English
IRF640NPBF
  • Share:

Infineon Technologies IRF640NPBF

Manufacturer No:
IRF640NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 200V 18A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF640NPbF is a 200V single N-channel MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is available in a TO-220 package, an industry standard through-hole power package, making it easy to integrate into various designs. The device is optimized for applications switching below 100kHz and is known for its high-current rating and rugged design.

Key Specifications

ParameterValue
Drain-to-Source Voltage (VDSS)200V
On-Resistance (RDS(on))0.15Ω
Drain Current (ID)18A
Operating Junction Temperature-55°C to 175°C
Junction-to-Ambient Thermal Resistance (RθJA)62°C/W (without PCB), 40°C/W (with PCB)
PackageTO-220

Key Features

  • Planar cell structure for wide Safe Operating Area (SOA)
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below 100kHz
  • Industry standard through-hole power package
  • High-current rating
  • Increased ruggedness
  • Fast switching speed
  • Fully avalanche rated
  • Ease of paralleling
  • Simple drive requirements

Applications

The IRF640NPbF is suitable for a variety of applications, including DC motors, inverters, Switch-Mode Power Supplies (SMPS), lighting, load switches, and battery-powered applications.

Q & A

  1. What is the maximum drain-to-source voltage of the IRF640NPbF?
    The maximum drain-to-source voltage (VDSS) is 200V.
  2. What is the on-resistance (RDS(on)) of the IRF640NPbF?
    The on-resistance (RDS(on)) is 0.15Ω.
  3. What is the maximum drain current (ID) of the IRF640NPbF?
    The maximum drain current (ID) is 18A.
  4. What is the operating junction temperature range of the IRF640NPbF?
    The operating junction temperature range is -55°C to 175°C.
  5. What package type is the IRF640NPbF available in?
    The IRF640NPbF is available in a TO-220 package.
  6. What are some typical applications for the IRF640NPbF?
    Typical applications include DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications.
  7. Is the IRF640NPbF fully avalanche rated?
    Yes, the IRF640NPbF is fully avalanche rated.
  8. What is the junction-to-ambient thermal resistance (RθJA) of the IRF640NPbF?
    The junction-to-ambient thermal resistance (RθJA) is 62°C/W (without PCB) and 40°C/W (with PCB).
  9. Does the IRF640NPbF meet industry standards for qualification?
    Yes, the IRF640NPbF is qualified according to JEDEC standards.
  10. Is the IRF640NPbF optimized for low-frequency applications?
    Yes, the IRF640NPbF is optimized for applications switching below 100kHz.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1160 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.31
433

Please send RFQ , we will respond immediately.

Same Series
IRF640NSTRLPBF
IRF640NSTRLPBF
MOSFET N-CH 200V 18A D2PAK
IRF640NLPBF
IRF640NLPBF
MOSFET N-CH 200V 18A TO262
IRF640NSTRRPBF
IRF640NSTRRPBF
MOSFET N-CH 200V 18A D2PAK
IRF640NSPBF
IRF640NSPBF
MOSFET N-CH 200V 18A D2PAK

Similar Products

Part Number IRF640NPBF IRF640PBF IRF640SPBF IRF644NPBF IRF640NSPBF IRF630NPBF IRF640LPBF IRF640NLPBF
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Active Active Active Obsolete Discontinued at Digi-Key Active Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 250 V 200 V 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc) 18A (Tc) 14A (Tc) 18A (Tc) 9.3A (Tc) 18A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 11A, 10V 180mOhm @ 11A, 10V 180mOhm @ 11A, 10V 240mOhm @ 8.4A, 10V 150mOhm @ 11A, 10V 300mOhm @ 5.4A, 10V 180mOhm @ 11A, 10V 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V 70 nC @ 10 V 70 nC @ 10 V 54 nC @ 10 V 67 nC @ 10 V 35 nC @ 10 V 70 nC @ 10 V 67 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 25 V 1300 pF @ 25 V 1300 pF @ 25 V 1060 pF @ 25 V 1160 pF @ 25 V 575 pF @ 25 V 1300 pF @ 25 V 1160 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 150W (Tc) 125W (Tc) 3.1W (Ta), 130W (Tc) 150W (Tc) 150W (Tc) 82W (Tc) 3.1W (Ta), 130W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB D²PAK (TO-263) TO-220AB D2PAK TO-220AB TO-262-3 TO-262
Package / Case TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

BAV 70S H6327
BAV 70S H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BC847BWE6327
BC847BWE6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT323-3
BC847CWH6778
BC847CWH6778
Infineon Technologies
TRANS NPN 45V 0.1A SOT323-3
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
IRFR5305TRPBF
IRFR5305TRPBF
Infineon Technologies
MOSFET P-CH 55V 31A DPAK
IPD30N10S3L34ATMA1
IPD30N10S3L34ATMA1
Infineon Technologies
MOSFET N-CH 100V 30A TO252-3
BSC010N04LSCATMA1
BSC010N04LSCATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
BSC0702LSATMA1
BSC0702LSATMA1
Infineon Technologies
MOSFET N-CH 60V 100A SUPERSO8
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
BTN8962TAAUMA1
BTN8962TAAUMA1
Infineon Technologies
IC MOTOR DRIVER PAR TO263-7
BTS428L2ATMA1
BTS428L2ATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
TLE73682EXUMA1
TLE73682EXUMA1
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36