Overview
The 2SC3646S-TD-E is a Bipolar Junction Transistor (BJT) manufactured by onsemi. This transistor is designed as an NPN type, making it suitable for high-voltage switching applications. It features a low VCE(sat) (collector-emitter saturation voltage), which enhances its efficiency in various electronic circuits.
Key Specifications
| Parameter | Value |
|---|---|
| Polarity | NPN |
| Collector-Base Voltage (VCEO) | 100 V |
| Collector-Emitter Voltage (VCE) | 100 V |
| Collector Current (IC) | 1 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.45 V |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.85 V |
| Current Gain (hFE) | 140 - 280 |
| Transition Frequency (fT) | 120 MHz |
| Power Dissipation (PT) | 500 mW |
| Package Type | SOT-89 / PCP-1 |
Key Features
- Low VCE(sat) for efficient switching operations.
- High breakdown voltage and large current capacity, making it suitable for high-voltage applications.
- Ultrasmall size, facilitating high-density and small-sized hybrid ICs.
- Adoption of FBET and MBIT processes for enhanced performance.
Applications
The 2SC3646S-TD-E is primarily used in high-voltage switching applications, including but not limited to:
- Power supply circuits
- Motor control systems
- High-voltage amplifiers
- Automotive electronics
- Industrial control systems
Q & A
- What is the polarity of the 2SC3646S-TD-E transistor?
The 2SC3646S-TD-E is an NPN transistor.
- What is the maximum collector current of the 2SC3646S-TD-E?
The maximum collector current is 1 A.
- What is the collector-emitter saturation voltage (VCE(sat)) of the 2SC3646S-TD-E?
The VCE(sat) is 0.45 V.
- What is the transition frequency (fT) of the 2SC3646S-TD-E?
The transition frequency is 120 MHz.
- What is the power dissipation (PT) of the 2SC3646S-TD-E?
The power dissipation is 500 mW.
- What package type does the 2SC3646S-TD-E come in?
The package type is SOT-89 / PCP-1.
- What are some common applications of the 2SC3646S-TD-E?
Common applications include power supply circuits, motor control systems, high-voltage amplifiers, automotive electronics, and industrial control systems.
- What processes are used in the manufacture of the 2SC3646S-TD-E?
The transistor is manufactured using FBET and MBIT processes.
- Why is the 2SC3646S-TD-E considered efficient for switching operations?
It is considered efficient due to its low VCE(sat).
- Where can I find more detailed specifications and resources for the 2SC3646S-TD-E?
You can find detailed specifications and resources on the onsemi official website, as well as through distributors like Digi-Key and RS Components.
