BC817-40E6433
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Infineon Technologies BC817-40E6433

Manufacturer No:
BC817-40E6433
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-40E6433 is an NPN silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This transistor is part of the BC817 series, known for its high performance and reliability in various electronic applications.

It is housed in a SOT23 package, which is Pb-free and RoHS compliant, making it suitable for modern electronic designs that require environmental compliance.

Key Specifications

Parameter Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage VCBO - - 50 V IC = 100µA
Collector-Emitter Breakdown Voltage VCEO - - 45 V IC = 10mA
Emitter-Base Breakdown Voltage VEBO - - 5.0 V IE = 100µA
Collector Current IC - - 500 mA -
DC Current Gain hFE 250 - 600 - VCE = 1.0V, IC = 100mA
Collector-Emitter Saturation Voltage VCE(SAT) - - 0.7 V IC = 500mA, IB = 50mA
Power Dissipation PD - - 300 mW -
Junction Temperature TJ -55 - 150 °C -
Storage Temperature TSTG -55 - 150 °C -

Key Features

  • High collector current up to 500 mA
  • High current gain (hFE) ranging from 250 to 600
  • Low collector-emitter saturation voltage (VCE(SAT)) of 0.7 V
  • Pb-free and RoHS compliant package
  • Qualified according to AEC Q101 standards for high reliability
  • Halogen and antimony free, making it a 'green' device
  • Epitaxial planar die construction
  • Complementary PNP types available (BC807)

Applications

The BC817-40E6433 is suitable for a variety of applications, including:

  • General AF (Audio Frequency) applications
  • Switching and AF amplifier applications
  • Automotive and industrial electronics where high reliability is required

Q & A

  1. What is the maximum collector current of the BC817-40E6433?

    The maximum collector current is 500 mA.

  2. What is the typical DC current gain (hFE) of the BC817-40E6433?

    The typical DC current gain (hFE) is between 250 and 600.

  3. What is the collector-emitter saturation voltage (VCE(SAT)) of the BC817-40E6433?

    The collector-emitter saturation voltage (VCE(SAT)) is 0.7 V.

  4. Is the BC817-40E6433 RoHS compliant?
  5. What are the operating and storage temperature ranges for the BC817-40E6433?

    The operating and storage temperature ranges are -55°C to +150°C.

  6. What is the power dissipation of the BC817-40E6433?

    The power dissipation is 300 mW.

  7. Is the BC817-40E6433 qualified for automotive applications?
  8. What package type is used for the BC817-40E6433?

    The BC817-40E6433 is housed in a SOT23 package.

  9. Are there any complementary PNP types available for the BC817-40E6433?
  10. What are some typical applications for the BC817-40E6433?

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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