IRF640NSTRLPBF
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Infineon Technologies IRF640NSTRLPBF

Manufacturer No:
IRF640NSTRLPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 18A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF640NSTRLPBF is a high-performance N-Channel MOSFET produced by Infineon Technologies. This device is part of the HEXFET family and is known for its high current and voltage handling capabilities, making it suitable for a variety of power management and switching applications. The IRF640NSTRLPBF is packaged in a 3-pin D2PAK (TO-263) package, which is designed for surface mount applications and offers good thermal performance.

Key Specifications

ParameterValue
Drain-Source Voltage (VDS)200 V
Drain Current (ID)18 A
Gate-Source Voltage (VGS)±20 V
On Resistance (RDS(on))0.18 Ω (at VGS = 10 V, ID = 18 A)
Junction-to-Ambient Thermal Resistance (RθJA)62 °C/W (without PCB), 40 °C/W (with PCB mount)
Operating Junction Temperature (TJ)-55 to 175 °C
Package Type3-pin D2PAK (TO-263)

Key Features

  • High drain current of 18 A and high drain-source voltage of 200 V, making it suitable for high-power applications.
  • Low on-resistance (RDS(on)) of 0.18 Ω at VGS = 10 V, ID = 18 A, which reduces power losses.
  • High junction-to-ambient thermal resistance, ensuring good thermal performance when mounted on a PCB.
  • Wide operating junction temperature range from -55 °C to 175 °C.
  • Surface mount D2PAK package for easy integration into modern designs.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching and amplification in audio and industrial equipment.
  • High-frequency switching applications.
  • General-purpose power switching.

Q & A

  1. What is the maximum drain current of the IRF640NSTRLPBF?
    The maximum drain current is 18 A.
  2. What is the maximum drain-source voltage of the IRF640NSTRLPBF?
    The maximum drain-source voltage is 200 V.
  3. What is the typical on-resistance of the IRF640NSTRLPBF?
    The typical on-resistance is 0.18 Ω at VGS = 10 V, ID = 18 A.
  4. What is the operating junction temperature range of the IRF640NSTRLPBF?
    The operating junction temperature range is from -55 °C to 175 °C.
  5. What type of package does the IRF640NSTRLPBF come in?
    The IRF640NSTRLPBF comes in a 3-pin D2PAK (TO-263) package.
  6. Is the IRF640NSTRLPBF suitable for surface mount applications?
    Yes, it is designed for surface mount applications.
  7. What are some common applications of the IRF640NSTRLPBF?
    Common applications include power supplies, motor control, switching and amplification in audio and industrial equipment, and high-frequency switching.
  8. How should I handle thermal management for the IRF640NSTRLPBF?
    For optimal thermal performance, it is recommended to mount the device on a PCB. Refer to application note #AN-994 for recommended footprint and soldering techniques.
  9. Can the IRF640NSTRLPBF be used in high-power switching applications?
    Yes, it is suitable for high-power switching applications due to its high current and voltage handling capabilities.
  10. What are the key benefits of using the IRF640NSTRLPBF in power management systems?
    The key benefits include low on-resistance, high thermal performance, and a wide operating temperature range, which reduce power losses and enhance system reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1160 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRF640NSTRLPBF IRF640STRLPBF IRF640NSTRRPBF IRF644NSTRLPBF IRF630NSTRLPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Active Active Not For New Designs Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 250 V 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc) 18A (Tc) 14A (Tc) 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 11A, 10V 180mOhm @ 11A, 10V 150mOhm @ 11A, 10V 240mOhm @ 8.4A, 10V 300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V 70 nC @ 10 V 67 nC @ 10 V 54 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 25 V 1300 pF @ 25 V 1160 pF @ 25 V 1060 pF @ 25 V 575 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 150W (Tc) 3.1W (Ta), 130W (Tc) 150W (Tc) 150W (Tc) 82W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D2PAK D²PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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