BYV29B-600,118
  • Share:

WeEn Semiconductors BYV29B-600,118

Manufacturer No:
BYV29B-600,118
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 9A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV29B-600,118 is an ultrafast rectifier diode produced by WeEn Semiconductors. It is designed for use as output rectifiers in high-frequency switched-mode power supplies. This diode features a low forward voltage and fast switching characteristics, making it suitable for applications requiring high efficiency and low power loss.

Key Specifications

Parameter Conditions Min Typ Max Unit
VRRM (Repetitive Peak Reverse Voltage) - - - 600 V
VRWM (Crest Working Reverse Voltage) - - - 600 V
IF(AV) (Average Forward Current) Square wave; δ = 0.5; Tmb ≤ 120 °C - - 9 A
IFRM (Repetitive Peak Forward Current) Square wave; t = 25 μs; δ = 0.5; Tmb ≤ 120 °C - - 18 A
IFSM (Non-Repetitive Peak Forward Current) Sinusoidal; tp = 10 ms - - 70 A
VF (Forward Voltage) IF = 8 A; Tj = 150 °C - 0.9 1.03 V
trr (Reverse Recovery Time) IF = 1 A; VR ≥ 30 V; dIF/dt = 100 A/μs - 50 60 ns
Tstg (Storage Temperature) - -40 - 150 °C
Tj (Junction Temperature) - - - 150 °C

Key Features

  • Low Forward Voltage: The BYV29B-600,118 has a low forward voltage (VF ≤ 1.03 V at IF = 8 A and Tj = 150 °C), which reduces power losses in high-frequency applications.
  • Fast Switching: This diode is characterized by fast switching times, with a reverse recovery time (trr) of 50-60 ns.
  • Soft Recovery Characteristic: It features a soft recovery characteristic, which helps in reducing electromagnetic interference (EMI) and improving overall system reliability.
  • High Thermal Cycling Performance: The diode is designed to handle high thermal cycling, ensuring stable performance over a wide temperature range.
  • Ultrafast Rectification: Suitable for high-frequency switched-mode power supplies due to its ultrafast rectification capabilities.

Applications

  • Switched-Mode Power Supplies: Ideal for use as output rectifiers in high-frequency switched-mode power supplies.
  • Low Loss Rectification: Used in applications requiring low power loss and high efficiency.
  • Industrial and Automotive Systems: Can be used in various industrial and automotive applications where high reliability and performance are critical.

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the BYV29B-600,118?

    The maximum repetitive peak reverse voltage (VRRM) is 600 V.

  2. What is the average forward current (IF(AV)) rating of this diode?

    The average forward current (IF(AV)) is rated at 9 A for a square wave with δ = 0.5 and Tmb ≤ 120 °C.

  3. What is the typical forward voltage (VF) at 8 A and 150 °C junction temperature?

    The typical forward voltage (VF) at 8 A and 150 °C junction temperature is 0.9 V.

  4. What is the reverse recovery time (trr) of the BYV29B-600,118?

    The reverse recovery time (trr) is between 50-60 ns.

  5. What is the storage temperature range for this diode?

    The storage temperature range is from -40 °C to 150 °C.

  6. What are the key features of the BYV29B-600,118?

    The key features include low forward voltage, fast switching, soft recovery characteristic, and high thermal cycling performance.

  7. In what type of applications is the BYV29B-600,118 typically used?

    It is typically used in high-frequency switched-mode power supplies and applications requiring low loss rectification.

  8. What is the package type of the BYV29B-600,118?

    The diode is packaged in a SOT404 (D2PAK) surface mount plastic package.

  9. What is the thermal resistance from junction to mounting base (Rth(j-mb))?

    The thermal resistance from junction to mounting base (Rth(j-mb)) is typically 2.5 K/W.

  10. How does the soft recovery characteristic benefit the system?

    The soft recovery characteristic helps in reducing electromagnetic interference (EMI) and improving overall system reliability.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):9A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
350

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYV29B-600,118 BYV29FB-600,118 BYV29B-500,118
Manufacturer WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 500 V
Current - Average Rectified (Io) 9A 9A 9A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 8 A 1.9 V @ 8 A 1.25 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 35 ns 60 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 500 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK D2PAK D2PAK
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

BYQ28E-200E,127
BYQ28E-200E,127
WeEn Semiconductors
DIODE ARRAY GP 200V 10A TO220AB
BYV32E-200PQ
BYV32E-200PQ
WeEn Semiconductors
DIODE ARRAY GP 200V 10A TO220AB
BYQ28ED-200PLJ
BYQ28ED-200PLJ
WeEn Semiconductors
DIODE ARRAY GP 200V 10A DPAK
NXPSC10650D6J
NXPSC10650D6J
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A DPAK
BYV29-600PQ
BYV29-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 9A TO220AB
Z0109MN0,135
Z0109MN0,135
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
BTA201-800ER,116
BTA201-800ER,116
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BTA41-600BQ
BTA41-600BQ
WeEn Semiconductors
BTA41-600BQ/II TO3P/STANDARD MAR
ACTT2X-800E/DGQ
ACTT2X-800E/DGQ
WeEn Semiconductors
TRIAC SENS GATE 800V 2A TO220F
BTA206X-800CT/DGQ
BTA206X-800CT/DGQ
WeEn Semiconductors
TRIAC STND 800V 6A TO220F
BT137S-600F,118
BT137S-600F,118
WeEn Semiconductors
TRIAC 600V 8A DPAK
BUJ100,126
BUJ100,126
WeEn Semiconductors
TRANS NPN 400V 1A TO92-3