Overview
The NTH4LN019N65S3H is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family. This device is designed using super-junction (SJ) technology and charge balance technology, which provides outstanding performance in terms of low on-resistance and high efficiency. It is particularly suited for applications requiring high voltage and low losses.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage Rating (Vds) | 700 V @ TJ = 150°C |
| On-Resistance (Rds(on)) | Typically 19 mΩ |
| Gate Threshold Voltage (Vgs(th)) | Typically 3.5 V |
| Maximum Gate-Source Voltage (Vgs) | ±20 V |
| Maximum Drain Current (Id) | Typically 190 A |
| Package Type | TO-247 |
Key Features
- High voltage rating of 700 V @ TJ = 150°C
- Low effective on-resistance (Rds(on)) of typically 19 mΩ
- Utilizes super-junction (SJ) technology and charge balance technology for high efficiency
- Fast switching times
- High current capability of up to 190 A
Applications
- Telecommunication systems
- Cloud computing and server power supplies
- Industrial applications
- Electric Vehicle (EV) chargers
Q & A
- What is the voltage rating of the NTH4LN019N65S3H MOSFET? The voltage rating is 700 V @ TJ = 150°C.
- What is the typical on-resistance of the NTH4LN019N65S3H? The typical on-resistance is 19 mΩ.
- What technology is used in the NTH4LN019N65S3H? It uses super-junction (SJ) technology and charge balance technology.
- What are the typical applications for this MOSFET? Typical applications include telecommunication systems, cloud computing and server power supplies, industrial applications, and EV chargers.
- What is the maximum gate-source voltage for the NTH4LN019N65S3H? The maximum gate-source voltage is ±20 V.
- What is the package type of the NTH4LN019N65S3H? The package type is TO-247.
- What is the maximum drain current for the NTH4LN019N65S3H? The maximum drain current is typically 190 A.
- Why is the NTH4LN019N65S3H considered efficient? It is considered efficient due to its low on-resistance and high efficiency provided by the super-junction technology and charge balance technology.
- Where can I find detailed specifications for the NTH4LN019N65S3H? Detailed specifications can be found in the datasheet available on onsemi's official website or other reputable electronics component websites.
- What are the benefits of using the NTH4LN019N65S3H in high-voltage applications? The benefits include low losses, high efficiency, and fast switching times, making it suitable for high-voltage applications.
