MUR420HA0G
  • Share:

Taiwan Semiconductor Corporation MUR420HA0G

Manufacturer No:
MUR420HA0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 200V 4A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR420HA0G is a high-performance rectifier diode produced by Taiwan Semiconductor Corporation. This component is part of the MUR series, known for its ultrafast recovery times and high efficiency, making it ideal for various power management and switching applications. The MUR420HA0G is housed in a through-hole DO-201AD package, which is suitable for automated placement and offers robust mechanical and thermal characteristics.

Key Specifications

Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 200 V
Average Rectified Forward Current (Square Wave) IF(AV) 4.0 @ TA = 80°C A
Nonrepetitive Peak Surge Current IFSM 125 A
Operating Junction Temperature & Storage Temperature TJ, Tstg -65 to +175 °C
Maximum Instantaneous Forward Voltage vF 1.05 @ IF = 4.0 A, TJ = 25°C V
Maximum Reverse Recovery Time trr 75 ns @ IF = 1.0 A, di/dt = 50 A/μs ns
Maximum Forward Recovery Time tfr 25 ns @ IF = 1.0 A, di/dt = 100 A/μs ns
Lead Temperature for Soldering Purposes 260°C Max. for 10 Seconds °C

Key Features

  • Ultrafast Recovery Times: The MUR420HA0G features ultrafast recovery times of 75 ns, making it suitable for high-frequency switching applications.
  • High Operating Junction Temperature: The device can operate at junction temperatures up to 175°C, ensuring reliability in demanding environments.
  • Low Forward Voltage: It has a low forward voltage drop, which minimizes power loss and enhances efficiency.
  • Low Leakage Current: The diode exhibits low leakage current, reducing standby power consumption.
  • High Temperature Glass Passivated Junction: This feature provides high reliability and stability under various operating conditions.
  • Pb-Free Packages: The component is available in Pb-free packages, aligning with environmental and regulatory standards.

Applications

The MUR420HA0G is designed for use in a variety of applications, including:

  • Switching Power Supplies: Its ultrafast recovery times and low forward voltage make it ideal for high-efficiency power supplies.
  • Inverters: The diode's high operating junction temperature and low leakage current are beneficial in inverter circuits.
  • Free Wheeling Diodes: It is commonly used as a free-wheeling diode in motor control and power conversion systems.
  • General Purpose Rectification: The MUR420HA0G can be used in various general-purpose rectification applications where high reliability and efficiency are required.

Q & A

  1. What is the peak repetitive reverse voltage of the MUR420HA0G?

    The peak repetitive reverse voltage (VRRM) of the MUR420HA0G is 200 V.

  2. What is the average rectified forward current of the MUR420HA0G?

    The average rectified forward current (IF(AV)) is 4.0 A at a temperature of 80°C.

  3. What is the maximum operating junction temperature of the MUR420HA0G?

    The maximum operating junction temperature is 175°C.

  4. What is the maximum reverse recovery time of the MUR420HA0G?

    The maximum reverse recovery time (trr) is 75 ns at a current of 1.0 A and a di/dt of 50 A/μs).

  5. Is the MUR420HA0G Pb-free?
  6. What are the typical applications of the MUR420HA0G?

    The MUR420HA0G is typically used in switching power supplies, inverters, and as free-wheeling diodes).

  7. What is the maximum instantaneous forward voltage of the MUR420HA0G?

    The maximum instantaneous forward voltage (vF) is 1.05 V at a current of 4.0 A and a junction temperature of 25°C).

  8. What is the nonrepetitive peak surge current of the MUR420HA0G?

    The nonrepetitive peak surge current (IFSM) is 125 A).

  9. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C for a maximum of 10 seconds).

  10. Is the MUR420HA0G suitable for high-frequency applications?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:890 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
601

Please send RFQ , we will respond immediately.

Same Series
MUR420 A0G
MUR420 A0G
DIODE GEN PURP 200V 4A DO201AD
MUR420HA0G
MUR420HA0G
DIODE GEN PURP 200V 4A DO201AD
MUR440 A0G
MUR440 A0G
DIODE GEN PURP 400V 4A DO201AD
MUR440HA0G
MUR440HA0G
DIODE GEN PURP 400V 4A DO201AD
MUR460HA0G
MUR460HA0G
DIODE GEN PURP 600V 4A DO201AD
MUR420 B0G
MUR420 B0G
DIODE GEN PURP 200V 4A DO201AD
MUR420HB0G
MUR420HB0G
DIODE GEN PURP 200V 4A DO201AD
MUR440 B0G
MUR440 B0G
DIODE GEN PURP 400V 4A DO201AD
MUR440HB0G
MUR440HB0G
DIODE GEN PURP 400V 4A DO201AD
MUR460 B0G
MUR460 B0G
DIODE GEN PURP 600V 4A DO201AD
MUR460HB0G
MUR460HB0G
DIODE GEN PURP 600V 4A DO201AD

Similar Products

Part Number MUR420HA0G MUR440HA0G MUR460HA0G MUR4L20HA0G MUR420HB0G MUR420 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V 200 V 200 V
Current - Average Rectified (Io) 4A 4A 4A 4A 4A 4A
Voltage - Forward (Vf) (Max) @ If 890 mV @ 4 A 1.28 V @ 4 A 1.28 V @ 4 A 890 mV @ 4 A 890 mV @ 4 A 890 mV @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 50 ns 50 ns 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V 5 µA @ 200 V 5 µA @ 200 V 5 µA @ 200 V
Capacitance @ Vr, F 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC

Related Product By Brand

1.5KE120A R0G
1.5KE120A R0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
BAT54T REG
BAT54T REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
1N4937G A0G
1N4937G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160AHA0G
MUR160AHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BZV55C6V8 L0G
BZV55C6V8 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW MINI MELF
BZV55B30 L0G
BZV55B30 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZX84C13 RFG
BZX84C13 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 300MW SOT23
BZX84C22 RFG
BZX84C22 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 22V 300MW SOT23
BZX84C30 RFG
BZX84C30 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 30V 300MW SOT23
BZV55B13 L1G
BZV55B13 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW MINI MELF
1N4733G A0G
1N4733G A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 1W DO204AL
BZX79C6V8 A0G
BZX79C6V8 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW DO35