS(on) for improved efficiency and reduced power loss.
- Tighter VGS specification for better gate control.
- Lower Diode Reverse Recovery Time and Reverse Recovery Stored Charge for faster switching.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free and RoHS compliant, ensuring environmental sustainability.
Applications
- Power Supplies: Ideal for high-efficiency power supply designs.
- Converters: Suitable for DC-DC converters and other power conversion applications.
- Power Motor Controls: Used in motor control circuits for efficient and reliable operation.
- Bridge Circuits: Applicable in half-bridge and full-bridge configurations.
Q & A
- What is the maximum drain-to-source voltage of the NTD3055L104T4G MOSFET?
The maximum drain-to-source voltage (Vdss) is 60 V.
- What is the typical on-resistance (RDS(on)) of this MOSFET?
The typical on-resistance (RDS(on)) is 104 mΩ at VGS = 5 V and ID = 6 A.
- What is the rated power dissipation of the NTD3055L104T4G?
The rated power dissipation is 48 W.
- What package style is the NTD3055L104T4G available in?
The MOSFET is available in the TO-252-3 (DPAK) package.
- Is the NTD3055L104T4G RoHS compliant?
Yes, the NTD3055L104T4G is Pb-free and RoHS compliant.
- What are the typical applications of the NTD3055L104T4G MOSFET?
Typical applications include power supplies, converters, power motor controls, and bridge circuits.
- What is the maximum continuous drain current (ID) of the NTD3055L104T4G at 25°C?
The maximum continuous drain current (ID) at 25°C is 12 A.
- What is the single pulse drain current (IDM) of the NTD3055L104T4G?
The single pulse drain current (IDM) is 45 A.
- What is the operating and storage temperature range of the NTD3055L104T4G?
The operating and storage temperature range is -55 to +175 °C.
- Is the NTD3055L104T4G AEC-Q101 qualified?
Yes, the NTD3055L104T4G is AEC-Q101 qualified and PPAP capable.
- What is the maximum lead temperature for soldering the NTD3055L104T4G?
The maximum lead temperature for soldering is 260 °C).
