2SA1416S-TD-E
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onsemi 2SA1416S-TD-E

Manufacturer No:
2SA1416S-TD-E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 100V 1A PCP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2SA1416S-TD-E is a high-performance PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for a wide range of applications requiring high breakdown voltage, large current capacity, and fast switching speeds. It features an ultrasmall SOT-89 package, making it ideal for high-density hybrid ICs and surface mount technology. The device is Pb-free and compliant with RoHS, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Parameter Value Unit
Collector to Emitter Voltage (VCEO) 100 V
Collector Current (IC) 1 A
Emitter Base Voltage (VEBO) 6 V
Maximum Power Dissipation (PC) 500 mW
Junction Temperature (TJ) -55 to 150 °C
Storage Temperature (TSTG) -55 to 150 °C
DC Current Gain (hFE) @ 100mA, 5V 100 to 400
Gain-Bandwidth Product (fT) 120 MHz
Collector to Emitter Saturation Voltage (VCE(sat)) @ 400mA, 40mA 0.4 V
Package Type SOT-89 / PCP-1
Mounting Type Surface Mount

Key Features

  • High Breakdown Voltage and Large Current Capacity: The 2SA1416S-TD-E offers a maximum collector-emitter voltage of 100V and a maximum collector current of 1A, making it suitable for high-power applications.
  • Fast Switching Speed: With a gain-bandwidth product of 120MHz, this transistor ensures fast switching times, which is crucial for high-frequency applications.
  • Ultrasmall Package: The SOT-89 package is compact, facilitating high-density hybrid ICs and surface mount designs.
  • Environmental Compliance: The device is Pb-free and RoHS compliant, ensuring it meets environmental and regulatory standards.
  • Low VCE(sat): The transistor features a low collector-emitter saturation voltage, which helps in reducing power losses and improving efficiency.

Applications

The 2SA1416S-TD-E is versatile and can be used in a variety of applications, including:

  • Power Amplifiers: Due to its high current and voltage handling capabilities, it is suitable for power amplifier circuits.
  • Switching Circuits: The fast switching speed makes it ideal for switching applications in power supplies, motor control, and other high-frequency circuits.
  • Hybrid ICs: The ultrasmall package size makes it a good fit for high-density hybrid IC designs.
  • Automotive and Industrial Control Systems: Its robust specifications and environmental compliance make it suitable for use in automotive and industrial control systems.

Q & A

  1. What is the maximum collector-emitter voltage of the 2SA1416S-TD-E?

    The maximum collector-emitter voltage is 100V.

  2. What is the maximum collector current of the 2SA1416S-TD-E?

    The maximum collector current is 1A.

  3. What is the gain-bandwidth product of the 2SA1416S-TD-E?

    The gain-bandwidth product is 120MHz.

  4. What is the package type of the 2SA1416S-TD-E?

    The package type is SOT-89 / PCP-1.

  5. Is the 2SA1416S-TD-E RoHS compliant?

    Yes, the device is Pb-free and RoHS compliant.

  6. What is the operating temperature range of the 2SA1416S-TD-E?

    The operating temperature range is -55°C to 150°C.

  7. What is the maximum power dissipation of the 2SA1416S-TD-E?

    The maximum power dissipation is 500mW.

  8. What is the DC current gain (hFE) of the 2SA1416S-TD-E at 100mA and 5V?

    The DC current gain (hFE) is between 100 and 400.

  9. What is the collector-emitter saturation voltage (VCE(sat)) of the 2SA1416S-TD-E?

    The collector-emitter saturation voltage (VCE(sat)) is 0.4V at 400mA and 40mA.

  10. How is the 2SA1416S-TD-E packaged for shipping?

    The device is shipped in tape and reel packaging.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 40mA, 400mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
Power - Max:500 mW
Frequency - Transition:120MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PCP
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Similar Products

Part Number 2SA1416S-TD-E 2SA1418S-TD-E 2SA1416T-TD-E 2SA1419S-TD-E 2SA1417S-TD-E 2SA1415S-TD-E
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
Transistor Type PNP PNP PNP PNP PNP -
Current - Collector (Ic) (Max) 1 A 700 mA 1 A 1.5 A 2 A -
Voltage - Collector Emitter Breakdown (Max) 100 V 160 V 100 V 160 V 100 V -
Vce Saturation (Max) @ Ib, Ic 400mV @ 40mA, 400mA 400mV @ 25mA, 250mA 400mV @ 40mA, 400mA 500mV @ 50mA, 500mA 400mV @ 100mA, 1A -
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 1µA (ICBO) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V 100 @ 100mA, 5V 100 @ 100mA, 5V 100 @ 100mA, 5V 100 @ 100mA, 5V -
Power - Max 500 mW 500 mW 500 mW 500 mW 500 mW -
Frequency - Transition 120MHz 120MHz 120MHz 120MHz 120MHz -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA -
Supplier Device Package PCP PCP PCP PCP PCP -

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