BC857BWE6327
  • Share:

Infineon Technologies BC857BWE6327

Manufacturer No:
BC857BWE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BWE6327 is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BC857 series, known for its reliability and versatility in various electronic applications. The BC857BWE6327 is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. It is packaged in a small SOT-323 (SC-70-3) case, which is ideal for surface-mount technology (SMT) and space-constrained designs.

Key Specifications

Parameter Value Unit
Transistor Polarity PNP
Configuration Single
Collector-Base Voltage (VCBO) 50 V
Collector-Emitter Voltage (VCEO) 45 V
Emitter-Base Voltage (VEBO) 5 V
Maximum DC Collector Current 100 mA
Power Dissipation (Pd) 400 mW
Gain Bandwidth Product (fT) 100 MHz
Minimum Operating Temperature -55 °C
Maximum Operating Temperature 150 °C
DC Current Gain (hfe) Min 220 at 2 mA, 5 V
Collector-Emitter Saturation Voltage (VCE(sat)) 0.3 V at IC = 10 mA, IB = 0.5 mA
Base-Emitter Saturation Voltage (VBE(sat)) 0.7 V at IC = 10 mA, IB = 0.5 mA
Package / Case SOT-323 (SC-70-3)
Mounting Style SMD/SMT

Key Features

  • AEC-Q101 Qualified: Suitable for automotive and other high-reliability applications.
  • Small Package: SOT-323 (SC-70-3) package for space-efficient designs.
  • High Current Gain: Minimum DC current gain (hfe) of 220 at 2 mA and 5 V.
  • Low Saturation Voltage: Collector-Emitter saturation voltage of 0.3 V at IC = 10 mA and IB = 0.5 mA.
  • Wide Operating Temperature Range: From -55°C to 150°C.
  • High Gain Bandwidth Product: 100 MHz, suitable for high-frequency applications.

Applications

  • Automotive Systems: Due to its AEC-Q101 qualification, it is widely used in automotive electronics for reliable switching and amplification.
  • High-Speed Switching: Suitable for high-speed switching applications due to its low saturation voltage and high gain bandwidth product.
  • Motor Control: Used in motor control circuits for efficient and reliable operation.
  • Audio Amplifiers: Employed in audio amplifier circuits for its good current gain and low noise characteristics.
  • General Purpose Amplification: Used in various general-purpose amplification and switching circuits.

Q & A

  1. What is the transistor polarity of the BC857BWE6327?

    The BC857BWE6327 is a PNP bipolar junction transistor.

  2. What is the maximum collector-emitter voltage (VCEO) of the BC857BWE6327?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  3. What is the package type of the BC857BWE6327?

    The BC857BWE6327 is packaged in a SOT-323 (SC-70-3) case.

  4. Is the BC857BWE6327 AEC-Q101 qualified?
  5. What is the minimum DC current gain (hfe) of the BC857BWE6327?

    The minimum DC current gain (hfe) is 220 at 2 mA and 5 V.

  6. What is the maximum operating temperature of the BC857BWE6327?

    The maximum operating temperature is 150°C.

  7. What is the gain bandwidth product (fT) of the BC857BWE6327?

    The gain bandwidth product (fT) is 100 MHz.

  8. What are some common applications of the BC857BWE6327?
  9. What is the collector-emitter saturation voltage (VCE(sat)) of the BC857BWE6327?
  10. What is the base-emitter saturation voltage (VBE(sat)) of the BC857BWE6327?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
0 Remaining View Similar

In Stock

$0.02
18,692

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC857BWE6327 BC857BWH6327 BC857B E6327 BC857BE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 250 mW 250 mW 330 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT323 PG-SOT323-3-1 PG-SOT23 PG-SOT23

Related Product By Categories

BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BC807-25B5000
BC807-25B5000
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
SBC846ALT1G
SBC846ALT1G
onsemi
TRANS NPN 65V 0.1A SOT23-3
BC817-16W,135
BC817-16W,135
NXP USA Inc.
NOW NEXPERIA BC817-16W - SMALL S
SMMBTA56LT1G
SMMBTA56LT1G
onsemi
TRANS PNP 80V 0.5A SOT23-3
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MJD50TF
MJD50TF
onsemi
TRANS NPN 400V 1A DPAK
BU806 PBFREE
BU806 PBFREE
Central Semiconductor Corp
TRANS NPN 400V 8A TO220-3
BC847CW/ZLF
BC847CW/ZLF
Nexperia USA Inc.
TRANS SOT323
BC857CW/DG/B4F
BC857CW/DG/B4F
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70
BC817-25-QR
BC817-25-QR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB

Related Product By Brand

BC847PNH6727XTSA1
BC847PNH6727XTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC847PNE6433BTMA1
BC847PNE6433BTMA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
IRF9530NPBF
IRF9530NPBF
Infineon Technologies
MOSFET P-CH 100V 14A TO220AB
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
IRF630NPBF
IRF630NPBF
Infineon Technologies
MOSFET N-CH 200V 9.3A TO220AB
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
BCV61BE6327
BCV61BE6327
Infineon Technologies
TRANSISTORS FOR CURRENT MIRROR
ICE2PCS02GXUMA1
ICE2PCS02GXUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
BTS462TATMA1
BTS462TATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
BTS711L1XUMA1
BTS711L1XUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
CY7C68013A-100AXC
CY7C68013A-100AXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 100LQFP