BAS20-G3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS20-G3-08

Manufacturer No:
BAS20-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 150V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS20-G3-08 is a fast switching diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the BAS20-G series, which is known for its high performance and reliability in various electronic applications. The BAS20-G3-08 is packaged in the SOT-23 format, making it suitable for surface-mount technology (SMT) and ideal for applications where space is limited.

This diode is AEC-Q101 qualified, indicating its suitability for automotive and other demanding environments. It is widely used in applications requiring fast switching times and low forward voltage drop.

Key Specifications

Parameter Symbol Typical Value Maximum Value Unit
Reverse Voltage VR - 150 V
Forward Voltage VF 1.0 1.25 V
Leakage Current IR - 100 nA nA
Maximum Average Forward Rectified Current IF(AV) - 250 mA mA
DC Forward Current IF - 350 mA mA
Repetitive Peak Forward Current IFRM - 625 mA mA
Power Dissipation (on FR-4 board) Ptot - 300 mW mW
Thermal Resistance Junction to Ambient Air RthJA - 420 K/W K/W
Junction Temperature Tj - 150 °C °C
Storage Temperature Range Tstg -65 to +150 - °C
Operating Temperature Range Top -55 to +150 - °C

Key Features

  • Fast Switching: The BAS20-G3-08 is designed for fast switching applications, making it ideal for high-frequency circuits.
  • Low Forward Voltage Drop: With a typical forward voltage of 1.0 V and a maximum of 1.25 V, this diode minimizes energy loss in forward bias conditions.
  • High Reverse Voltage Rating: The diode has a reverse voltage rating of 150 V, providing robust protection against reverse voltage spikes.
  • Low Leakage Current: The leakage current is typically 100 nA, ensuring minimal current drain when the diode is reverse-biased.
  • AEC-Q101 Qualified: Suitable for automotive and other harsh environments due to its compliance with the AEC-Q101 standard.
  • Compact SOT-23 Package: Ideal for surface-mount technology and space-constrained applications.

Applications

  • Automotive Systems: Used in various automotive applications such as power conversion for LED headlights, dashboard displays, and electronic control units (ECUs).
  • Consumer Electronics: Suitable for use in consumer electronics where fast switching and low forward voltage drop are required.
  • Telecommunications Equipment: Employed in telecommunications equipment for signal processing and protection.
  • Computing and Industrial Systems: Used in computing and industrial systems for voltage regulation, signal limiting, and circuit protection.

Q & A

  1. What is the reverse voltage rating of the BAS20-G3-08 diode?

    The reverse voltage rating of the BAS20-G3-08 diode is 150 V.

  2. What is the typical forward voltage of the BAS20-G3-08 diode?

    The typical forward voltage of the BAS20-G3-08 diode is 1.0 V.

  3. What is the maximum average forward rectified current for the BAS20-G3-08 diode?

    The maximum average forward rectified current for the BAS20-G3-08 diode is 250 mA.

  4. Is the BAS20-G3-08 diode AEC-Q101 qualified?

    Yes, the BAS20-G3-08 diode is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

  5. What is the package type of the BAS20-G3-08 diode?

    The BAS20-G3-08 diode is packaged in the SOT-23 format.

  6. What is the junction temperature range for the BAS20-G3-08 diode?

    The junction temperature range for the BAS20-G3-08 diode is -55 to +150 °C.

  7. What is the thermal resistance junction to ambient air for the BAS20-G3-08 diode?

    The thermal resistance junction to ambient air for the BAS20-G3-08 diode is 420 K/W.

  8. What are some common applications of the BAS20-G3-08 diode?

    The BAS20-G3-08 diode is commonly used in automotive systems, consumer electronics, telecommunications equipment, and computing and industrial systems.

  9. What is the storage temperature range for the BAS20-G3-08 diode?

    The storage temperature range for the BAS20-G3-08 diode is -65 to +150 °C.

  10. What is the repetitive peak forward current for the BAS20-G3-08 diode?

    The repetitive peak forward current for the BAS20-G3-08 diode is 625 mA.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 150 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.04
20,130

Please send RFQ , we will respond immediately.

Same Series
BAS19-G3-18
BAS19-G3-18
DIODE GEN PURP 100V 200MA SOT23
BAS20-G3-18
BAS20-G3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-G3-08
BAS19-G3-08
DIODE GEN PURP 100V 200MA SOT23
BAS20-G3-08
BAS20-G3-08
DIODE GEN PURP 150V 200MA SOT23
BAS21-G3-08
BAS21-G3-08
DIODE GEN PURP 200V 200MA SOT23

Similar Products

Part Number BAS20-G3-08 BAS20-G3-18 BAS21-G3-08 BAS20-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 150 V 150 V 200 V 150 V
Current - Average Rectified (Io) 200mA 200mA 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 150 V 100 nA @ 150 V 100 nA @ 200 V 100 nA @ 150 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM15T100A-E3/57T
SM15T100A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM6T15CAHM3_A/I
SM6T15CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM15T39CA-M3/9AT
SM15T39CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM6T68AHE3/52
SM6T68AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM6T220AHM3/I
SM6T220AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
BAT54-E3-18
BAT54-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
BAS40-00-G3-18
BAS40-00-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 200MA SOT23
MUR160-E3/54
MUR160-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC
BZX384C16-E3-18
BZX384C16-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 200MW SOD323
BZX384B2V4-HE3-08
BZX384B2V4-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323
BZX84B3V3-E3-18
BZX84B3V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX384B27-E3-08
BZX384B27-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 200MW SOD323