1N4004GPE-M3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPE-M3/54

Manufacturer No:
1N4004GPE-M3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURPOSE DO-204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPE-M3/54 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N4001 through 1N4007 series, which are widely used in various applications requiring rectification of power supplies, inverters, converters, and freewheeling diodes. The 1N4004GPE-M3/54 is known for its reliability and performance in handling medium to high voltage and current requirements.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 400 V
Maximum RMS Voltage (VRMS) 280 V
Maximum DC Blocking Voltage (VDC) 400 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) - 8.3 ms single half sine-wave 30 A
Maximum Instantaneous Forward Voltage (VF) @ 1 A 1.1 V
Maximum DC Reverse Current (IR) @ 400 V 5.0 μA
Operating Junction and Storage Temperature Range -50 to +150 °C
Package DO-41 (DO-204AL)
Mounting Type Through Hole

Key Features

  • High Voltage Handling: The 1N4004GPE-M3/54 can handle a maximum repetitive peak reverse voltage of 400 V, making it suitable for applications requiring medium to high voltage rectification.
  • Low Forward Voltage Drop: With a maximum instantaneous forward voltage of 1.1 V at 1 A, this diode minimizes power losses during forward conduction.
  • High Surge Current Capability: It can withstand a peak forward surge current of 30 A for 8.3 ms, ensuring robust performance under transient conditions.
  • Wide Operating Temperature Range: The diode operates within a temperature range of -50 °C to +150 °C, making it versatile for various environmental conditions.
  • Through-Hole Mounting: The DO-41 (DO-204AL) package is suitable for through-hole mounting, providing a secure and reliable connection.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Employed in inverter and converter circuits to manage power flow and direction.
  • Freewheeling Diodes: Acts as a freewheeling diode in motor control and power electronic circuits to protect against back EMF.
  • Automotive and Industrial Systems: Suitable for use in automotive and industrial systems requiring reliable and efficient rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GPE-M3/54?

    The maximum repetitive peak reverse voltage is 400 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the maximum instantaneous forward voltage at 1 A?

    The maximum instantaneous forward voltage at 1 A is 1.1 V.

  4. What is the operating junction and storage temperature range of the 1N4004GPE-M3/54?

    The operating junction and storage temperature range is -50 °C to +150 °C.

  5. What type of package does the 1N4004GPE-M3/54 come in?

    The diode comes in a DO-41 (DO-204AL) package.

  6. What is the peak forward surge current capability of this diode?

    The peak forward surge current is 30 A for 8.3 ms single half sine-wave.

  7. What are some common applications of the 1N4004GPE-M3/54?

    Common applications include power supplies, inverters, converters, and freewheeling diodes in automotive and industrial systems.

  8. What is the maximum DC reverse current at 400 V?

    The maximum DC reverse current at 400 V is 5.0 μA.

  9. Is the 1N4004GPE-M3/54 suitable for through-hole mounting?

    Yes, it is suitable for through-hole mounting.

  10. What is the typical thermal resistance of the 1N4004GPE-M3/54?

    The typical thermal resistance (RθJA) is 50 °C/W.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
512

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
PMEG3002ESF315
PMEG3002ESF315
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

SM6T39AHE3_A/H
SM6T39AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T30CA-M3/52
SM6T30CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM15T39CA-M3/9AT
SM15T39CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM15T33CAHE3/57T
SM15T33CAHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM6T18AHM3/I
SM6T18AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T22CAHM3/H
SM6T22CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
BAV99-HE3-08
BAV99-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 150MA SOT23
BAS21-E3-08
BAS21-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
BAS21-E3-18
BAS21-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
BAT54-E3-18
BAT54-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
BZX84C39-E3-08
BZX84C39-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX84B3V3-E3-18
BZX84B3V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3