MBR120VLSFT1H
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onsemi MBR120VLSFT1H

Manufacturer No:
MBR120VLSFT1H
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR120VLSFT1H is a Schottky Power Rectifier produced by onsemi, utilizing the Schottky Barrier principle with a large area metal-to-silicon power diode. This device is designed for low voltage, high frequency rectification and is suitable for applications requiring compact size and weight, such as free wheeling and polarity protection diodes in surface mount configurations. It is particularly ideal for use in portable and battery-powered products like cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 20 V
Average Rectified Forward Current (Rated VR) IF(AV) 1.0 A
Non-Repetitive Peak Surge Current IFSM 45 A
Storage Temperature Range Tstg −65 to +125 °C
Operating Junction Temperature TJ −65 to +125 °C
Maximum Instantaneous Forward Voltage (IF = 1.0 A) VF 0.340 V
Maximum Instantaneous Reverse Current (Rated DC Voltage) IR 0.60 mA
Package Type SOD-123FL
Mounting Method Surface Mount

Key Features

  • Guardring for Stress Protection
  • Optimized for Very Low Forward Voltage
  • 125°C Operating Junction Temperature
  • Epoxy Meets UL 94 V−0 @ 0.125 in
  • Package Designed for Optimal Automated Board Assembly
  • ESD Ratings: Machine Model, C; Human Body Model, 3B
  • Pb−Free, Halogen Free/BFR Free and RoHS Compliant

Applications

The MBR120VLSFT1H is suitable for various applications where compact size, low voltage, and high frequency rectification are critical. Typical applications include:

  • AC-DC and DC-DC converters
  • Reverse battery protection
  • “Oring” of multiple supply voltages
  • Portable and battery-powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards

Q & A

  1. What is the peak repetitive reverse voltage of the MBR120VLSFT1H?

    The peak repetitive reverse voltage (VRRM) is 20 V.

  2. What is the average rectified forward current rating of the MBR120VLSFT1H?

    The average rectified forward current (IF(AV)) is 1.0 A.

  3. What is the maximum non-repetitive peak surge current for the MBR120VLSFT1H?

    The non-repetitive peak surge current (IFSM) is 45 A.

  4. What is the operating junction temperature range of the MBR120VLSFT1H?

    The operating junction temperature (TJ) range is from −65°C to +125°C.

  5. What is the maximum instantaneous forward voltage at 1.0 A for the MBR120VLSFT1H?

    The maximum instantaneous forward voltage (VF) at 1.0 A is 0.340 V.

  6. Is the MBR120VLSFT1H RoHS compliant?
  7. What package type does the MBR120VLSFT1H come in?

    The MBR120VLSFT1H comes in the SOD-123FL package.

  8. What are some typical applications for the MBR120VLSFT1H?

    Typical applications include AC-DC and DC-DC converters, reverse battery protection, and portable and battery-powered products.

  9. Does the MBR120VLSFT1H have any special features for stress protection?
  10. Is the MBR120VLSFT1H suitable for automated board assembly?

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:340 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:600 µA @ 20 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SOD-123F
Supplier Device Package:SOD-123FL
Operating Temperature - Junction:-65°C ~ 125°C
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Similar Products

Part Number MBR120VLSFT1H MBR120LSFT1H MBR120VLSFT1 MBR120VLSFT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 20 V 20 V 20 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 340 mV @ 1 A 450 mV @ 1 A 340 mV @ 1 A 340 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 600 µA @ 20 V 400 µA @ 20 V 600 µA @ 20 V 600 µA @ 20 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123F SOD-123F SOD-123F SOD-123F
Supplier Device Package SOD-123FL SOD-123FL SOD-123FL SOD-123FL
Operating Temperature - Junction -65°C ~ 125°C -55°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C

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MBR120VLSFT1H
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onsemi
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