1N4004G R1G
  • Share:

Taiwan Semiconductor Corporation 1N4004G R1G

Manufacturer No:
1N4004G R1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004G R1G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed to handle high current and voltage requirements, making it suitable for a variety of applications. It features a glass passivated chip junction, which enhances its reliability and performance. The 1N4004G R1G is packaged in a DO-204AL (DO-41) case, which is widely used in through-hole mounting configurations.

Key Specifications

Parameter Value Unit
Part Number 1N4004G R1G -
Manufacturer Taiwan Semiconductor Corporation -
Description DIODE GEN PURP 400V 1A DO204AL -
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max) 400 V -
Supplier Device Package DO-204AL (DO-41) -
Speed Standard Recovery >500ns, > 200mA (Io) -
Operating Temperature - Junction -55°C ~ 150°C -
Mounting Type Through Hole -
Current - Reverse Leakage @ Vr 5 µA @ 400 V
Current - Average Rectified (Io) 1 A -
Capacitance @ Vr, F 10 pF @ 4 V, 1 MHz
Lead Free Status / RoHS Status Lead free / RoHS Compliant -

Key Features

  • High Current Capability: The 1N4004G R1G can handle an average rectified current of 1 A, making it suitable for high-current applications.
  • Low Forward Voltage: With a maximum forward voltage of 1 V at 1 A, this diode minimizes power loss and enhances efficiency.
  • High Surge Current Capability: It can withstand surge peak forward currents, ensuring reliability in demanding applications.
  • Glass Passivated Chip Junction: This feature improves the diode's reliability and performance by reducing the risk of junction degradation.
  • RoHS Compliant and Halogen-Free: The diode is compliant with RoHS Directive 2011/65/EU and is halogen-free, making it environmentally friendly.
  • Through-Hole Mounting: Packaged in a DO-204AL (DO-41) case, it is easy to integrate into through-hole designs.

Applications

  • Switching Mode Power Supplies (SMPS): The high current and surge capabilities make it ideal for SMPS applications.
  • Adapters and Power Supplies: Suitable for use in various power supply units due to its high reliability and efficiency.
  • TV and Monitor Circuits: Often used in the power circuits of televisions and monitors to handle rectification needs.
  • General Rectification: Can be used in any application requiring a reliable and efficient rectifier diode.

Q & A

  1. What is the maximum reverse voltage of the 1N4004G R1G diode?

    The maximum reverse voltage (Vr) is 400 V.

  2. What is the average rectified current (Io) of the 1N4004G R1G?

    The average rectified current (Io) is 1 A.

  3. What is the forward voltage (Vf) of the 1N4004G R1G at 1 A?

    The forward voltage (Vf) at 1 A is 1 V.

  4. Is the 1N4004G R1G RoHS compliant?

    Yes, the 1N4004G R1G is RoHS compliant and halogen-free.

  5. What is the operating junction temperature range of the 1N4004G R1G?

    The operating junction temperature range is -55°C to 150°C.

  6. What type of package does the 1N4004G R1G come in?

    The diode is packaged in a DO-204AL (DO-41) case.

  7. What is the reverse leakage current of the 1N4004G R1G at 400 V?

    The reverse leakage current at 400 V is 5 µA.

  8. Can the 1N4004G R1G handle surge currents?

    Yes, it can handle surge peak forward currents, making it suitable for applications requiring high surge current capability.

  9. What are some common applications of the 1N4004G R1G?

    Common applications include switching mode power supplies, adapters, TV and monitor circuits, and general rectification.

  10. Is the 1N4004G R1G suitable for through-hole mounting?

    Yes, it is designed for through-hole mounting.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
557

Please send RFQ , we will respond immediately.

Same Series
1N4005G A0G
1N4005G A0G
DIODE GEN PURP 600V 1A DO204AL
1N4001GHR1G
1N4001GHR1G
DIODE GEN PURP 50V 1A DO204AL
1N4002GHR1G
1N4002GHR1G
DIODE GEN PURP 100V 1A DO204AL
1N4004GHR1G
1N4004GHR1G
DIODE GEN PURP 400V 1A DO204AL
1N4006G R1G
1N4006G R1G
DIODE GEN PURP 800V 1A DO204AL
1N4002G R0G
1N4002G R0G
DIODE GEN PURP 100V 1A DO204AL
1N4001GHA0G
1N4001GHA0G
DIODE GEN PURP 50V 1A DO204AL
1N4002GHA0G
1N4002GHA0G
DIODE GEN PURP 100V 1A DO204AL
1N4003G A0G
1N4003G A0G
DIODE GEN PURP 200V 1A DO204AL
1N4003GHA0G
1N4003GHA0G
DIODE GEN PURP 200V 1A DO204AL
1N4004GHA0G
1N4004GHA0G
DIODE GEN PURP 400V 1A DO204AL
1N4001G B0G
1N4001G B0G
DIODE GEN PURP 50V 1A DO204AL

Similar Products

Part Number 1N4004G R1G 1N4004GHR1G 1N4005G R1G 1N4003G R1G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Discontinued at Digi-Key Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 600 V 200 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

BAS70-06 RFG
BAS70-06 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
BAT42W RHG
BAT42W RHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD123
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
1N5821 A0G
1N5821 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT42 R0
BAT42 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAS85-L0 L1
BAS85-L0 L1
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
BZV55C27 L0G
BZV55C27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZX84C27 RFG
BZX84C27 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 27V 300MW SOT23
ZM4733A L0G
ZM4733A L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 1W MELF
BZV55B2V7 L1G
BZV55B2V7 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.7V 500MW MINI MELF
BZV55C8V2 L1G
BZV55C8V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW MINI MELF
BC847B RFG
BC847B RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT23