1N4002GHB0G
  • Share:

Taiwan Semiconductor Corporation 1N4002GHB0G

Manufacturer No:
1N4002GHB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GHB0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N400x series, known for its reliability and versatility in various electrical applications. It is packaged in a DO-204AL (DO-41) axial lead configuration, making it suitable for a wide range of power supply and rectification needs.

Key Specifications

ParameterValueUnit
Maximum Repetitive Peak Reverse Voltage (VRRM)100V
Maximum RMS Voltage (VRMS)70V
Maximum DC Blocking Voltage (VDC)100V
Maximum Average Forward Rectified Current (IF(AV))1.0A
Peak Forward Surge Current (IFSM) - 8.3 ms single half sine-wave30A
Maximum Instantaneous Forward Voltage (VF)1.1V
Maximum DC Reverse Current (IR)5.0μA
Operating Junction and Storage Temperature Range-50 to +150°C
PackageDO-204AL (DO-41), Axial

Key Features

  • General-purpose rectification for power supplies, inverters, converters, and freewheeling diodes.
  • High surge current capability.
  • Low forward voltage drop (VF = 1.1 V).
  • UL 94 V-0 flammability rating for the epoxy body.
  • RoHS-compliant and meets JESD 201 class 1A whisker test.
  • Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.

Applications

The 1N4002GHB0G diode is suitable for a variety of applications, including:

  • General purpose rectification in power supplies.
  • Inverters and converters.
  • Freewheeling diodes in switching circuits.
  • Bridge rectifier configurations.

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the 1N4002GHB0G diode?
    The maximum repetitive peak reverse voltage (VRRM) is 100 V.
  2. What is the maximum average forward rectified current (IF(AV)) of this diode?
    The maximum average forward rectified current (IF(AV)) is 1.0 A.
  3. What is the package type of the 1N4002GHB0G diode?
    The package type is DO-204AL (DO-41), axial lead configuration.
  4. Is the 1N4002GHB0G diode RoHS-compliant?
    Yes, the 1N4002GHB0G diode is RoHS-compliant.
  5. What is the maximum operating junction temperature of this diode?
    The maximum operating junction temperature is 150 °C.
  6. What are the typical applications of the 1N4002GHB0G diode?
    Typical applications include general purpose rectification in power supplies, inverters, converters, and freewheeling diodes.
  7. What is the maximum DC reverse current (IR) at rated DC blocking voltage?
    The maximum DC reverse current (IR) at rated DC blocking voltage is 5.0 μA.
  8. Does the 1N4002GHB0G meet any specific flammability ratings?
    Yes, it meets the UL 94 V-0 flammability rating.
  9. What is the peak forward surge current (IFSM) for an 8.3 ms single half sine-wave?
    The peak forward surge current (IFSM) for an 8.3 ms single half sine-wave is 30 A.
  10. Are the leads of the 1N4002GHB0G diode solderable?
    Yes, the leads are matte tin plated and solderable per J-STD-002 and JESD 22-B102.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
403

Please send RFQ , we will respond immediately.

Same Series
1N4003G R1G
1N4003G R1G
DIODE GEN PURP 200V 1A DO204AL
1N4003GHR1G
1N4003GHR1G
DIODE GEN PURP 200V 1A DO204AL
1N4007GHR1G
1N4007GHR1G
DIODE GEN PURP 1A DO204AL
1N4001GHA0G
1N4001GHA0G
DIODE GEN PURP 50V 1A DO204AL
1N4003GHA0G
1N4003GHA0G
DIODE GEN PURP 200V 1A DO204AL
1N4001G B0G
1N4001G B0G
DIODE GEN PURP 50V 1A DO204AL
1N4002GHB0G
1N4002GHB0G
DIODE GEN PURP 100V 1A DO204AL
1N4003G B0G
1N4003G B0G
DIODE GEN PURP 200V 1A DO204AL
1N4005G B0G
1N4005G B0G
DIODE GEN PURP 600V 1A DO204AL
1N4005GHB0G
1N4005GHB0G
DIODE GEN PURP 600V 1A DO204AL
1N4006G B0G
1N4006G B0G
DIODE GEN PURP 800V 1A DO204AL
1N4006GHB0G
1N4006GHB0G
DIODE GEN PURP 800V 1A DO204AL

Similar Products

Part Number 1N4002GHB0G 1N4002GHR0G 1N4003GHB0G 1N4001GHB0G 1N4002G B0G 1N4002GHA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Discontinued at Digi-Key Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 200 V 50 V 100 V 100 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 100 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL

Related Product By Brand

BAV99L
BAV99L
Taiwan Semiconductor Corporation
SOT-23, 70V, 0.2A, SWITCHING DIO
BAV70 RFG
BAV70 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
1N914BWS RRG
1N914BWS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD323
RB751V-40 RRG
RB751V-40 RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 30MA SOD323
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR460S M6G
MUR460S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
BAT43-L0 A0
BAT43-L0 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55C16 L0G
BZV55C16 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZX84C10 RFG
BZX84C10 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 10V 300MW SOT23
BZV55C10 L1G
BZV55C10 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
BZV55C20 L1G
BZV55C20 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW MINI MELF
BZX585B9V1 RKG
BZX585B9V1 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 200MW SOD523F