1N4937GHA0G
  • Share:

Taiwan Semiconductor Corporation 1N4937GHA0G

Manufacturer No:
1N4937GHA0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4937GHA0G is a general-purpose fast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed for high-efficiency applications and is part of the Automotive AEC-Q101 series, ensuring reliability and performance in various automotive and industrial environments. It features a peak repetitive reverse voltage of 600V and an average rectified output current of 1A, making it suitable for a wide range of power management and rectification tasks.

Key Specifications

CharacteristicSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM600V
Working Peak Reverse VoltageVRWM600V
RMS Reverse VoltageVR(RMS)420V
Average Rectified Output Current @ TA = 75°CIO1.0A
Non-Repetitive Peak Forward Surge CurrentIFSM30A
Forward Voltage @ IF = 1.0AVFM1.2V
Peak Reverse Current @ TA = 25°CIRM5.0μA
Reverse Recovery Timetrr200ns
Typical Junction CapacitanceCj15pF
Typical Thermal Resistance Junction to AmbientRθJA100K/W
Operating and Storage Temperature RangeTJ, TSTG-65 to +150°C
PackageDO-204AL, DO-41, Axial

Key Features

  • Glass Passivated Die Construction: Ensures high reliability and durability.
  • Diffused Junction: Provides efficient current handling.
  • Fast Switching for High Efficiency: Ideal for applications requiring quick recovery times.
  • High Current Capability and Low Forward Voltage Drop: Supports high current applications with minimal voltage drop.
  • Surge Overload Rating to 30A Peak: Offers protection against transient surges.
  • Lead Free Finish, RoHS Compliant: Meets environmental standards for lead-free components.
  • AEC-Q101 Qualified: Suitable for automotive applications requiring high reliability.

Applications

The 1N4937GHA0G diode is versatile and can be used in various applications, including:

  • Automotive Systems: Suitable for power electronics in vehicles due to its AEC-Q101 qualification.
  • Power Supplies: Used in rectifier circuits for efficient power conversion.
  • Industrial Power Management: Ideal for high-voltage and high-current applications in industrial settings.
  • Consumer Electronics: Can be used in power management circuits of consumer electronic devices.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4937GHA0G diode?
    The peak repetitive reverse voltage is 600V.
  2. What is the average rectified output current of the 1N4937GHA0G diode at 75°C?
    The average rectified output current is 1.0A.
  3. What is the forward voltage drop at 1A current?
    The forward voltage drop is 1.2V.
  4. Is the 1N4937GHA0G diode RoHS compliant?
    Yes, it has a lead-free finish and is RoHS compliant.
  5. What are the operating and storage temperature ranges for the 1N4937GHA0G diode?
    The operating and storage temperature ranges are -65°C to +150°C.
  6. What is the reverse recovery time of the 1N4937GHA0G diode?
    The reverse recovery time is 200ns.
  7. What are the typical applications of the 1N4937GHA0G diode?
    It is used in automotive systems, power supplies, industrial power management, and consumer electronics.
  8. What is the package type of the 1N4937GHA0G diode?
    The package types are DO-204AL, DO-41, and Axial.
  9. Is the 1N4937GHA0G diode suitable for high-surge applications?
    Yes, it has a surge overload rating to 30A peak.
  10. What is the typical junction capacitance of the 1N4937GHA0G diode?
    The typical junction capacitance is 15pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
352

Please send RFQ , we will respond immediately.

Same Series
1N4935GHR1G
1N4935GHR1G
DIODE GEN PURP 200V 1A DO204AL
1N4933GHR0G
1N4933GHR0G
DIODE GEN PURP 50V 1A DO204AL
1N4935G R0G
1N4935G R0G
DIODE GEN PURP 200V 1A DO204AL
1N4935GHR0G
1N4935GHR0G
DIODE GEN PURP 200V 1A DO204AL
1N4933GHA0G
1N4933GHA0G
DIODE GEN PURP 50V 1A DO204AL
1N4934G A0G
1N4934G A0G
DIODE GEN PURP 100V 1A DO204AL
1N4934GHA0G
1N4934GHA0G
DIODE GEN PURP 100V 1A DO204AL
1N4935G A0G
1N4935G A0G
DIODE GEN PURP 200V 1A DO204AL
1N4937G A0G
1N4937G A0G
DIODE GEN PURP 600V 1A DO204AL
1N4937GHA0G
1N4937GHA0G
DIODE GEN PURP 600V 1A DO204AL
1N4933GHB0G
1N4933GHB0G
DIODE GEN PURP 50V 1A DO204AL
1N4934G B0G
1N4934G B0G
DIODE GEN PURP 100V 1A DO204AL

Similar Products

Part Number 1N4937GHA0G 1N4937GHB0G 1N4934GHA0G 1N4935GHA0G 1N4936GHA0G 1N4937G A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 200 ns 200 ns 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

BAS70-05 RFG
BAS70-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
BAT54T REG
BAT54T REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
BAV99W RVG
BAV99W RVG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 85V 150MA SOT323
MUR160S
MUR160S
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
MUR420HB0G
MUR420HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
BAS85-L0 L0G
BAS85-L0 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
LL4007G L0G
LL4007G L0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A MELF
BZV55B30 L0G
BZV55B30 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZX84C22 RFG
BZX84C22 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 22V 300MW SOT23
ZM4733A L0G
ZM4733A L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 1W MELF
BZV55B20 L1G
BZV55B20 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW MINI MELF
BZV55B5V6 L1G
BZV55B5V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF