MUR460HA0G
  • Share:

Taiwan Semiconductor Corporation MUR460HA0G

Manufacturer No:
MUR460HA0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 600V 4A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR460HA0G is a high-performance, ultrafast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed for general-purpose applications and is known for its high efficiency, low power loss, and fast recovery times. The MUR460HA0G is housed in a DO-201AD (DO-27) package, which is suitable for through-hole mounting. It is AEC-Q101 qualified, making it reliable for use in automotive and other demanding environments.

Key Specifications

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 4.0 A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 4 A
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Capacitance @ Vr, F 65 pF @ 4 V, 1 MHz
Mounting Type Through Hole
Package / Case DO-201AD (DO-27)
Operating Temperature - Junction -55°C ~ 175°C

Key Features

  • Ultrafast recovery time of 50 ns, ensuring high efficiency and low power loss.
  • High maximum repetitive peak reverse voltage of 600 V and maximum average forward rectified current of 4 A.
  • Low forward voltage drop of 1.25 V at 4 A, reducing energy losses.
  • Low reverse leakage current of 10 µA at 600 V, enhancing reliability.
  • AEC-Q101 qualified, making it suitable for automotive and other demanding applications.
  • Through-hole mounting in a DO-201AD package, facilitating easy integration into various circuits.

Applications

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive applications such as power supplies, battery chargers, and DC-DC converters.
  • Power supplies: Suitable for use in switching power supplies, rectifier circuits, and other high-efficiency power conversion applications.
  • Industrial control: Used in industrial control systems, motor drives, and other high-reliability environments.
  • Consumer electronics: Can be used in various consumer electronic devices requiring high-efficiency rectification.

Q & A

  1. What is the maximum reverse voltage rating of the MUR460HA0G diode?

    The maximum reverse voltage rating is 600 V.

  2. What is the average forward rectified current of the MUR460HA0G diode?

    The average forward rectified current is 4 A.

  3. What is the forward voltage drop of the MUR460HA0G diode at 4 A?

    The forward voltage drop is 1.25 V at 4 A.

  4. What is the reverse recovery time of the MUR460HA0G diode?

    The reverse recovery time is 50 ns.

  5. Is the MUR460HA0G diode AEC-Q101 qualified?

    Yes, the MUR460HA0G diode is AEC-Q101 qualified.

  6. What is the operating junction temperature range of the MUR460HA0G diode?

    The operating junction temperature range is -55°C to 175°C.

  7. What type of package does the MUR460HA0G diode come in?

    The MUR460HA0G diode comes in a DO-201AD (DO-27) package.

  8. What are some common applications of the MUR460HA0G diode?

    Common applications include automotive systems, power supplies, industrial control systems, and consumer electronics.

  9. What is the capacitance of the MUR460HA0G diode at 4 V and 1 MHz?

    The capacitance is 65 pF at 4 V and 1 MHz.

  10. What is the reverse leakage current of the MUR460HA0G diode at 600 V?

    The reverse leakage current is 10 µA at 600 V.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.28 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
325

Please send RFQ , we will respond immediately.

Same Series
MUR420 A0G
MUR420 A0G
DIODE GEN PURP 200V 4A DO201AD
MUR420HA0G
MUR420HA0G
DIODE GEN PURP 200V 4A DO201AD
MUR440 A0G
MUR440 A0G
DIODE GEN PURP 400V 4A DO201AD
MUR440HA0G
MUR440HA0G
DIODE GEN PURP 400V 4A DO201AD
MUR460HA0G
MUR460HA0G
DIODE GEN PURP 600V 4A DO201AD
MUR420 B0G
MUR420 B0G
DIODE GEN PURP 200V 4A DO201AD
MUR420HB0G
MUR420HB0G
DIODE GEN PURP 200V 4A DO201AD
MUR440 B0G
MUR440 B0G
DIODE GEN PURP 400V 4A DO201AD
MUR440HB0G
MUR440HB0G
DIODE GEN PURP 400V 4A DO201AD
MUR460 B0G
MUR460 B0G
DIODE GEN PURP 600V 4A DO201AD
MUR460HB0G
MUR460HB0G
DIODE GEN PURP 600V 4A DO201AD

Similar Products

Part Number MUR460HA0G MUR4L60HA0G MUR460HB0G MUR420HA0G MUR440HA0G MUR460 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 200 V 400 V 600 V
Current - Average Rectified (Io) 4A 4A 4A 4A 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.28 V @ 4 A 1.28 V @ 4 A 1.28 V @ 4 A 890 mV @ 4 A 1.28 V @ 4 A 1.28 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 25 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V
Capacitance @ Vr, F 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL

Related Product By Brand

BAV99S REG
BAV99S REG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 85V 150MA SOT363
1N5821H
1N5821H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
1N4937GHA0G
1N4937GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
1N4002G B0G
1N4002G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
MUR160A B0G
MUR160A B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT43-L0 R0
BAT43-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZX84C24 RFG
BZX84C24 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 24V 300MW SOT23
BZV55B2V4 L1G
BZV55B2V4 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 500MW MINI MELF
BZV55B68 L1G
BZV55B68 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BZX79B24 A0G
BZX79B24 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 24V 500MW DO35
BC817-16W RFG
BC817-16W RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT323