BC847BQB-QZ
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Nexperia USA Inc. BC847BQB-QZ

Manufacturer No:
BC847BQB-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
SMALL SIGNAL BIPOLAR IN DFN PACK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BQB-QZ is a high-performance NPN general-purpose bipolar junction transistor (BJT) produced by Nexperia USA Inc. This transistor is designed to offer high power dissipation capability and is suitable for a variety of applications requiring reliable and efficient switching or amplification. The BC847BQB-QZ features a compact DFN1110D-3 surface mount package, making it ideal for space-constrained designs.

Key Specifications

ParameterValue
Transistor TypeNPN
Collector-Base Voltage (Vcb)45 V
Collector-Emitter Voltage (Vce)45 V
Emitter-Base Voltage (Veb)5 V
Collector Current (Ic)100 mA
Power Dissipation (Pd)340 mW
Transition Frequency (ft)100 MHz
Package TypeDFN1110D-3

Key Features

  • High power dissipation capability
  • Compact DFN1110D-3 surface mount package with wettable flanks for Automatic Optical Inspection (AOI) of solder joints
  • High transition frequency of 100 MHz, suitable for high-frequency applications
  • Low noise and high current gain, making it suitable for amplification and switching applications

Applications

The BC847BQB-QZ is versatile and can be used in a variety of applications, including:

  • General-purpose amplification and switching circuits
  • Audio amplifiers and signal processing
  • Automotive and industrial control systems
  • Consumer electronics and home appliances

Q & A

  1. What is the collector-base voltage of the BC847BQB-QZ transistor?
    The collector-base voltage (Vcb) of the BC847BQB-QZ transistor is 45 V.
  2. What is the maximum collector current of the BC847BQB-QZ transistor?
    The maximum collector current (Ic) of the BC847BQB-QZ transistor is 100 mA.
  3. What is the power dissipation capability of the BC847BQB-QZ transistor?
    The power dissipation capability (Pd) of the BC847BQB-QZ transistor is 340 mW.
  4. What is the transition frequency of the BC847BQB-QZ transistor?
    The transition frequency (ft) of the BC847BQB-QZ transistor is 100 MHz.
  5. What type of package does the BC847BQB-QZ transistor use?
    The BC847BQB-QZ transistor uses a DFN1110D-3 surface mount package.
  6. Is the BC847BQB-QZ suitable for high-frequency applications?
    Yes, the BC847BQB-QZ is suitable for high-frequency applications due to its high transition frequency of 100 MHz.
  7. Can the BC847BQB-QZ be used in automotive applications?
    Yes, the BC847BQB-QZ can be used in automotive and industrial control systems due to its robust specifications.
  8. What are the advantages of the DFN1110D-3 package used by the BC847BQB-QZ?
    The DFN1110D-3 package offers a smaller footprint and is suitable for Automatic Optical Inspection (AOI) of solder joints, making it ideal for space-constrained designs.
  9. Where can I find detailed specifications for the BC847BQB-QZ transistor?
    Detailed specifications for the BC847BQB-QZ transistor can be found in the datasheet available on Nexperia's official website or through distributors like Digi-Key.
  10. What are some common applications for the BC847BQB-QZ transistor?
    The BC847BQB-QZ transistor is commonly used in general-purpose amplification and switching circuits, audio amplifiers, and consumer electronics.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:340 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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