BC817-40E6433
  • Share:

Infineon Technologies BC817-40E6433

Manufacturer No:
BC817-40E6433
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-40E6433 is an NPN silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This transistor is part of the BC817 series, known for its high performance and reliability in various electronic applications.

It is housed in a SOT23 package, which is Pb-free and RoHS compliant, making it suitable for modern electronic designs that require environmental compliance.

Key Specifications

Parameter Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage VCBO - - 50 V IC = 100µA
Collector-Emitter Breakdown Voltage VCEO - - 45 V IC = 10mA
Emitter-Base Breakdown Voltage VEBO - - 5.0 V IE = 100µA
Collector Current IC - - 500 mA -
DC Current Gain hFE 250 - 600 - VCE = 1.0V, IC = 100mA
Collector-Emitter Saturation Voltage VCE(SAT) - - 0.7 V IC = 500mA, IB = 50mA
Power Dissipation PD - - 300 mW -
Junction Temperature TJ -55 - 150 °C -
Storage Temperature TSTG -55 - 150 °C -

Key Features

  • High collector current up to 500 mA
  • High current gain (hFE) ranging from 250 to 600
  • Low collector-emitter saturation voltage (VCE(SAT)) of 0.7 V
  • Pb-free and RoHS compliant package
  • Qualified according to AEC Q101 standards for high reliability
  • Halogen and antimony free, making it a 'green' device
  • Epitaxial planar die construction
  • Complementary PNP types available (BC807)

Applications

The BC817-40E6433 is suitable for a variety of applications, including:

  • General AF (Audio Frequency) applications
  • Switching and AF amplifier applications
  • Automotive and industrial electronics where high reliability is required

Q & A

  1. What is the maximum collector current of the BC817-40E6433?

    The maximum collector current is 500 mA.

  2. What is the typical DC current gain (hFE) of the BC817-40E6433?

    The typical DC current gain (hFE) is between 250 and 600.

  3. What is the collector-emitter saturation voltage (VCE(SAT)) of the BC817-40E6433?

    The collector-emitter saturation voltage (VCE(SAT)) is 0.7 V.

  4. Is the BC817-40E6433 RoHS compliant?
  5. What are the operating and storage temperature ranges for the BC817-40E6433?

    The operating and storage temperature ranges are -55°C to +150°C.

  6. What is the power dissipation of the BC817-40E6433?

    The power dissipation is 300 mW.

  7. Is the BC817-40E6433 qualified for automotive applications?
  8. What package type is used for the BC817-40E6433?

    The BC817-40E6433 is housed in a SOT23 package.

  9. Are there any complementary PNP types available for the BC817-40E6433?
  10. What are some typical applications for the BC817-40E6433?

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
146

Please send RFQ , we will respond immediately.

Same Series
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BC817-16LT1G
BC817-16LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
BD13610STU
BD13610STU
onsemi
TRANS PNP 45V 1.5A TO126-3
PBSS5350D,135
PBSS5350D,135
Nexperia USA Inc.
TRANS PNP 50V 3A 6TSOP
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
SMMBTA56LT1G
SMMBTA56LT1G
onsemi
TRANS PNP 80V 0.5A SOT23-3
MPSA29-D26Z
MPSA29-D26Z
onsemi
TRANS NPN DARL 100V 0.8A TO92-3
BD140G
BD140G
onsemi
TRANS PNP 80V 1.5A TO126
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC846AQB-QZ
BC846AQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
2N2907AP
2N2907AP
Microchip Technology
SMALL-SIGNAL BJT
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA

Related Product By Brand

BAS40-06WE6327
BAS40-06WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS28E6433HTMA1
BAS28E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BC 860B E6327
BC 860B E6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC848BW
BC848BW
Infineon Technologies
TRANS NPN 30V 0.1A SOT323
BC847CB5000
BC847CB5000
Infineon Technologies
BIPOLAR TRANSISTOR TRANSISTOR
BCP5316H6327XTSA1
BCP5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
BCX5616E6433HTMA1
BCX5616E6433HTMA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC817K25WE6327HTSA1
BC817K25WE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
IPD30N10S3L34ATMA1
IPD30N10S3L34ATMA1
Infineon Technologies
MOSFET N-CH 100V 30A TO252-3
IRFP4468PBFXKMA1
IRFP4468PBFXKMA1
Infineon Technologies
TRENCH >=100V PG-TO247-3
TLE4267GMXUMA1
TLE4267GMXUMA1
Infineon Technologies
IC REG LINEAR 5V 400MA DSO14-30