English
IRF640NPBF
  • Share:

Infineon Technologies IRF640NPBF

Manufacturer No:
IRF640NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 200V 18A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF640NPbF is a 200V single N-channel MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is available in a TO-220 package, an industry standard through-hole power package, making it easy to integrate into various designs. The device is optimized for applications switching below 100kHz and is known for its high-current rating and rugged design.

Key Specifications

ParameterValue
Drain-to-Source Voltage (VDSS)200V
On-Resistance (RDS(on))0.15Ω
Drain Current (ID)18A
Operating Junction Temperature-55°C to 175°C
Junction-to-Ambient Thermal Resistance (RθJA)62°C/W (without PCB), 40°C/W (with PCB)
PackageTO-220

Key Features

  • Planar cell structure for wide Safe Operating Area (SOA)
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below 100kHz
  • Industry standard through-hole power package
  • High-current rating
  • Increased ruggedness
  • Fast switching speed
  • Fully avalanche rated
  • Ease of paralleling
  • Simple drive requirements

Applications

The IRF640NPbF is suitable for a variety of applications, including DC motors, inverters, Switch-Mode Power Supplies (SMPS), lighting, load switches, and battery-powered applications.

Q & A

  1. What is the maximum drain-to-source voltage of the IRF640NPbF?
    The maximum drain-to-source voltage (VDSS) is 200V.
  2. What is the on-resistance (RDS(on)) of the IRF640NPbF?
    The on-resistance (RDS(on)) is 0.15Ω.
  3. What is the maximum drain current (ID) of the IRF640NPbF?
    The maximum drain current (ID) is 18A.
  4. What is the operating junction temperature range of the IRF640NPbF?
    The operating junction temperature range is -55°C to 175°C.
  5. What package type is the IRF640NPbF available in?
    The IRF640NPbF is available in a TO-220 package.
  6. What are some typical applications for the IRF640NPbF?
    Typical applications include DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications.
  7. Is the IRF640NPbF fully avalanche rated?
    Yes, the IRF640NPbF is fully avalanche rated.
  8. What is the junction-to-ambient thermal resistance (RθJA) of the IRF640NPbF?
    The junction-to-ambient thermal resistance (RθJA) is 62°C/W (without PCB) and 40°C/W (with PCB).
  9. Does the IRF640NPbF meet industry standards for qualification?
    Yes, the IRF640NPbF is qualified according to JEDEC standards.
  10. Is the IRF640NPbF optimized for low-frequency applications?
    Yes, the IRF640NPbF is optimized for applications switching below 100kHz.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1160 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.31
433

Please send RFQ , we will respond immediately.

Same Series
IRF640NSTRLPBF
IRF640NSTRLPBF
MOSFET N-CH 200V 18A D2PAK
IRF640NLPBF
IRF640NLPBF
MOSFET N-CH 200V 18A TO262
IRF640NSTRRPBF
IRF640NSTRRPBF
MOSFET N-CH 200V 18A D2PAK
IRF640NSPBF
IRF640NSPBF
MOSFET N-CH 200V 18A D2PAK

Similar Products

Part Number IRF640NPBF IRF640PBF IRF640SPBF IRF644NPBF IRF640NSPBF IRF630NPBF IRF640LPBF IRF640NLPBF
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Active Active Active Obsolete Discontinued at Digi-Key Active Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 250 V 200 V 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc) 18A (Tc) 14A (Tc) 18A (Tc) 9.3A (Tc) 18A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 11A, 10V 180mOhm @ 11A, 10V 180mOhm @ 11A, 10V 240mOhm @ 8.4A, 10V 150mOhm @ 11A, 10V 300mOhm @ 5.4A, 10V 180mOhm @ 11A, 10V 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V 70 nC @ 10 V 70 nC @ 10 V 54 nC @ 10 V 67 nC @ 10 V 35 nC @ 10 V 70 nC @ 10 V 67 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 25 V 1300 pF @ 25 V 1300 pF @ 25 V 1060 pF @ 25 V 1160 pF @ 25 V 575 pF @ 25 V 1300 pF @ 25 V 1160 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 150W (Tc) 125W (Tc) 3.1W (Ta), 130W (Tc) 150W (Tc) 150W (Tc) 82W (Tc) 3.1W (Ta), 130W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB D²PAK (TO-263) TO-220AB D2PAK TO-220AB TO-262-3 TO-262
Package / Case TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB

Related Product By Brand

BAS21UE6327HTSA1
BAS21UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 200V 250MA SC74-6
BAS21UE6359HTMA1
BAS21UE6359HTMA1
Infineon Technologies
DIODE GP 200V 125MA SC74
BAT54B5003
BAT54B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS4002S02LRHE6327XTSA1
BAS4002S02LRHE6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 40V 200MA TSLP-2
BC847CWH6778
BC847CWH6778
Infineon Technologies
TRANS NPN 45V 0.1A SOT323-3
BC847BWH6433XTMA1
BC847BWH6433XTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
MMBTA56LT1HTSA1
MMBTA56LT1HTSA1
Infineon Technologies
TRANS PNP 80V 0.5A SOT23
BC 846B E6433
BC 846B E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
IRFB4227PBF
IRFB4227PBF
Infineon Technologies
MOSFET N-CH 200V 65A TO220AB
BSC0702LSATMA1
BSC0702LSATMA1
Infineon Technologies
MOSFET N-CH 60V 100A SUPERSO8
BTS500851TMAATMA1
BTS500851TMAATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO220-7
BSP452 E6327
BSP452 E6327
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4