MUR460HB0G
  • Share:

Taiwan Semiconductor Corporation MUR460HB0G

Manufacturer No:
MUR460HB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 600V 4A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR460HB0G is a high-performance rectifier diode produced by Taiwan Semiconductor Corporation. This component is designed for high-frequency rectification and freewheeling applications in various electronic systems. It features a robust construction and advanced materials to ensure reliable operation under demanding conditions.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM600V
Working Peak Reverse VoltageVRWM600V
Maximum DC Blocking VoltageVDC600V
Maximum Average Forward Rectified CurrentIF(AV)4.0A
Peak Forward Surge Current (8.3 ms single half sine-wave)IFSM150A
Operating Junction and Storage Temperature RangeTJ, TSTG-65 to +175°C
Maximum Instantaneous Forward Voltage (at IF = 4.0 A, TJ = 25 °C)VF1.05V
Maximum Reverse Recovery Timetrr50 ns
Package TypeDO-201AD

Key Features

  • Ultrafast Recovery Time: The MUR460HB0G features a maximum reverse recovery time of 50 ns, making it suitable for high-frequency applications.
  • High Voltage and Current Ratings: With a maximum repetitive peak reverse voltage of 600 V and a maximum average forward rectified current of 4.0 A, this diode is designed for demanding applications.
  • Robust Construction: The diode has a DO-201AD package with matte tin plated leads, which are solderable per J-STD-002 and JESD 22-B102 standards.
  • Compliance and Safety: The component meets UL 94 V-0 flammability rating and is RoHS-compliant, ensuring environmental and safety standards are met.

Applications

The MUR460HB0G is typically used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is suitable for various industries including consumer electronics, computers, and telecommunications.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MUR460HB0G?
    The maximum repetitive peak reverse voltage is 600 V.
  2. What is the maximum average forward rectified current of the MUR460HB0G?
    The maximum average forward rectified current is 4.0 A.
  3. What is the package type of the MUR460HB0G?
    The package type is DO-201AD.
  4. What is the maximum operating junction temperature of the MUR460HB0G?
    The maximum operating junction temperature is 175 °C.
  5. Is the MUR460HB0G RoHS-compliant?
    Yes, the MUR460HB0G is RoHS-compliant.
  6. What are the typical applications of the MUR460HB0G?
    The MUR460HB0G is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters.
  7. What is the maximum reverse recovery time of the MUR460HB0G?
    The maximum reverse recovery time is 50 ns.
  8. Does the MUR460HB0G meet any specific safety standards?
    Yes, it meets the UL 94 V-0 flammability rating.
  9. What is the peak forward surge current rating of the MUR460HB0G?
    The peak forward surge current rating is 150 A for an 8.3 ms single half sine-wave.
  10. Are the leads of the MUR460HB0G solderable?
    Yes, the leads are solderable per J-STD-002 and JESD 22-B102 standards.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.28 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
140

Please send RFQ , we will respond immediately.

Same Series
MUR420 A0G
MUR420 A0G
DIODE GEN PURP 200V 4A DO201AD
MUR420HA0G
MUR420HA0G
DIODE GEN PURP 200V 4A DO201AD
MUR440 A0G
MUR440 A0G
DIODE GEN PURP 400V 4A DO201AD
MUR440HA0G
MUR440HA0G
DIODE GEN PURP 400V 4A DO201AD
MUR460HA0G
MUR460HA0G
DIODE GEN PURP 600V 4A DO201AD
MUR420 B0G
MUR420 B0G
DIODE GEN PURP 200V 4A DO201AD
MUR420HB0G
MUR420HB0G
DIODE GEN PURP 200V 4A DO201AD
MUR440 B0G
MUR440 B0G
DIODE GEN PURP 400V 4A DO201AD
MUR440HB0G
MUR440HB0G
DIODE GEN PURP 400V 4A DO201AD
MUR460 B0G
MUR460 B0G
DIODE GEN PURP 600V 4A DO201AD
MUR460HB0G
MUR460HB0G
DIODE GEN PURP 600V 4A DO201AD

Similar Products

Part Number MUR460HB0G MUR4L60HB0G MUR420HB0G MUR440HB0G MUR460 B0G MUR460HA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Discontinued at Digi-Key Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 200 V 400 V 600 V 600 V
Current - Average Rectified (Io) 4A 4A 4A 4A 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.28 V @ 4 A 1.28 V @ 4 A 890 mV @ 4 A 1.28 V @ 4 A 1.28 V @ 4 A 1.28 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 25 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V 10 µA @ 600 V
Capacitance @ Vr, F 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

BAS70-05 RFG
BAS70-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
1N4937GH
1N4937GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160S
MUR160S
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
BAT43-L0 A0
BAT43-L0 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT43X RS
BAT43X RS
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZX585B13 RSG
BZX585B13 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 200MW SOD523F
BZX84C11 RFG
BZX84C11 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 11V 300MW SOT23
BZX84C27 RFG
BZX84C27 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 27V 300MW SOT23
BZV55B16 L1G
BZV55B16 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZX585B9V1 RKG
BZX585B9V1 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 200MW SOD523F
BZX55C8V2 A0G
BZX55C8V2 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW DO35
BC857B RFG
BC857B RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23