BUK7613-60E,118
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Nexperia USA Inc. BUK7613-60E,118

Manufacturer No:
BUK7613-60E,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 58A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK7613-60E,118 is a high-performance N-Channel TrenchMOS power MOSFET manufactured by Nexperia USA Inc. This device is designed to meet the stringent requirements of various industrial and automotive applications, offering a balance of high current handling, low on-state resistance, and robust avalanche ratings.

Key Specifications

ParameterValue
Type of transistorN-MOSFET
PolarisationUnipolar
Drain-source voltage (Vds)60V
Drain current (Id)41A
Pulsed drain current (Idm)234A
Power dissipation (Pd)96W
CaseD2PAK, SOT404
Gate-source voltage (Vgs)±20V
On-state resistance (Rds(on))28.2mΩ
MountingSMD
Gate charge (Qg)22.9nC
Kind of packageReel, tape
Kind of channelEnhanced

Key Features

  • Avalanche-rated: The BUK7613-60E,118 is designed to withstand high energy pulses, making it suitable for applications where robustness is critical.
  • Low on-state resistance: With an Rds(on) of 28.2mΩ, this MOSFET minimizes power losses and enhances overall system efficiency.
  • High current handling: Capable of handling continuous drain currents up to 41A and pulsed currents up to 234A, this device is ideal for high-power applications.
  • Compact packaging: Available in D2PAK and SOT404 packages, this MOSFET is designed to save PCB space while maintaining high performance.
  • Surface-mount technology (SMD): Facilitates easy integration into modern PCB designs.

Applications

The BUK7613-60E,118 is particularly suited for various applications in the automotive and industrial sectors, including:

  • Automotive systems: Electric vehicles, hybrid vehicles, and other automotive electronics where high reliability and efficiency are essential.
  • Industrial power systems: Motor drives, power supplies, and other industrial equipment requiring high current handling and low on-state resistance.
  • Renewable energy systems: Inverters and other power conversion systems in solar and wind energy applications.

Q & A

  1. What is the maximum drain-source voltage of the BUK7613-60E,118?
    The maximum drain-source voltage (Vds) is 60V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (Id) is 41A.
  3. What is the pulsed drain current rating of this MOSFET?
    The pulsed drain current (Idm) is 234A.
  4. What is the on-state resistance (Rds(on)) of the BUK7613-60E,118?
    The on-state resistance (Rds(on)) is 28.2mΩ.
  5. In what packages is the BUK7613-60E,118 available?
    The BUK7613-60E,118 is available in D2PAK and SOT404 packages.
  6. Is the BUK7613-60E,118 suitable for automotive applications?
    Yes, it is designed for and qualified for use in automotive systems.
  7. What is the gate-source voltage (Vgs) rating of this MOSFET?
    The gate-source voltage (Vgs) rating is ±20V.
  8. What is the power dissipation (Pd) of the BUK7613-60E,118?
    The power dissipation (Pd) is 96W.
  9. Is the BUK7613-60E,118 RoHS compliant?
    Yes, the BUK7613-60E,118 is RoHS compliant.
  10. What type of mounting does the BUK7613-60E,118 use?
    The BUK7613-60E,118 uses surface-mount technology (SMD).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:22.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1730 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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