BC857BWE6327
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Infineon Technologies BC857BWE6327

Manufacturer No:
BC857BWE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BWE6327 is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BC857 series, known for its reliability and versatility in various electronic applications. The BC857BWE6327 is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. It is packaged in a small SOT-323 (SC-70-3) case, which is ideal for surface-mount technology (SMT) and space-constrained designs.

Key Specifications

Parameter Value Unit
Transistor Polarity PNP
Configuration Single
Collector-Base Voltage (VCBO) 50 V
Collector-Emitter Voltage (VCEO) 45 V
Emitter-Base Voltage (VEBO) 5 V
Maximum DC Collector Current 100 mA
Power Dissipation (Pd) 400 mW
Gain Bandwidth Product (fT) 100 MHz
Minimum Operating Temperature -55 °C
Maximum Operating Temperature 150 °C
DC Current Gain (hfe) Min 220 at 2 mA, 5 V
Collector-Emitter Saturation Voltage (VCE(sat)) 0.3 V at IC = 10 mA, IB = 0.5 mA
Base-Emitter Saturation Voltage (VBE(sat)) 0.7 V at IC = 10 mA, IB = 0.5 mA
Package / Case SOT-323 (SC-70-3)
Mounting Style SMD/SMT

Key Features

  • AEC-Q101 Qualified: Suitable for automotive and other high-reliability applications.
  • Small Package: SOT-323 (SC-70-3) package for space-efficient designs.
  • High Current Gain: Minimum DC current gain (hfe) of 220 at 2 mA and 5 V.
  • Low Saturation Voltage: Collector-Emitter saturation voltage of 0.3 V at IC = 10 mA and IB = 0.5 mA.
  • Wide Operating Temperature Range: From -55°C to 150°C.
  • High Gain Bandwidth Product: 100 MHz, suitable for high-frequency applications.

Applications

  • Automotive Systems: Due to its AEC-Q101 qualification, it is widely used in automotive electronics for reliable switching and amplification.
  • High-Speed Switching: Suitable for high-speed switching applications due to its low saturation voltage and high gain bandwidth product.
  • Motor Control: Used in motor control circuits for efficient and reliable operation.
  • Audio Amplifiers: Employed in audio amplifier circuits for its good current gain and low noise characteristics.
  • General Purpose Amplification: Used in various general-purpose amplification and switching circuits.

Q & A

  1. What is the transistor polarity of the BC857BWE6327?

    The BC857BWE6327 is a PNP bipolar junction transistor.

  2. What is the maximum collector-emitter voltage (VCEO) of the BC857BWE6327?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  3. What is the package type of the BC857BWE6327?

    The BC857BWE6327 is packaged in a SOT-323 (SC-70-3) case.

  4. Is the BC857BWE6327 AEC-Q101 qualified?
  5. What is the minimum DC current gain (hfe) of the BC857BWE6327?

    The minimum DC current gain (hfe) is 220 at 2 mA and 5 V.

  6. What is the maximum operating temperature of the BC857BWE6327?

    The maximum operating temperature is 150°C.

  7. What is the gain bandwidth product (fT) of the BC857BWE6327?

    The gain bandwidth product (fT) is 100 MHz.

  8. What are some common applications of the BC857BWE6327?
  9. What is the collector-emitter saturation voltage (VCE(sat)) of the BC857BWE6327?
  10. What is the base-emitter saturation voltage (VBE(sat)) of the BC857BWE6327?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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Similar Products

Part Number BC857BWE6327 BC857BWH6327 BC857B E6327 BC857BE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 250 mW 250 mW 330 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT323 PG-SOT323-3-1 PG-SOT23 PG-SOT23

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