Overview
The 2SA1419S-TD-E is a PNP bipolar transistor produced by onsemi, designed for high-performance applications requiring low collector-to-emitter saturation voltage (VCE(sat)) and high current capacity. This transistor is part of the 2SA1419/2SC3649 series, which includes both PNP and NPN types. It is packaged in a small SOT-89 (PCP) package, making it suitable for high-density, small-sized hybrid ICs and various electronic circuits.
Key Specifications
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Collector-to-Base Voltage | VCBO | - | -180 | V |
| Collector-to-Emitter Voltage | VCEO | - | -160 | V |
| Emitter-to-Base Voltage | VEBO | - | -6 | V |
| Collector Current | IC | - | -1.5 | A |
| Collector Current (Pulse) | ICP | - | -2.5 | A |
| Collector Dissipation | PC | Mounted on ceramic substrate (250mm² x 0.8mm) | 1.5 | W |
| Junction Temperature | Tj | - | 150 | °C |
| Storage Temperature | Tstg | - | -55 to +150 | °C |
| DC Current Gain (hFE1) | hFE1 | VCE = -5V, IC = -100mA | 100 to 400 | - |
| Gain-Bandwidth Product | fT | VCE = -10V, IC = -50mA | 120 | MHz |
| Collector-to-Emitter Saturation Voltage | VCE(sat) | IC = -500mA, IB = -50mA | -200 to -130 | mV |
| Base-to-Emitter Saturation Voltage | VBE(sat) | IC = -500mA, IB = -50mA | -0.85 to -1.2 | V |
Key Features
- Adoption of FBET, MBIT processes: Enhances performance and reliability.
- High breakdown voltage and large current capacity: Supports high-voltage and high-current applications.
- Ultrasmall size: Facilitates high-density, small-sized hybrid ICs.
- Low VCE(sat): Reduces power loss and improves efficiency.
- Pb-Free and Halogen-Free options: Compliant with environmental regulations.
Applications
The 2SA1419S-TD-E is suitable for a variety of applications, including:
- Power amplifiers and switching circuits: Due to its high current capacity and low VCE(sat).
- High-density hybrid ICs: Benefiting from its small SOT-89 package.
- Automotive and industrial control systems: Where high reliability and performance are critical.
- Audio and video equipment: For applications requiring low noise and high fidelity.
Q & A
- What is the maximum collector-to-emitter voltage for the 2SA1419S-TD-E?
The maximum collector-to-emitter voltage (VCEO) is -160V. - What is the maximum collector current for this transistor?
The maximum collector current (IC) is -1.5A, with a pulse current (ICP) of up to -2.5A. - What is the typical DC current gain (hFE) for this transistor?
The typical DC current gain (hFE1) ranges from 100 to 400 at VCE = -5V and IC = -100mA. - What is the gain-bandwidth product (fT) of the 2SA1419S-TD-E?
The gain-bandwidth product (fT) is 120 MHz at VCE = -10V and IC = -50mA. - What is the collector-to-emitter saturation voltage (VCE(sat)) for this transistor?
The collector-to-emitter saturation voltage (VCE(sat)) is between -200mV and -130mV at IC = -500mA and IB = -50mA. - What are the package options for the 2SA1419S-TD-E?
The transistor is packaged in a SOT-89 (PCP) package, available in Pb-Free and Halogen-Free versions. - What is the junction temperature range for this transistor?
The junction temperature (Tj) range is up to 150°C. - What are some common applications for the 2SA1419S-TD-E?
Common applications include power amplifiers, switching circuits, high-density hybrid ICs, automotive and industrial control systems, and audio/video equipment. - How is the 2SA1419S-TD-E shipped?
The transistor is shipped in reels of 1,000 pieces. - Is the 2SA1419S-TD-E environmentally compliant?
Yes, it is available in Pb-Free and Halogen-Free versions, making it compliant with environmental regulations.
