Overview
The 2SA1416S-TD-E is a high-performance PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for a wide range of applications requiring high breakdown voltage, large current capacity, and fast switching speeds. It features an ultrasmall SOT-89 package, making it ideal for high-density hybrid ICs and surface mount technology. The device is Pb-free and compliant with RoHS, ensuring environmental sustainability and regulatory compliance.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Collector to Emitter Voltage (VCEO) | 100 | V |
Collector Current (IC) | 1 | A |
Emitter Base Voltage (VEBO) | 6 | V |
Maximum Power Dissipation (PC) | 500 | mW |
Junction Temperature (TJ) | -55 to 150 | °C |
Storage Temperature (TSTG) | -55 to 150 | °C |
DC Current Gain (hFE) @ 100mA, 5V | 100 to 400 | |
Gain-Bandwidth Product (fT) | 120 | MHz |
Collector to Emitter Saturation Voltage (VCE(sat)) @ 400mA, 40mA | 0.4 | V |
Package Type | SOT-89 / PCP-1 | |
Mounting Type | Surface Mount |
Key Features
- High Breakdown Voltage and Large Current Capacity: The 2SA1416S-TD-E offers a maximum collector-emitter voltage of 100V and a maximum collector current of 1A, making it suitable for high-power applications.
- Fast Switching Speed: With a gain-bandwidth product of 120MHz, this transistor ensures fast switching times, which is crucial for high-frequency applications.
- Ultrasmall Package: The SOT-89 package is compact, facilitating high-density hybrid ICs and surface mount designs.
- Environmental Compliance: The device is Pb-free and RoHS compliant, ensuring it meets environmental and regulatory standards.
- Low VCE(sat): The transistor features a low collector-emitter saturation voltage, which helps in reducing power losses and improving efficiency.
Applications
The 2SA1416S-TD-E is versatile and can be used in a variety of applications, including:
- Power Amplifiers: Due to its high current and voltage handling capabilities, it is suitable for power amplifier circuits.
- Switching Circuits: The fast switching speed makes it ideal for switching applications in power supplies, motor control, and other high-frequency circuits.
- Hybrid ICs: The ultrasmall package size makes it a good fit for high-density hybrid IC designs.
- Automotive and Industrial Control Systems: Its robust specifications and environmental compliance make it suitable for use in automotive and industrial control systems.
Q & A
- What is the maximum collector-emitter voltage of the 2SA1416S-TD-E?
The maximum collector-emitter voltage is 100V.
- What is the maximum collector current of the 2SA1416S-TD-E?
The maximum collector current is 1A.
- What is the gain-bandwidth product of the 2SA1416S-TD-E?
The gain-bandwidth product is 120MHz.
- What is the package type of the 2SA1416S-TD-E?
The package type is SOT-89 / PCP-1.
- Is the 2SA1416S-TD-E RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What is the operating temperature range of the 2SA1416S-TD-E?
The operating temperature range is -55°C to 150°C.
- What is the maximum power dissipation of the 2SA1416S-TD-E?
The maximum power dissipation is 500mW.
- What is the DC current gain (hFE) of the 2SA1416S-TD-E at 100mA and 5V?
The DC current gain (hFE) is between 100 and 400.
- What is the collector-emitter saturation voltage (VCE(sat)) of the 2SA1416S-TD-E?
The collector-emitter saturation voltage (VCE(sat)) is 0.4V at 400mA and 40mA.
- How is the 2SA1416S-TD-E packaged for shipping?
The device is shipped in tape and reel packaging.