Overview
The IRF630NPBF is a 200V single N-channel power MOSFET produced by Infineon Technologies. It belongs to the Fifth Generation HEXFET® family, which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This MOSFET is available in the industry-standard TO-220 package, making it widely accepted for various commercial and industrial applications. The device is known for its high-current rating, fast switching speed, and ruggedized design, making it an efficient and reliable choice for designers.
Key Specifications
| Parameter | Max. Units | Value |
|---|---|---|
| Continuous Drain Current, VGS @ 10V at TC = 25°C | A | 9.3 |
| Continuous Drain Current, VGS @ 10V at TC = 100°C | A | 6.5 |
| Pulsed Drain Current | A | 37 |
| Power Dissipation at TC = 25°C | W | 82 |
| Linear Derating Factor | W/°C | 0.5 |
| Gate-to-Source Voltage | V | ±20 |
| Single Pulse Avalanche Energy | mJ | 94 |
| Avalanche Current | A | 9.3 |
| Repetitive Avalanche Energy | mJ | 8.2 |
| Peak Diode Recovery dv/dt | V/ns | 8.1 |
| Operating Junction Temperature | °C | -55 to +175 |
| Storage Temperature Range | °C | -55 to +150 |
| Soldering Temperature, for 10 seconds | °C | 300 (1.6mm from case) |
| Mounting torque, 6-32 or M3 screw | lbf•in (N•m) | 10 (1.1) |
| Drain-to-Source On Resistance (RDS(on)) | Ω | 0.30 |
Key Features
- Planar cell structure for wide SOA (Safe Operating Area): Enhances the device's ruggedness and reliability.
- Advanced Process Technology: Achieves extremely low on-resistance per silicon area.
- Dynamic dv/dt Rating: Ensures robust performance under high-frequency switching conditions.
- 175°C Operating Temperature: Suitable for high-temperature applications.
- Fast Switching Speed: Ideal for applications requiring quick switching times.
- Fully Avalanche Rated: Provides protection against voltage spikes and ensures device longevity.
- Ease of Paralleling: Simplifies the process of connecting multiple devices in parallel for higher current handling.
- Simple Drive Requirements: Reduces the complexity of the gate drive circuitry.
- Industry Standard Through-Hole Power Package (TO-220): Facilitates easy integration and drop-in replacement in existing designs.
Applications
- DC Motors: Suitable for motor control and drive applications.
- Inverters: Used in power conversion systems such as solar inverters and UPS systems.
- Switch-Mode Power Supplies (SMPS): Ideal for high-efficiency power supply designs.
- Lighting Systems: Applicable in lighting control and dimming systems.
- Load Switches: Used in applications requiring high-current switching.
- Battery Powered Applications: Suitable for battery management and charging systems.
Q & A
- What is the maximum continuous drain current of the IRF630NPBF at 25°C?
The maximum continuous drain current at 25°C is 9.3A. - What is the maximum power dissipation of the IRF630NPBF at 25°C?
The maximum power dissipation at 25°C is 82W. - What is the gate-to-source voltage rating of the IRF630NPBF?
The gate-to-source voltage rating is ±20V. - What is the operating junction temperature range of the IRF630NPBF?
The operating junction temperature range is -55°C to +175°C. - What package types are available for the IRF630NPBF?
The IRF630NPBF is available in TO-220, TO-262, and D2Pak packages. - What are the key features of the IRF630NPBF?
Key features include advanced process technology, dynamic dv/dt rating, 175°C operating temperature, fast switching speed, and full avalanche rating. - What applications is the IRF630NPBF suitable for?
The IRF630NPBF is suitable for DC motors, inverters, SMPS, lighting systems, load switches, and battery-powered applications. - What is the on-resistance (RDS(on)) of the IRF630NPBF?
The on-resistance (RDS(on)) is 0.30Ω. - Is the IRF630NPBF fully avalanche rated?
Yes, the IRF630NPBF is fully avalanche rated. - What is the single pulse avalanche energy rating of the IRF630NPBF?
The single pulse avalanche energy rating is 94mJ.
