BC817K-16WH6327
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Infineon Technologies BC817K-16WH6327

Manufacturer No:
BC817K-16WH6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817K-16WH6327, produced by Infineon Technologies, is an NPN silicon general-purpose transistor. This component is designed for a wide range of applications, particularly in general AF (audio frequency) and switching circuits. It is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for compact and efficient designs.

Key Specifications

ParameterValue
TypeNPN General-Purpose Transistor
PackageSOT23 (TO-236AB)
Collector-Emitter Voltage (VCEO)45 V
Collector Current (IC)500 mA
Current Gain (hFE)100 - 250
Collector-Emitter Saturation Voltage (VCE(sat))700 mV @ IB = 50 mA, IC = 500 mA
Power Dissipation (Ptot)775 mW
Junction Temperature (TJ)150°C
RoHS CompliancePb-free (RoHS compliant)
AEC-Q101 QualificationQualified

Key Features

  • High collector current of up to 500 mA
  • High current gain (hFE) ranging from 100 to 250
  • Low collector-emitter saturation voltage (VCE(sat)) of 700 mV
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC-Q101 standards for automotive applications
  • High power dissipation capability

Applications

The BC817K-16WH6327 is suitable for various applications, including:

  • General AF (audio frequency) applications
  • General-purpose switching and amplification circuits
  • Automotive applications due to its AEC-Q101 qualification
  • Industrial and consumer electronics where high reliability and efficiency are required

Q & A

  1. What is the BC817K-16WH6327 transistor type?
    The BC817K-16WH6327 is an NPN silicon general-purpose transistor.
  2. What is the maximum collector current of the BC817K-16WH6327?
    The maximum collector current is 500 mA.
  3. What is the collector-emitter voltage (VCEO) of the BC817K-16WH6327?
    The collector-emitter voltage (VCEO) is 45 V.
  4. What is the current gain (hFE) range of the BC817K-16WH6327?
    The current gain (hFE) ranges from 100 to 250.
  5. Is the BC817K-16WH6327 RoHS compliant?
    Yes, the BC817K-16WH6327 is Pb-free and RoHS compliant.
  6. What is the junction temperature (TJ) of the BC817K-16WH6327?
    The junction temperature (TJ) is 150°C.
  7. Is the BC817K-16WH6327 qualified for automotive applications?
    Yes, it is qualified according to AEC-Q101 standards.
  8. What package type does the BC817K-16WH6327 use?
    The BC817K-16WH6327 is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
  9. What are some common applications of the BC817K-16WH6327?
    Common applications include general AF applications, general-purpose switching and amplification circuits, and automotive applications.
  10. What is the power dissipation capability of the BC817K-16WH6327?
    The power dissipation capability is up to 775 mW.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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