Overview
The MBR1100RLG is a Schottky Barrier Rectifier produced by onsemi, designed to leverage the Schottky Barrier principle in a large area metal-to-silicon power diode. This rectifier features state-of-the-art geometry with epitaxial construction, oxide passivation, and metal overlap contact. It is particularly suited for applications in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes. The device is known for its high efficiency, low power loss, and stable oxide passivated junction, making it a reliable choice for various electronic circuits.
Key Specifications
| Symbol | Characteristic | Value | Unit |
|---|---|---|---|
| VRRM | Peak Repetitive Reverse Voltage | 100 | V |
| IO | Average Rectified Forward Current | 1.0 | A |
| IFRM | Peak Repetitive Forward Current | 2.0 | A |
| IFSM | Non-Repetitive Peak Surge Current | 50 | A |
| TJ, Tstg | Operating and Storage Junction Temperature Range | −65 to +175 | °C |
| VF | Maximum Instantaneous Forward Voltage (at 1 A, 25°C) | 0.79 | V |
| iR | Maximum Instantaneous Reverse Current (at Rated dc Voltage, 25°C) | 0.5 | mA |
| RθJA | Thermal Resistance, Junction-to-Ambient | 50°C/W (typical) | °C/W |
Key Features
- Low Reverse Current
- Low Stored Charge, Majority Carrier Conduction
- Low Power Loss/High Efficiency
- Highly Stable Oxide Passivated Junction
- Guard-Ring for Stress Protection
- Low Forward Voltage
- 175°C Operating Junction Temperature
- High Surge Capacity
- Pb-Free and RoHS Compliant
Applications
The MBR1100RLG is ideally suited for use in various applications, including:
- Low-voltage, high-frequency inverters
- Free-wheeling diodes
- Polarity protection diodes
Q & A
- What is the peak repetitive reverse voltage of the MBR1100RLG?
The peak repetitive reverse voltage (VRRM) is 100 V.
- What is the average rectified forward current rating of the MBR1100RLG?
The average rectified forward current (IO) is 1.0 A.
- What is the maximum instantaneous forward voltage of the MBR1100RLG at 1 A and 25°C?
The maximum instantaneous forward voltage (VF) at 1 A and 25°C is 0.79 V.
- Is the MBR1100RLG Pb-Free and RoHS compliant?
- What is the operating junction temperature range of the MBR1100RLG?
The operating junction temperature range (TJ) is −65 to +175°C.
- What are the typical applications for the MBR1100RLG?
The MBR1100RLG is typically used in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes.
- What is the thermal resistance, junction-to-ambient (RθJA), of the MBR1100RLG?
The thermal resistance, junction-to-ambient (RθJA), is typically 50°C/W.
- Does the MBR1100RLG have any special features for stress protection?
- What is the non-repetitive peak surge current rating of the MBR1100RLG?
The non-repetitive peak surge current (IFSM) is 50 A.
- What is the package type of the MBR1100RLG?
The MBR1100RLG comes in an axial lead (DO-41) package.
