1N4002G B0G
  • Share:

Taiwan Semiconductor Corporation 1N4002G B0G

Manufacturer No:
1N4002G B0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002G B0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N400x series, which offers a range of voltage ratings from 50V to 1000V. The 1N4002G specifically has a maximum DC blocking voltage of 100V and is designed for high reliability and efficiency in various electrical applications.

Key Specifications

Parameter Value Unit
Maximum DC Blocking Voltage (VDC) 100 V
Forward Current (IF(AV)) 1 A
Surge Peak Forward Current (IFSM) 30 A
Junction Temperature (TJ) -55 to +150 °C
Reverse Current @ Rated VR (IR) 5 µA @ 25°C, 100 µA @ 125°C µA
Forward Voltage (VF) 1 V @ 1 A V
Junction Capacitance (CJ) 10 pF @ 4V, 1MHz pF
Package DO-204AL (DO-41)
Molding Compound Green compound (halogen-free), meets UL 94V-0 flammability rating
Terminal Pure tin plated leads, solderable per J-STD-002

Key Features

  • Glass Passivated Chip Junction: Ensures high reliability and durability.
  • High Current Capability, Low Forward Voltage (VF): Supports high current applications with minimal power loss.
  • High Surge Current Capability: Can handle surge currents up to 30 A for 8.3 ms.
  • Low Power Loss, High Efficiency: Optimized for efficient operation in various applications.
  • Compliant to RoHS Directive and WEEE: Environmentally friendly, lead-free, and RoHS compliant.
  • Halogen-Free: Meets IEC 61249-2-21 standards for halogen-free compounds.

Applications

  • Switching Mode Power Supply (SMPS): Suitable for use in switching power supplies due to its high efficiency and reliability.
  • Adapters: Used in power adapters for various electronic devices.
  • TV and Monitor: Commonly used in the power supply circuits of TVs and monitors.

Q & A

  1. What is the maximum DC blocking voltage of the 1N4002G B0G diode?

    The maximum DC blocking voltage is 100V.

  2. What is the forward current rating of the 1N4002G B0G diode?

    The forward current rating is 1 A.

  3. What is the surge peak forward current capability of the 1N4002G B0G diode?

    The surge peak forward current capability is 30 A for 8.3 ms.

  4. What is the junction temperature range for the 1N4002G B0G diode?

    The junction temperature range is -55°C to +150°C.

  5. Is the 1N4002G B0G diode RoHS compliant?
  6. What type of package does the 1N4002G B0G diode come in?

    The diode comes in a DO-204AL (DO-41) package.

  7. What is the forward voltage drop of the 1N4002G B0G diode at 1 A?

    The forward voltage drop is approximately 1 V at 1 A.

  8. What is the junction capacitance of the 1N4002G B0G diode?

    The junction capacitance is 10 pF at 4V and 1MHz.

  9. Is the 1N4002G B0G diode suitable for high-surge current applications?
  10. What are some common applications of the 1N4002G B0G diode?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
42

Please send RFQ , we will respond immediately.

Same Series
1N4002G A0G
1N4002G A0G
DIODE GEN PURP 100V 1A DO204AL
1N4005GHA0G
1N4005GHA0G
DIODE GEN PURP 600V 1A DO204AL
1N4006G R1G
1N4006G R1G
DIODE GEN PURP 800V 1A DO204AL
1N4007G R1G
1N4007G R1G
DIODE GEN PURP 1A DO204AL
1N4007GHR1G
1N4007GHR1G
DIODE GEN PURP 1A DO204AL
1N4001GHR0G
1N4001GHR0G
DIODE GEN PURP 50V 1A DO204AL
1N4002G R0G
1N4002G R0G
DIODE GEN PURP 100V 1A DO204AL
1N4002GHR0G
1N4002GHR0G
DIODE GEN PURP 100V 1A DO204AL
1N4003GHR0G
1N4003GHR0G
DIODE GEN PURP 200V 1A DO204AL
1N4001G B0G
1N4001G B0G
DIODE GEN PURP 50V 1A DO204AL
1N4004G B0G
1N4004G B0G
DIODE GEN PURP 400V 1A DO204AL
1N4007GHB0G
1N4007GHB0G
DIODE GEN PURP 1A DO204AL

Similar Products

Part Number 1N4002G B0G 1N4002G R0G 1N4002GHB0G 1N4003G B0G 1N4001G B0G 1N4002G A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Discontinued at Digi-Key Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 200 V 50 V 100 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 50 V 5 µA @ 100 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

BAS316WS RRG
BAS316WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250MA SOD323F
LL4148 L0G
LL4148 L0G
Taiwan Semiconductor Corporation
DIODE GP 75V 150MA MINIMELF
1N4007GH
1N4007GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
MUR460SHM6G
MUR460SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
1N4937G B0G
1N4937G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT43X-M0 RS
BAT43X-M0 RS
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZV55C12 L0G
BZV55C12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55C6V8 L0G
BZV55C6V8 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW MINI MELF
BZV55B27 L0G
BZV55B27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZV55B9V1 L0G
BZV55B9V1 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 500MW MINI MELF
BZV55C11 L1G
BZV55C11 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23