BC817-40E6433
  • Share:

Infineon Technologies BC817-40E6433

Manufacturer No:
BC817-40E6433
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-40E6433 is an NPN silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This transistor is part of the BC817 series, known for its high performance and reliability in various electronic applications.

It is housed in a SOT23 package, which is Pb-free and RoHS compliant, making it suitable for modern electronic designs that require environmental compliance.

Key Specifications

Parameter Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage VCBO - - 50 V IC = 100µA
Collector-Emitter Breakdown Voltage VCEO - - 45 V IC = 10mA
Emitter-Base Breakdown Voltage VEBO - - 5.0 V IE = 100µA
Collector Current IC - - 500 mA -
DC Current Gain hFE 250 - 600 - VCE = 1.0V, IC = 100mA
Collector-Emitter Saturation Voltage VCE(SAT) - - 0.7 V IC = 500mA, IB = 50mA
Power Dissipation PD - - 300 mW -
Junction Temperature TJ -55 - 150 °C -
Storage Temperature TSTG -55 - 150 °C -

Key Features

  • High collector current up to 500 mA
  • High current gain (hFE) ranging from 250 to 600
  • Low collector-emitter saturation voltage (VCE(SAT)) of 0.7 V
  • Pb-free and RoHS compliant package
  • Qualified according to AEC Q101 standards for high reliability
  • Halogen and antimony free, making it a 'green' device
  • Epitaxial planar die construction
  • Complementary PNP types available (BC807)

Applications

The BC817-40E6433 is suitable for a variety of applications, including:

  • General AF (Audio Frequency) applications
  • Switching and AF amplifier applications
  • Automotive and industrial electronics where high reliability is required

Q & A

  1. What is the maximum collector current of the BC817-40E6433?

    The maximum collector current is 500 mA.

  2. What is the typical DC current gain (hFE) of the BC817-40E6433?

    The typical DC current gain (hFE) is between 250 and 600.

  3. What is the collector-emitter saturation voltage (VCE(SAT)) of the BC817-40E6433?

    The collector-emitter saturation voltage (VCE(SAT)) is 0.7 V.

  4. Is the BC817-40E6433 RoHS compliant?
  5. What are the operating and storage temperature ranges for the BC817-40E6433?

    The operating and storage temperature ranges are -55°C to +150°C.

  6. What is the power dissipation of the BC817-40E6433?

    The power dissipation is 300 mW.

  7. Is the BC817-40E6433 qualified for automotive applications?
  8. What package type is used for the BC817-40E6433?

    The BC817-40E6433 is housed in a SOT23 package.

  9. Are there any complementary PNP types available for the BC817-40E6433?
  10. What are some typical applications for the BC817-40E6433?

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
146

Please send RFQ , we will respond immediately.

Same Series
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BCX56-10TX
BCX56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BCX54-16,135
BCX54-16,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
TIP121TU
TIP121TU
onsemi
TRANS NPN DARL 80V 5A TO220-3
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
BDX34C
BDX34C
STMicroelectronics
TRANS PNP DARL 100V 10A TO220
BC857B,235
BC857B,235
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC857CW-G
BC857CW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
STF826
STF826
STMicroelectronics
TRANS PNP 30V 3A SOT89-3
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3

Related Product By Brand

BAV199E6327HTSA1
BAV199E6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAV 70S H6327
BAV 70S H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS 16U E6327
BAS 16U E6327
Infineon Technologies
RECTIFIER DIODE
BAS70-06E6433
BAS70-06E6433
Infineon Technologies
SCHOTTKY DIODE - HIGH SPEED SWIT
BAV99E6327
BAV99E6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BC846SE6327BTSA1
BC846SE6327BTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC848B-E6327
BC848B-E6327
Infineon Technologies
TRANS NPN 30V 0.1A SOT23
BC 846A E6433
BC 846A E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
BC 846B B5003
BC 846B B5003
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR
SAK-TC1796-256F150EBE
SAK-TC1796-256F150EBE
Infineon Technologies
IC MCU 32BIT 2MB FLASH 416PBGA
BSP78E6327
BSP78E6327
Infineon Technologies
POWER SWITCH SMART LOW