BYV29B-600,118
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WeEn Semiconductors BYV29B-600,118

Manufacturer No:
BYV29B-600,118
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 9A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV29B-600,118 is an ultrafast rectifier diode produced by WeEn Semiconductors. It is designed for use as output rectifiers in high-frequency switched-mode power supplies. This diode features a low forward voltage and fast switching characteristics, making it suitable for applications requiring high efficiency and low power loss.

Key Specifications

Parameter Conditions Min Typ Max Unit
VRRM (Repetitive Peak Reverse Voltage) - - - 600 V
VRWM (Crest Working Reverse Voltage) - - - 600 V
IF(AV) (Average Forward Current) Square wave; δ = 0.5; Tmb ≤ 120 °C - - 9 A
IFRM (Repetitive Peak Forward Current) Square wave; t = 25 μs; δ = 0.5; Tmb ≤ 120 °C - - 18 A
IFSM (Non-Repetitive Peak Forward Current) Sinusoidal; tp = 10 ms - - 70 A
VF (Forward Voltage) IF = 8 A; Tj = 150 °C - 0.9 1.03 V
trr (Reverse Recovery Time) IF = 1 A; VR ≥ 30 V; dIF/dt = 100 A/μs - 50 60 ns
Tstg (Storage Temperature) - -40 - 150 °C
Tj (Junction Temperature) - - - 150 °C

Key Features

  • Low Forward Voltage: The BYV29B-600,118 has a low forward voltage (VF ≤ 1.03 V at IF = 8 A and Tj = 150 °C), which reduces power losses in high-frequency applications.
  • Fast Switching: This diode is characterized by fast switching times, with a reverse recovery time (trr) of 50-60 ns.
  • Soft Recovery Characteristic: It features a soft recovery characteristic, which helps in reducing electromagnetic interference (EMI) and improving overall system reliability.
  • High Thermal Cycling Performance: The diode is designed to handle high thermal cycling, ensuring stable performance over a wide temperature range.
  • Ultrafast Rectification: Suitable for high-frequency switched-mode power supplies due to its ultrafast rectification capabilities.

Applications

  • Switched-Mode Power Supplies: Ideal for use as output rectifiers in high-frequency switched-mode power supplies.
  • Low Loss Rectification: Used in applications requiring low power loss and high efficiency.
  • Industrial and Automotive Systems: Can be used in various industrial and automotive applications where high reliability and performance are critical.

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the BYV29B-600,118?

    The maximum repetitive peak reverse voltage (VRRM) is 600 V.

  2. What is the average forward current (IF(AV)) rating of this diode?

    The average forward current (IF(AV)) is rated at 9 A for a square wave with δ = 0.5 and Tmb ≤ 120 °C.

  3. What is the typical forward voltage (VF) at 8 A and 150 °C junction temperature?

    The typical forward voltage (VF) at 8 A and 150 °C junction temperature is 0.9 V.

  4. What is the reverse recovery time (trr) of the BYV29B-600,118?

    The reverse recovery time (trr) is between 50-60 ns.

  5. What is the storage temperature range for this diode?

    The storage temperature range is from -40 °C to 150 °C.

  6. What are the key features of the BYV29B-600,118?

    The key features include low forward voltage, fast switching, soft recovery characteristic, and high thermal cycling performance.

  7. In what type of applications is the BYV29B-600,118 typically used?

    It is typically used in high-frequency switched-mode power supplies and applications requiring low loss rectification.

  8. What is the package type of the BYV29B-600,118?

    The diode is packaged in a SOT404 (D2PAK) surface mount plastic package.

  9. What is the thermal resistance from junction to mounting base (Rth(j-mb))?

    The thermal resistance from junction to mounting base (Rth(j-mb)) is typically 2.5 K/W.

  10. How does the soft recovery characteristic benefit the system?

    The soft recovery characteristic helps in reducing electromagnetic interference (EMI) and improving overall system reliability.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):9A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:150°C (Max)
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Similar Products

Part Number BYV29B-600,118 BYV29FB-600,118 BYV29B-500,118
Manufacturer WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 500 V
Current - Average Rectified (Io) 9A 9A 9A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 8 A 1.9 V @ 8 A 1.25 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 35 ns 60 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 500 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK D2PAK D2PAK
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max)

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