Overview
The MJD44H11TF, produced by onsemi, is an NPN epitaxial silicon transistor designed for general-purpose power and switching applications. It is part of the DPAK package series, which is optimized for surface-mount applications. This transistor is electrically similar to the popular D44H series and is well-suited for use in output or driver stages in various electronic systems, including switching regulators, converters, and power amplifiers.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Sustaining Voltage | VCEO(sus) | 80 | - | - | Vdc |
| Collector Cutoff Current | ICES | - | - | 1.0 | μA |
| Emitter Cutoff Current | IEBO | - | - | 1.0 | μA |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 1 | Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 1.5 | Vdc |
| DC Current Gain | hFE | 60 | 40 | - | - |
| Collector Capacitance | Ccb | - | - | 45 | pF |
| Gain Bandwidth Product | fT | - | - | 85 | MHz |
| Delay and Rise Times | td + tr | - | - | 300 | ns |
| Storage Time | ts | - | - | 500 | ns |
| Fall Time | tf | - | - | 140 | ns |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 71.4 | °C/W |
| Lead Temperature for Soldering | TL | - | - | 260 | °C |
Key Features
- Lead formed for surface mount application in plastic sleeves (no suffix) and straight lead version in plastic sleeves (“−1” suffix)
- Electrically similar to popular D44H/D45H series
- Low collector-emitter saturation voltage
- Fast switching speeds
- Complementary pairs simplify designs
- Epoxy meets UL 94 V−0 @ 0.125 in
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable
- Pb-free, halogen-free/BFR-free, and RoHS compliant
Applications
The MJD44H11TF is designed for general-purpose power and switching applications, including:
- Output or driver stages in switching regulators, converters, and power amplifiers
- Automotive and other applications requiring unique site and control change requirements
Q & A
- What is the MJD44H11TF transistor used for?
The MJD44H11TF is used for general-purpose power and switching applications, such as output or driver stages in switching regulators, converters, and power amplifiers.
- What package type does the MJD44H11TF come in?
The MJD44H11TF comes in a DPAK package for surface-mount applications.
- What are the key features of the MJD44H11TF?
Key features include low collector-emitter saturation voltage, fast switching speeds, and complementary pairs that simplify designs.
- Is the MJD44H11TF RoHS compliant?
- What is the thermal resistance, junction-to-case (RJC) of the MJD44H11TF?
The thermal resistance, junction-to-case (RJC), is 6.25°C/W.
- What is the maximum collector-emitter sustaining voltage (VCEO(sus)) of the MJD44H11TF?
The maximum collector-emitter sustaining voltage (VCEO(sus)) is 80 Vdc.
- What are the typical DC current gain (hFE) values for the MJD44H11TF?
The typical DC current gain (hFE) values are 60 and 40 for different collector current conditions.
- What is the gain bandwidth product (fT) of the MJD44H11TF?
The gain bandwidth product (fT) is 85 MHz.
- What are the delay and rise times (td + tr) for the MJD44H11TF?
The delay and rise times (td + tr) are 300 ns.
- What is the lead temperature for soldering (TL) of the MJD44H11TF?
The lead temperature for soldering (TL) is 260°C.
