English
IRF640NPBF
  • Share:

Infineon Technologies IRF640NPBF

Manufacturer No:
IRF640NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 200V 18A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF640NPbF is a 200V single N-channel MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is available in a TO-220 package, an industry standard through-hole power package, making it easy to integrate into various designs. The device is optimized for applications switching below 100kHz and is known for its high-current rating and rugged design.

Key Specifications

ParameterValue
Drain-to-Source Voltage (VDSS)200V
On-Resistance (RDS(on))0.15Ω
Drain Current (ID)18A
Operating Junction Temperature-55°C to 175°C
Junction-to-Ambient Thermal Resistance (RθJA)62°C/W (without PCB), 40°C/W (with PCB)
PackageTO-220

Key Features

  • Planar cell structure for wide Safe Operating Area (SOA)
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below 100kHz
  • Industry standard through-hole power package
  • High-current rating
  • Increased ruggedness
  • Fast switching speed
  • Fully avalanche rated
  • Ease of paralleling
  • Simple drive requirements

Applications

The IRF640NPbF is suitable for a variety of applications, including DC motors, inverters, Switch-Mode Power Supplies (SMPS), lighting, load switches, and battery-powered applications.

Q & A

  1. What is the maximum drain-to-source voltage of the IRF640NPbF?
    The maximum drain-to-source voltage (VDSS) is 200V.
  2. What is the on-resistance (RDS(on)) of the IRF640NPbF?
    The on-resistance (RDS(on)) is 0.15Ω.
  3. What is the maximum drain current (ID) of the IRF640NPbF?
    The maximum drain current (ID) is 18A.
  4. What is the operating junction temperature range of the IRF640NPbF?
    The operating junction temperature range is -55°C to 175°C.
  5. What package type is the IRF640NPbF available in?
    The IRF640NPbF is available in a TO-220 package.
  6. What are some typical applications for the IRF640NPbF?
    Typical applications include DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications.
  7. Is the IRF640NPbF fully avalanche rated?
    Yes, the IRF640NPbF is fully avalanche rated.
  8. What is the junction-to-ambient thermal resistance (RθJA) of the IRF640NPbF?
    The junction-to-ambient thermal resistance (RθJA) is 62°C/W (without PCB) and 40°C/W (with PCB).
  9. Does the IRF640NPbF meet industry standards for qualification?
    Yes, the IRF640NPbF is qualified according to JEDEC standards.
  10. Is the IRF640NPbF optimized for low-frequency applications?
    Yes, the IRF640NPbF is optimized for applications switching below 100kHz.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1160 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.31
433

Please send RFQ , we will respond immediately.

Same Series
IRF640NSTRLPBF
IRF640NSTRLPBF
MOSFET N-CH 200V 18A D2PAK
IRF640NLPBF
IRF640NLPBF
MOSFET N-CH 200V 18A TO262
IRF640NSTRRPBF
IRF640NSTRRPBF
MOSFET N-CH 200V 18A D2PAK
IRF640NSPBF
IRF640NSPBF
MOSFET N-CH 200V 18A D2PAK

Similar Products

Part Number IRF640NPBF IRF640PBF IRF640SPBF IRF644NPBF IRF640NSPBF IRF630NPBF IRF640LPBF IRF640NLPBF
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Active Active Active Obsolete Discontinued at Digi-Key Active Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 250 V 200 V 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc) 18A (Tc) 14A (Tc) 18A (Tc) 9.3A (Tc) 18A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 11A, 10V 180mOhm @ 11A, 10V 180mOhm @ 11A, 10V 240mOhm @ 8.4A, 10V 150mOhm @ 11A, 10V 300mOhm @ 5.4A, 10V 180mOhm @ 11A, 10V 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V 70 nC @ 10 V 70 nC @ 10 V 54 nC @ 10 V 67 nC @ 10 V 35 nC @ 10 V 70 nC @ 10 V 67 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 25 V 1300 pF @ 25 V 1300 pF @ 25 V 1060 pF @ 25 V 1160 pF @ 25 V 575 pF @ 25 V 1300 pF @ 25 V 1160 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 150W (Tc) 125W (Tc) 3.1W (Ta), 130W (Tc) 150W (Tc) 150W (Tc) 82W (Tc) 3.1W (Ta), 130W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB D²PAK (TO-263) TO-220AB D2PAK TO-220AB TO-262-3 TO-262
Package / Case TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3

Related Product By Brand

BAS40B5003
BAS40B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC857SH6327
BC857SH6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC847SE6433BTMA1
BC847SE6433BTMA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC857CWH6327
BC857CWH6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT323-3
BCX53-16E6433
BCX53-16E6433
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC848BWH6327XTSA1
BC848BWH6327XTSA1
Infineon Technologies
TRANS NPN 30V 0.1A SOT323
BSC016N06NSATMA1
BSC016N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 30A/100A TDSON
TLE9879QXA40XUMA1
TLE9879QXA40XUMA1
Infineon Technologies
IC MOTOR DRIVER 48VQFN
TLE8104EXUMA2
TLE8104EXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
BTS711L1NT
BTS711L1NT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
TDA5210XUMA1
TDA5210XUMA1
Infineon Technologies
RF RX ASK/FSK 810-870MHZ 28TSSOP
FM24CL16B-GTR
FM24CL16B-GTR
Infineon Technologies
IC FRAM 16KBIT I2C 1MHZ 8SOIC