BAT42W-E3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAT42W-E3-18

Manufacturer No:
BAT42W-E3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT42W-E3-18 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is known for its low turn-on voltage and fast switching capabilities, making it suitable for a variety of applications requiring high efficiency and low power loss. The BAT42W-E3-18 is part of the BAT42W series, which includes several variants with different packaging and qualification levels.

Key Specifications

Parameter Test Condition Symbol Value Unit
Repetitive peak reverse voltage Tamb = 25 °C VRRM 30 V
Forward continuous current Tamb = 25 °C IF 200 mA
Repetitive peak forward current tp < 1 s, δ < 0.5 IFRM 500 mA
Surge forward current tp < 10 ms IFSM 4 A
Power dissipation Tamb = 65 °C Ptot 200 mW
Thermal resistance junction to ambient air Tamb = 25 °C RthJA 300 K/W
Junction temperature Tj 125 °C
Operating temperature range Top -55 to +125 °C
Storage temperature range Tstg -55 to +150 °C
Forward voltage IF = 200 mA VF 1000 mV
Reverse recovery time IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 Ω trr 5 ns
Diode capacitance VR = 1 V, f = 1 MHz CD 7 pF
Leakage current VR = 25 V IR 0.5 μA

Key Features

  • Low Turn-On Voltage: The BAT42W-E3-18 features very low forward voltage drop, typically 400 mV at 10 mA and 650 mV at 50 mA, making it efficient for low-voltage applications.
  • Fast Switching: With a reverse recovery time of 5 ns, this diode is suitable for high-frequency applications.
  • High Surge Current Capability: It can handle surge forward currents up to 4 A for short durations, enhancing its reliability in transient conditions.
  • RoHS Compliant and AEC-Q101 Qualified: The BAT42W-E3-18 is RoHS compliant and AEC-Q101 qualified, making it suitable for automotive and other demanding environments.
  • Wide Operating Temperature Range: The diode operates over a temperature range of -55 °C to +125 °C, ensuring stability in various environmental conditions.
  • Moisture Sensitivity Level (MSL) 1: This indicates that the device is highly resistant to moisture, reducing the risk of damage during handling and assembly.

Applications

  • Automotive Systems: Given its AEC-Q101 qualification, the BAT42W-E3-18 is suitable for use in automotive electronics, such as in power management and signal processing circuits.
  • Consumer Electronics: It is used in various consumer electronic devices where low power loss and high efficiency are required, such as in power supplies, voltage regulators, and switching circuits.
  • Industrial Control Systems: The diode's robustness and wide operating temperature range make it a good choice for industrial control systems, including motor control and power management applications.
  • Communication Equipment: Its fast switching and low forward voltage drop make it suitable for use in communication equipment, such as in RF circuits and signal processing.

Q & A

  1. What is the repetitive peak reverse voltage of the BAT42W-E3-18?

    The repetitive peak reverse voltage (VRRM) is 30 V.

  2. What is the forward continuous current rating of the BAT42W-E3-18?

    The forward continuous current (IF) is 200 mA.

  3. What is the surge forward current capability of the BAT42W-E3-18?

    The surge forward current (IFSM) is up to 4 A for short durations (tp < 10 ms).

  4. What is the thermal resistance junction to ambient air for the BAT42W-E3-18?

    The thermal resistance junction to ambient air (RthJA) is 300 K/W.

  5. What is the operating temperature range of the BAT42W-E3-18?

    The operating temperature range is -55 °C to +125 °C.

  6. Is the BAT42W-E3-18 RoHS compliant and AEC-Q101 qualified?

    Yes, it is both RoHS compliant and AEC-Q101 qualified.

  7. What is the forward voltage drop at 200 mA for the BAT42W-E3-18?

    The forward voltage drop (VF) at 200 mA is typically 1000 mV.

  8. What is the reverse recovery time of the BAT42W-E3-18?

    The reverse recovery time (trr) is 5 ns.

  9. What is the diode capacitance of the BAT42W-E3-18?

    The diode capacitance (CD) is 7 pF at VR = 1 V and f = 1 MHz.

  10. What is the leakage current of the BAT42W-E3-18 at 25 V?

    The leakage current (IR) at VR = 25 V is 0.5 μA.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:650 mV @ 50 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:500 nA @ 25 V
Capacitance @ Vr, F:7pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.40
2,233

Please send RFQ , we will respond immediately.

Same Series
BAT42W-E3-08
BAT42W-E3-08
DIODE SCHOTTKY 30V 200MA SOD123
BAT43W-E3-08
BAT43W-E3-08
DIODE SCHOTTKY 30V 200MA SOD123
BAT43W-HE3-08
BAT43W-HE3-08
DIODE SCHOTTKY 30V 200MA SOD123
BAT43W-E3-18
BAT43W-E3-18
DIODE SCHOTTKY 30V 200MA SOD123
BAT42W-E3-18
BAT42W-E3-18
DIODE SCHOTTKY 30V 200MA SOD123
BAT42W-HE3-18
BAT42W-HE3-18
DIODE SCHOTTKY 30V 200MA SOD123
BAT43W-HE3-18
BAT43W-HE3-18
DIODE SCHOTTKY 30V 200MA SOD123

Similar Products

Part Number BAT42W-E3-18 BAT46W-E3-18 BAT42WS-E3-18 BAT43W-E3-18 BAT42W-G3-18 BAT42W-HE3-18 BAT42W-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 100 V 30 V 30 V 30 V 30 V 30 V
Current - Average Rectified (Io) 200mA (DC) 150mA (DC) 200mA (DC) 200mA (DC) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 650 mV @ 50 mA 1 V @ 250 mA 650 mV @ 50 mA 450 mV @ 15 mA 650 mV @ 50 mA 650 mV @ 50 mA 650 mV @ 50 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns - 5 ns 5 ns 5 ns 5 ns 5 ns
Current - Reverse Leakage @ Vr 500 nA @ 25 V 5 µA @ 75 V 500 nA @ 25 V 500 nA @ 25 V 500 nA @ 25 V 500 nA @ 25 V 500 nA @ 25 V
Capacitance @ Vr, F 7pF @ 1V, 1MHz 6pF @ 1V, 1MHz 7pF @ 1V, 1MHz 7pF @ 1V, 1MHz 7pF @ 1V, 1MHz 7pF @ 1V, 1MHz 7pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 SOD-123 SC-76, SOD-323 SOD-123 SOD-123 SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-123 SOD-323 SOD-123 SOD-123 SOD-123 SOD-123
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SMA6J5.0A-E3/61
SMA6J5.0A-E3/61
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 13.4VC DO214AC
SM6T18CA-M3/5B
SM6T18CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T30CA-M3/52
SM6T30CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM6T6V8AHE3/52
SM6T6V8AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM15T6V8CAHE3_A/H
SM15T6V8CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
SM6T10CAHM3/H
SM6T10CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T12AHM3/H
SM6T12AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
BAS70-05-G3-18
BAS70-05-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BZX84C4V3-E3-08
BZX84C4V3-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3
BZX84C68-HE3-08
BZX84C68-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 68V 300MW SOT23-3
BZX384C13-HE3-18
BZX384C13-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 200MW SOD323
BZX384B16-G3-18
BZX384B16-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 200MW SOD323