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IRF640NPBF
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Infineon Technologies IRF640NPBF

Manufacturer No:
IRF640NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 200V 18A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The IRF640NPbF is a 200V single N-channel MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is available in a TO-220 package, an industry standard through-hole power package, making it easy to integrate into various designs. The device is optimized for applications switching below 100kHz and is known for its high-current rating and rugged design.

Key Specifications

ParameterValue
Drain-to-Source Voltage (VDSS)200V
On-Resistance (RDS(on))0.15Ω
Drain Current (ID)18A
Operating Junction Temperature-55°C to 175°C
Junction-to-Ambient Thermal Resistance (RθJA)62°C/W (without PCB), 40°C/W (with PCB)
PackageTO-220

Key Features

  • Planar cell structure for wide Safe Operating Area (SOA)
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below 100kHz
  • Industry standard through-hole power package
  • High-current rating
  • Increased ruggedness
  • Fast switching speed
  • Fully avalanche rated
  • Ease of paralleling
  • Simple drive requirements

Applications

The IRF640NPbF is suitable for a variety of applications, including DC motors, inverters, Switch-Mode Power Supplies (SMPS), lighting, load switches, and battery-powered applications.

Q & A

  1. What is the maximum drain-to-source voltage of the IRF640NPbF?
    The maximum drain-to-source voltage (VDSS) is 200V.
  2. What is the on-resistance (RDS(on)) of the IRF640NPbF?
    The on-resistance (RDS(on)) is 0.15Ω.
  3. What is the maximum drain current (ID) of the IRF640NPbF?
    The maximum drain current (ID) is 18A.
  4. What is the operating junction temperature range of the IRF640NPbF?
    The operating junction temperature range is -55°C to 175°C.
  5. What package type is the IRF640NPbF available in?
    The IRF640NPbF is available in a TO-220 package.
  6. What are some typical applications for the IRF640NPbF?
    Typical applications include DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications.
  7. Is the IRF640NPbF fully avalanche rated?
    Yes, the IRF640NPbF is fully avalanche rated.
  8. What is the junction-to-ambient thermal resistance (RθJA) of the IRF640NPbF?
    The junction-to-ambient thermal resistance (RθJA) is 62°C/W (without PCB) and 40°C/W (with PCB).
  9. Does the IRF640NPbF meet industry standards for qualification?
    Yes, the IRF640NPbF is qualified according to JEDEC standards.
  10. Is the IRF640NPbF optimized for low-frequency applications?
    Yes, the IRF640NPbF is optimized for applications switching below 100kHz.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1160 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF640NPBF IRF640PBF IRF640SPBF IRF644NPBF IRF640NSPBF IRF630NPBF IRF640LPBF IRF640NLPBF
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Active Active Active Obsolete Discontinued at Digi-Key Active Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 250 V 200 V 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc) 18A (Tc) 14A (Tc) 18A (Tc) 9.3A (Tc) 18A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 11A, 10V 180mOhm @ 11A, 10V 180mOhm @ 11A, 10V 240mOhm @ 8.4A, 10V 150mOhm @ 11A, 10V 300mOhm @ 5.4A, 10V 180mOhm @ 11A, 10V 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V 70 nC @ 10 V 70 nC @ 10 V 54 nC @ 10 V 67 nC @ 10 V 35 nC @ 10 V 70 nC @ 10 V 67 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 25 V 1300 pF @ 25 V 1300 pF @ 25 V 1060 pF @ 25 V 1160 pF @ 25 V 575 pF @ 25 V 1300 pF @ 25 V 1160 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 150W (Tc) 125W (Tc) 3.1W (Ta), 130W (Tc) 150W (Tc) 150W (Tc) 82W (Tc) 3.1W (Ta), 130W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB D²PAK (TO-263) TO-220AB D2PAK TO-220AB TO-262-3 TO-262
Package / Case TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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