BYV29B-600,118
  • Share:

WeEn Semiconductors BYV29B-600,118

Manufacturer No:
BYV29B-600,118
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 9A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV29B-600,118 is an ultrafast rectifier diode produced by WeEn Semiconductors. It is designed for use as output rectifiers in high-frequency switched-mode power supplies. This diode features a low forward voltage and fast switching characteristics, making it suitable for applications requiring high efficiency and low power loss.

Key Specifications

Parameter Conditions Min Typ Max Unit
VRRM (Repetitive Peak Reverse Voltage) - - - 600 V
VRWM (Crest Working Reverse Voltage) - - - 600 V
IF(AV) (Average Forward Current) Square wave; δ = 0.5; Tmb ≤ 120 °C - - 9 A
IFRM (Repetitive Peak Forward Current) Square wave; t = 25 μs; δ = 0.5; Tmb ≤ 120 °C - - 18 A
IFSM (Non-Repetitive Peak Forward Current) Sinusoidal; tp = 10 ms - - 70 A
VF (Forward Voltage) IF = 8 A; Tj = 150 °C - 0.9 1.03 V
trr (Reverse Recovery Time) IF = 1 A; VR ≥ 30 V; dIF/dt = 100 A/μs - 50 60 ns
Tstg (Storage Temperature) - -40 - 150 °C
Tj (Junction Temperature) - - - 150 °C

Key Features

  • Low Forward Voltage: The BYV29B-600,118 has a low forward voltage (VF ≤ 1.03 V at IF = 8 A and Tj = 150 °C), which reduces power losses in high-frequency applications.
  • Fast Switching: This diode is characterized by fast switching times, with a reverse recovery time (trr) of 50-60 ns.
  • Soft Recovery Characteristic: It features a soft recovery characteristic, which helps in reducing electromagnetic interference (EMI) and improving overall system reliability.
  • High Thermal Cycling Performance: The diode is designed to handle high thermal cycling, ensuring stable performance over a wide temperature range.
  • Ultrafast Rectification: Suitable for high-frequency switched-mode power supplies due to its ultrafast rectification capabilities.

Applications

  • Switched-Mode Power Supplies: Ideal for use as output rectifiers in high-frequency switched-mode power supplies.
  • Low Loss Rectification: Used in applications requiring low power loss and high efficiency.
  • Industrial and Automotive Systems: Can be used in various industrial and automotive applications where high reliability and performance are critical.

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the BYV29B-600,118?

    The maximum repetitive peak reverse voltage (VRRM) is 600 V.

  2. What is the average forward current (IF(AV)) rating of this diode?

    The average forward current (IF(AV)) is rated at 9 A for a square wave with δ = 0.5 and Tmb ≤ 120 °C.

  3. What is the typical forward voltage (VF) at 8 A and 150 °C junction temperature?

    The typical forward voltage (VF) at 8 A and 150 °C junction temperature is 0.9 V.

  4. What is the reverse recovery time (trr) of the BYV29B-600,118?

    The reverse recovery time (trr) is between 50-60 ns.

  5. What is the storage temperature range for this diode?

    The storage temperature range is from -40 °C to 150 °C.

  6. What are the key features of the BYV29B-600,118?

    The key features include low forward voltage, fast switching, soft recovery characteristic, and high thermal cycling performance.

  7. In what type of applications is the BYV29B-600,118 typically used?

    It is typically used in high-frequency switched-mode power supplies and applications requiring low loss rectification.

  8. What is the package type of the BYV29B-600,118?

    The diode is packaged in a SOT404 (D2PAK) surface mount plastic package.

  9. What is the thermal resistance from junction to mounting base (Rth(j-mb))?

    The thermal resistance from junction to mounting base (Rth(j-mb)) is typically 2.5 K/W.

  10. How does the soft recovery characteristic benefit the system?

    The soft recovery characteristic helps in reducing electromagnetic interference (EMI) and improving overall system reliability.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):9A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
350

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYV29B-600,118 BYV29FB-600,118 BYV29B-500,118
Manufacturer WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 500 V
Current - Average Rectified (Io) 9A 9A 9A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 8 A 1.9 V @ 8 A 1.25 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 35 ns 60 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 500 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK D2PAK D2PAK
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL

Related Product By Brand

BYC15-600,127
BYC15-600,127
WeEn Semiconductors
DIODE GEN PURP 500V 15A TO220AC
BT151X-500RNQ
BT151X-500RNQ
WeEn Semiconductors
SCR 500V TO220-3
BT151-650R,127
BT151-650R,127
WeEn Semiconductors
SCR 650V 12A TO220AB
BT169G-MQP
BT169G-MQP
WeEn Semiconductors
SCR 600V 800MA TO92-3
BTA41-600BQ
BTA41-600BQ
WeEn Semiconductors
BTA41-600BQ/II TO3P/STANDARD MAR
BT134W-600D,115
BT134W-600D,115
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
BTA206X-800CT/DGQ
BTA206X-800CT/DGQ
WeEn Semiconductors
TRIAC STND 800V 6A TO220F
BTA208S-800E,118
BTA208S-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 8A DPAK
BTA316-800B,127
BTA316-800B,127
WeEn Semiconductors
TRIAC 800V 16A TO220AB
BT138B-800E,118
BT138B-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 12A D2PAK
BTA225B-800BTJ
BTA225B-800BTJ
WeEn Semiconductors
BTA225B-800BT/D2PAK/REEL 13" Q
BUJ100LR,126
BUJ100LR,126
WeEn Semiconductors
TRANS NPN 400V 1A TO92-3