2SA1416S-TD-E
  • Share:

onsemi 2SA1416S-TD-E

Manufacturer No:
2SA1416S-TD-E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 100V 1A PCP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2SA1416S-TD-E is a high-performance PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for a wide range of applications requiring high breakdown voltage, large current capacity, and fast switching speeds. It features an ultrasmall SOT-89 package, making it ideal for high-density hybrid ICs and surface mount technology. The device is Pb-free and compliant with RoHS, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Parameter Value Unit
Collector to Emitter Voltage (VCEO) 100 V
Collector Current (IC) 1 A
Emitter Base Voltage (VEBO) 6 V
Maximum Power Dissipation (PC) 500 mW
Junction Temperature (TJ) -55 to 150 °C
Storage Temperature (TSTG) -55 to 150 °C
DC Current Gain (hFE) @ 100mA, 5V 100 to 400
Gain-Bandwidth Product (fT) 120 MHz
Collector to Emitter Saturation Voltage (VCE(sat)) @ 400mA, 40mA 0.4 V
Package Type SOT-89 / PCP-1
Mounting Type Surface Mount

Key Features

  • High Breakdown Voltage and Large Current Capacity: The 2SA1416S-TD-E offers a maximum collector-emitter voltage of 100V and a maximum collector current of 1A, making it suitable for high-power applications.
  • Fast Switching Speed: With a gain-bandwidth product of 120MHz, this transistor ensures fast switching times, which is crucial for high-frequency applications.
  • Ultrasmall Package: The SOT-89 package is compact, facilitating high-density hybrid ICs and surface mount designs.
  • Environmental Compliance: The device is Pb-free and RoHS compliant, ensuring it meets environmental and regulatory standards.
  • Low VCE(sat): The transistor features a low collector-emitter saturation voltage, which helps in reducing power losses and improving efficiency.

Applications

The 2SA1416S-TD-E is versatile and can be used in a variety of applications, including:

  • Power Amplifiers: Due to its high current and voltage handling capabilities, it is suitable for power amplifier circuits.
  • Switching Circuits: The fast switching speed makes it ideal for switching applications in power supplies, motor control, and other high-frequency circuits.
  • Hybrid ICs: The ultrasmall package size makes it a good fit for high-density hybrid IC designs.
  • Automotive and Industrial Control Systems: Its robust specifications and environmental compliance make it suitable for use in automotive and industrial control systems.

Q & A

  1. What is the maximum collector-emitter voltage of the 2SA1416S-TD-E?

    The maximum collector-emitter voltage is 100V.

  2. What is the maximum collector current of the 2SA1416S-TD-E?

    The maximum collector current is 1A.

  3. What is the gain-bandwidth product of the 2SA1416S-TD-E?

    The gain-bandwidth product is 120MHz.

  4. What is the package type of the 2SA1416S-TD-E?

    The package type is SOT-89 / PCP-1.

  5. Is the 2SA1416S-TD-E RoHS compliant?

    Yes, the device is Pb-free and RoHS compliant.

  6. What is the operating temperature range of the 2SA1416S-TD-E?

    The operating temperature range is -55°C to 150°C.

  7. What is the maximum power dissipation of the 2SA1416S-TD-E?

    The maximum power dissipation is 500mW.

  8. What is the DC current gain (hFE) of the 2SA1416S-TD-E at 100mA and 5V?

    The DC current gain (hFE) is between 100 and 400.

  9. What is the collector-emitter saturation voltage (VCE(sat)) of the 2SA1416S-TD-E?

    The collector-emitter saturation voltage (VCE(sat)) is 0.4V at 400mA and 40mA.

  10. How is the 2SA1416S-TD-E packaged for shipping?

    The device is shipped in tape and reel packaging.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 40mA, 400mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
Power - Max:500 mW
Frequency - Transition:120MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PCP
0 Remaining View Similar

In Stock

$0.60
627

Please send RFQ , we will respond immediately.

Same Series
2SA1416S-TD-E
2SA1416S-TD-E
TRANS PNP 100V 1A PCP
2SA1416T-TD-E
2SA1416T-TD-E
TRANS PNP 100V 1A PCP
2SC3646T-TD-E
2SC3646T-TD-E
TRANS NPN 100V 1A PCP

Similar Products

Part Number 2SA1416S-TD-E 2SA1418S-TD-E 2SA1416T-TD-E 2SA1419S-TD-E 2SA1417S-TD-E 2SA1415S-TD-E
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
Transistor Type PNP PNP PNP PNP PNP -
Current - Collector (Ic) (Max) 1 A 700 mA 1 A 1.5 A 2 A -
Voltage - Collector Emitter Breakdown (Max) 100 V 160 V 100 V 160 V 100 V -
Vce Saturation (Max) @ Ib, Ic 400mV @ 40mA, 400mA 400mV @ 25mA, 250mA 400mV @ 40mA, 400mA 500mV @ 50mA, 500mA 400mV @ 100mA, 1A -
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 1µA (ICBO) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V 100 @ 100mA, 5V 100 @ 100mA, 5V 100 @ 100mA, 5V 100 @ 100mA, 5V -
Power - Max 500 mW 500 mW 500 mW 500 mW 500 mW -
Frequency - Transition 120MHz 120MHz 120MHz 120MHz 120MHz -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA -
Supplier Device Package PCP PCP PCP PCP PCP -

Related Product By Categories

PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC857AMTF
BC857AMTF
Fairchild Semiconductor
TRANS PNP 45V 0.1A SOT23-3
BCP69E6327
BCP69E6327
Infineon Technologies
POWER BIPOLAR TRANSISTOR
MMBT4124LT1G
MMBT4124LT1G
onsemi
TRANS NPN 25V 0.2A SOT23-3
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
MJB44H11G
MJB44H11G
onsemi
TRANS NPN 80V 10A D2PAK
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
TIP122TU
TIP122TU
Fairchild Semiconductor
TRANS NPN DARL 100V 5A TO220-3
MMBT3906L3-TP
MMBT3906L3-TP
Micro Commercial Co
TRANS PNP 40V 0.2A DFN1006-3
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
BC846B/SNVL
BC846B/SNVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB

Related Product By Brand

1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
LM317MDTG
LM317MDTG
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC