1N4002GHB0G
  • Share:

Taiwan Semiconductor Corporation 1N4002GHB0G

Manufacturer No:
1N4002GHB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GHB0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N400x series, known for its reliability and versatility in various electrical applications. It is packaged in a DO-204AL (DO-41) axial lead configuration, making it suitable for a wide range of power supply and rectification needs.

Key Specifications

ParameterValueUnit
Maximum Repetitive Peak Reverse Voltage (VRRM)100V
Maximum RMS Voltage (VRMS)70V
Maximum DC Blocking Voltage (VDC)100V
Maximum Average Forward Rectified Current (IF(AV))1.0A
Peak Forward Surge Current (IFSM) - 8.3 ms single half sine-wave30A
Maximum Instantaneous Forward Voltage (VF)1.1V
Maximum DC Reverse Current (IR)5.0μA
Operating Junction and Storage Temperature Range-50 to +150°C
PackageDO-204AL (DO-41), Axial

Key Features

  • General-purpose rectification for power supplies, inverters, converters, and freewheeling diodes.
  • High surge current capability.
  • Low forward voltage drop (VF = 1.1 V).
  • UL 94 V-0 flammability rating for the epoxy body.
  • RoHS-compliant and meets JESD 201 class 1A whisker test.
  • Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.

Applications

The 1N4002GHB0G diode is suitable for a variety of applications, including:

  • General purpose rectification in power supplies.
  • Inverters and converters.
  • Freewheeling diodes in switching circuits.
  • Bridge rectifier configurations.

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the 1N4002GHB0G diode?
    The maximum repetitive peak reverse voltage (VRRM) is 100 V.
  2. What is the maximum average forward rectified current (IF(AV)) of this diode?
    The maximum average forward rectified current (IF(AV)) is 1.0 A.
  3. What is the package type of the 1N4002GHB0G diode?
    The package type is DO-204AL (DO-41), axial lead configuration.
  4. Is the 1N4002GHB0G diode RoHS-compliant?
    Yes, the 1N4002GHB0G diode is RoHS-compliant.
  5. What is the maximum operating junction temperature of this diode?
    The maximum operating junction temperature is 150 °C.
  6. What are the typical applications of the 1N4002GHB0G diode?
    Typical applications include general purpose rectification in power supplies, inverters, converters, and freewheeling diodes.
  7. What is the maximum DC reverse current (IR) at rated DC blocking voltage?
    The maximum DC reverse current (IR) at rated DC blocking voltage is 5.0 μA.
  8. Does the 1N4002GHB0G meet any specific flammability ratings?
    Yes, it meets the UL 94 V-0 flammability rating.
  9. What is the peak forward surge current (IFSM) for an 8.3 ms single half sine-wave?
    The peak forward surge current (IFSM) for an 8.3 ms single half sine-wave is 30 A.
  10. Are the leads of the 1N4002GHB0G diode solderable?
    Yes, the leads are matte tin plated and solderable per J-STD-002 and JESD 22-B102.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
403

Please send RFQ , we will respond immediately.

Same Series
1N4001G R0G
1N4001G R0G
DIODE GEN PURP 50V 1A DO204AL
1N4003GHR1G
1N4003GHR1G
DIODE GEN PURP 200V 1A DO204AL
1N4004G R1G
1N4004G R1G
DIODE GEN PURP 400V 1A DO204AL
1N4005GHR1G
1N4005GHR1G
DIODE GEN PURP 600V 1A DO204AL
1N4007G R1G
1N4007G R1G
DIODE GEN PURP 1A DO204AL
1N4003G R0G
1N4003G R0G
DIODE GEN PURP 200V 1A DO204AL
1N4006G A0G
1N4006G A0G
DIODE GEN PURP 800V 1A DO204AL
1N4003G B0G
1N4003G B0G
DIODE GEN PURP 200V 1A DO204AL
1N4003GHB0G
1N4003GHB0G
DIODE GEN PURP 200V 1A DO204AL
1N4005G B0G
1N4005G B0G
DIODE GEN PURP 600V 1A DO204AL
1N4006GHB0G
1N4006GHB0G
DIODE GEN PURP 800V 1A DO204AL
1N4007G B0G
1N4007G B0G
DIODE GEN PURP 1A DO204AL

Similar Products

Part Number 1N4002GHB0G 1N4002GHR0G 1N4003GHB0G 1N4001GHB0G 1N4002G B0G 1N4002GHA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Discontinued at Digi-Key Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 200 V 50 V 100 V 100 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 100 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

MUR160SH
MUR160SH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
MUR460S M6G
MUR460S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
BAT43X RS
BAT43X RS
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZV55C47 L0G
BZV55C47 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZV55C5V1 L0G
BZV55C5V1 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
BZV55C6V2 L0G
BZV55C6V2 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZV55C6V8 L0G
BZV55C6V8 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW MINI MELF
BZV55B27 L1G
BZV55B27 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZV55C6V2 L1G
BZV55C6V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZV55C8V2 L1G
BZV55C8V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW MINI MELF
BC847B RFG
BC847B RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT23
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23