BAS2103WE6327HTSA1
  • Share:

Infineon Technologies BAS2103WE6327HTSA1

Manufacturer No:
BAS2103WE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 250MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS2103WE6327HTSA1 is a high-speed switching diode manufactured by Infineon Technologies. This component is designed for high-speed switching applications and is part of the BAS21 series. It is packaged in a PG-SOD323-2 surface mount configuration, making it suitable for a variety of electronic circuits that require fast and reliable switching capabilities. The diode is lead-free and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Parameter Symbol Value Unit
Diode Reverse Voltage VR 200 V
Peak Reverse Voltage VRM 250 V
Forward Current IF 250 mA
Peak Forward Current IFM 625 mA
Surge Forward Current IFS 4 A (t = 10 µs)
Reverse Leakage Current IR 100 nA @ 200 V
Forward Voltage VF 1.25 V @ 200 mA
Reverse Recovery Time trr 50 ns
Junction Temperature Tj 150°C (max)
Package/Case PG-SOD323-2
Moisture Sensitivity Level (MSL) 1 (unlimited)

Key Features

The BAS2103WE6327HTSA1 features several key attributes that make it suitable for high-speed switching applications:

  • High-Speed Switching Capability: The diode has a fast recovery time of 50 ns, making it ideal for high-speed switching circuits.
  • High Breakdown Voltage: With a maximum diode reverse voltage of 200 V, it provides robust protection against voltage spikes.
  • Lead-Free and RoHS Compliant: The diode is packaged in a lead-free, RoHS compliant PG-SOD323-2 configuration, ensuring environmental sustainability and regulatory compliance.
  • Low Forward Voltage Drop: The diode has a forward voltage drop of 1.25 V at 200 mA, which is efficient for many applications.
  • High Surge Current Capability: It can handle surge forward currents up to 4 A for 10 µs, providing reliability in transient conditions.

Applications

The BAS2103WE6327HTSA1 is versatile and can be used in a variety of applications, including:

  • High-Speed Switching Circuits: Ideal for applications requiring fast switching times, such as in digital circuits, power supplies, and communication systems.
  • Power Supplies: Suitable for use in power supply circuits where high-speed diodes are necessary for efficient operation.
  • Automotive Electronics: Qualified according to AEC Q101, making it suitable for automotive applications where reliability and robustness are critical.
  • Consumer Electronics: Can be used in various consumer electronic devices that require high-speed switching diodes, such as in audio equipment, medical devices, and more.

Q & A

  1. What is the maximum diode reverse voltage of the BAS2103WE6327HTSA1?

    The maximum diode reverse voltage is 200 V.

  2. What is the forward current rating of the BAS2103WE6327HTSA1?

    The forward current rating is 250 mA.

  3. What is the reverse recovery time of the BAS2103WE6327HTSA1?

    The reverse recovery time is 50 ns.

  4. Is the BAS2103WE6327HTSA1 RoHS compliant?

    Yes, the diode is lead-free and RoHS compliant.

  5. What is the junction temperature rating of the BAS2103WE6327HTSA1?

    The junction temperature rating is 150°C (max).

  6. What is the package type of the BAS2103WE6327HTSA1?

    The package type is PG-SOD323-2).

  7. What are some typical applications of the BAS2103WE6327HTSA1?

    Typical applications include high-speed switching circuits, power supplies, automotive electronics, and consumer electronics).

  8. What is the surge forward current capability of the BAS2103WE6327HTSA1?

    The diode can handle surge forward currents up to 4 A for 10 µs).

  9. Is the BAS2103WE6327HTSA1 qualified according to any automotive standards?

    Yes, it is qualified according to AEC Q101).

  10. What is the moisture sensitivity level (MSL) of the BAS2103WE6327HTSA1?

    The MSL is 1 (unlimited)).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:PG-SOD323-2
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.41
2,214

Please send RFQ , we will respond immediately.

Same Series
BAS21UE6327HTSA1
BAS21UE6327HTSA1
DIODE ARRAY GP 200V 250MA SC74-6
BAS21UE6433HTMA1
BAS21UE6433HTMA1
DIODE ARRAY GP 200V 250MA SC74-6
BAS21UE6359HTMA1
BAS21UE6359HTMA1
DIODE GP 200V 125MA SC74
BAS2103WE6327HTSA1
BAS2103WE6327HTSA1
DIODE GEN PURP 200V 250MA SOD323
BAS21E6433HTMA1
BAS21E6433HTMA1
DIODE GEN PURP 200V 250MA SOT23
BAS2103WE6433HTMA1
BAS2103WE6433HTMA1
DIODE GEN PURP 200V 250MA SOD323
BAS21E6359HTMA1
BAS21E6359HTMA1
DIODE GP 200V 250MA SOT23-3

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

BC847SH6433XTMA1
BC847SH6433XTMA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC847CWH6327XTSA1
BC847CWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC848BWH6327XTSA1
BC848BWH6327XTSA1
Infineon Technologies
TRANS NPN 30V 0.1A SOT323
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BCX5316H6433XTMA1
BCX5316H6433XTMA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC 847CW B6327
BC 847CW B6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCP 54-16 H6778
BCP 54-16 H6778
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
BSP742RIXUMA1
BSP742RIXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 PDSO-8
BTS6163DAUMA1
BTS6163DAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA