1N4148WS RRG
  • Share:

Taiwan Semiconductor Corporation 1N4148WS RRG

Manufacturer No:
1N4148WS RRG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 150MA SOD323F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148WS RRG is a high-speed switching diode produced by Taiwan Semiconductor Corporation. This component is designed for low power loss and high efficiency, making it ideal for various electronic applications. It is packaged in the SOD-323F case, which is suitable for automated placement and meets several industry standards for reliability and safety.

Key Specifications

Parameter Symbol Value Unit
Reverse Voltage VRRM 100 V
Forward Current IF 150 mA
Non-repetitive Peak Forward Current IFSM 300 mA (t = 1s), 1 A (t = 1us) A
Forward Voltage at IF = 100mA VF 1 V
Junction Temperature Range TJ -65 to +150 °C
Storage Temperature Range TSTG -65 to +150 °C
Power Dissipation PD 200 mW
Junction-to-ambient Thermal Resistance RθJA 625 °C/W
Reverse Recovery Time trr 4 ns
Junction Capacitance CJ 4 pF

Key Features

  • Low power loss and high efficiency.
  • Ideal for automated placement due to its SOD-323F package.
  • High surge current capability.
  • Moisture sensitivity level: level 1, per J-STD-020.
  • RoHS Compliant.
  • Meets JESD 201 class 1A whisker test.
  • Molding compound meets UL 94V-0 flammability rating.
  • Matte tin plated leads, solderable per J-STD-002.

Applications

  • Switching mode power supply (SMPS).
  • Adapters.
  • Lighting applications.
  • On-board DC/DC converters.

Q & A

  1. What is the maximum reverse voltage of the 1N4148WS RRG diode?

    The maximum reverse voltage (VRRM) is 100 V.

  2. What is the forward current rating of the 1N4148WS RRG diode?

    The forward current (IF) is rated at 150 mA.

  3. What is the non-repetitive peak forward current of the 1N4148WS RRG diode?

    The non-repetitive peak forward current (IFSM) is 300 mA for a duration of 1 second and 1 A for a duration of 1 microsecond.

  4. What is the forward voltage drop at 100 mA for the 1N4148WS RRG diode?

    The forward voltage drop (VF) at 100 mA is approximately 1 V.

  5. What is the junction temperature range for the 1N4148WS RRG diode?

    The junction temperature range (TJ) is from -65°C to +150°C.

  6. Is the 1N4148WS RRG diode RoHS compliant?
  7. What is the typical junction-to-ambient thermal resistance of the 1N4148WS RRG diode?

    The typical junction-to-ambient thermal resistance (RθJA) is 625 °C/W.

  8. What is the reverse recovery time of the 1N4148WS RRG diode?

    The reverse recovery time (trr) is approximately 4 ns.

  9. What are some common applications of the 1N4148WS RRG diode?

    Common applications include switching mode power supplies (SMPS), adapters, lighting applications, and on-board DC/DC converters.

  10. What is the moisture sensitivity level of the 1N4148WS RRG diode?

    The moisture sensitivity level is level 1, per J-STD-020.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-90, SOD-323F
Supplier Device Package:SOD-323F
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.29
2,126

Please send RFQ , we will respond immediately.

Same Series
1N4148WS RRG
1N4148WS RRG
DIODE GEN PURP 75V 150MA SOD323F
1N4448WS RRG
1N4448WS RRG
DIODE GEN PURP 100V 150MA SOD323

Related Product By Categories

STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

BAS21A RFG
BAS21A RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 250V 200MA SOT23
MUR1660CT
MUR1660CT
Taiwan Semiconductor Corporation
DIODE ARRAY GP 600V 16A TO220AB
BAT42W RHG
BAT42W RHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD123
MUR460SHR7G
MUR460SHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
1N4004G R1G
1N4004G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BZV55B3V6 L0G
BZV55B3V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZV55B10 L1G
BZV55B10 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
BZV55C20 L1G
BZV55C20 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW MINI MELF
BZV55C9V1 L1G
BZV55C9V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 500MW MINI MELF
BZX55C13 A0G
BZX55C13 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW DO35
MMBT3906L RFG
MMBT3906L RFG
Taiwan Semiconductor Corporation
TRANS PNP 40V 0.2A SOT23