1N4004GPE-M3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPE-M3/54

Manufacturer No:
1N4004GPE-M3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURPOSE DO-204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPE-M3/54 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N4001 through 1N4007 series, which are widely used in various applications requiring rectification of power supplies, inverters, converters, and freewheeling diodes. The 1N4004GPE-M3/54 is known for its reliability and performance in handling medium to high voltage and current requirements.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 400 V
Maximum RMS Voltage (VRMS) 280 V
Maximum DC Blocking Voltage (VDC) 400 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) - 8.3 ms single half sine-wave 30 A
Maximum Instantaneous Forward Voltage (VF) @ 1 A 1.1 V
Maximum DC Reverse Current (IR) @ 400 V 5.0 μA
Operating Junction and Storage Temperature Range -50 to +150 °C
Package DO-41 (DO-204AL)
Mounting Type Through Hole

Key Features

  • High Voltage Handling: The 1N4004GPE-M3/54 can handle a maximum repetitive peak reverse voltage of 400 V, making it suitable for applications requiring medium to high voltage rectification.
  • Low Forward Voltage Drop: With a maximum instantaneous forward voltage of 1.1 V at 1 A, this diode minimizes power losses during forward conduction.
  • High Surge Current Capability: It can withstand a peak forward surge current of 30 A for 8.3 ms, ensuring robust performance under transient conditions.
  • Wide Operating Temperature Range: The diode operates within a temperature range of -50 °C to +150 °C, making it versatile for various environmental conditions.
  • Through-Hole Mounting: The DO-41 (DO-204AL) package is suitable for through-hole mounting, providing a secure and reliable connection.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Employed in inverter and converter circuits to manage power flow and direction.
  • Freewheeling Diodes: Acts as a freewheeling diode in motor control and power electronic circuits to protect against back EMF.
  • Automotive and Industrial Systems: Suitable for use in automotive and industrial systems requiring reliable and efficient rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GPE-M3/54?

    The maximum repetitive peak reverse voltage is 400 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the maximum instantaneous forward voltage at 1 A?

    The maximum instantaneous forward voltage at 1 A is 1.1 V.

  4. What is the operating junction and storage temperature range of the 1N4004GPE-M3/54?

    The operating junction and storage temperature range is -50 °C to +150 °C.

  5. What type of package does the 1N4004GPE-M3/54 come in?

    The diode comes in a DO-41 (DO-204AL) package.

  6. What is the peak forward surge current capability of this diode?

    The peak forward surge current is 30 A for 8.3 ms single half sine-wave.

  7. What are some common applications of the 1N4004GPE-M3/54?

    Common applications include power supplies, inverters, converters, and freewheeling diodes in automotive and industrial systems.

  8. What is the maximum DC reverse current at 400 V?

    The maximum DC reverse current at 400 V is 5.0 μA.

  9. Is the 1N4004GPE-M3/54 suitable for through-hole mounting?

    Yes, it is suitable for through-hole mounting.

  10. What is the typical thermal resistance of the 1N4004GPE-M3/54?

    The typical thermal resistance (RθJA) is 50 °C/W.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
512

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

SM15T27A-E3/57T
SM15T27A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC DO214AB
SM6T22CA-M3/52
SM6T22CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SM6T36AHE3_A/I
SM6T36AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
SM6T6V8AHE3_A/H
SM6T6V8AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM6T39CAHE3_A/I
SM6T39CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T24CAHM3_A/I
SM6T24CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
SM6T33CAHM3_A/I
SM6T33CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM15T22CA-E3/9AT
SM15T22CA-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
BAS20-G3-08
BAS20-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
BAT42W-HE3-18
BAT42W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BZX384C75-G3-18
BZX384C75-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323
BZX384C2V7-G3-08
BZX384C2V7-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.7V 200MW SOD323