1N4004G R1G
  • Share:

Taiwan Semiconductor Corporation 1N4004G R1G

Manufacturer No:
1N4004G R1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004G R1G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed to handle high current and voltage requirements, making it suitable for a variety of applications. It features a glass passivated chip junction, which enhances its reliability and performance. The 1N4004G R1G is packaged in a DO-204AL (DO-41) case, which is widely used in through-hole mounting configurations.

Key Specifications

Parameter Value Unit
Part Number 1N4004G R1G -
Manufacturer Taiwan Semiconductor Corporation -
Description DIODE GEN PURP 400V 1A DO204AL -
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max) 400 V -
Supplier Device Package DO-204AL (DO-41) -
Speed Standard Recovery >500ns, > 200mA (Io) -
Operating Temperature - Junction -55°C ~ 150°C -
Mounting Type Through Hole -
Current - Reverse Leakage @ Vr 5 µA @ 400 V
Current - Average Rectified (Io) 1 A -
Capacitance @ Vr, F 10 pF @ 4 V, 1 MHz
Lead Free Status / RoHS Status Lead free / RoHS Compliant -

Key Features

  • High Current Capability: The 1N4004G R1G can handle an average rectified current of 1 A, making it suitable for high-current applications.
  • Low Forward Voltage: With a maximum forward voltage of 1 V at 1 A, this diode minimizes power loss and enhances efficiency.
  • High Surge Current Capability: It can withstand surge peak forward currents, ensuring reliability in demanding applications.
  • Glass Passivated Chip Junction: This feature improves the diode's reliability and performance by reducing the risk of junction degradation.
  • RoHS Compliant and Halogen-Free: The diode is compliant with RoHS Directive 2011/65/EU and is halogen-free, making it environmentally friendly.
  • Through-Hole Mounting: Packaged in a DO-204AL (DO-41) case, it is easy to integrate into through-hole designs.

Applications

  • Switching Mode Power Supplies (SMPS): The high current and surge capabilities make it ideal for SMPS applications.
  • Adapters and Power Supplies: Suitable for use in various power supply units due to its high reliability and efficiency.
  • TV and Monitor Circuits: Often used in the power circuits of televisions and monitors to handle rectification needs.
  • General Rectification: Can be used in any application requiring a reliable and efficient rectifier diode.

Q & A

  1. What is the maximum reverse voltage of the 1N4004G R1G diode?

    The maximum reverse voltage (Vr) is 400 V.

  2. What is the average rectified current (Io) of the 1N4004G R1G?

    The average rectified current (Io) is 1 A.

  3. What is the forward voltage (Vf) of the 1N4004G R1G at 1 A?

    The forward voltage (Vf) at 1 A is 1 V.

  4. Is the 1N4004G R1G RoHS compliant?

    Yes, the 1N4004G R1G is RoHS compliant and halogen-free.

  5. What is the operating junction temperature range of the 1N4004G R1G?

    The operating junction temperature range is -55°C to 150°C.

  6. What type of package does the 1N4004G R1G come in?

    The diode is packaged in a DO-204AL (DO-41) case.

  7. What is the reverse leakage current of the 1N4004G R1G at 400 V?

    The reverse leakage current at 400 V is 5 µA.

  8. Can the 1N4004G R1G handle surge currents?

    Yes, it can handle surge peak forward currents, making it suitable for applications requiring high surge current capability.

  9. What are some common applications of the 1N4004G R1G?

    Common applications include switching mode power supplies, adapters, TV and monitor circuits, and general rectification.

  10. Is the 1N4004G R1G suitable for through-hole mounting?

    Yes, it is designed for through-hole mounting.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
557

Please send RFQ , we will respond immediately.

Same Series
1N4005G A0G
1N4005G A0G
DIODE GEN PURP 600V 1A DO204AL
1N4001G R0G
1N4001G R0G
DIODE GEN PURP 50V 1A DO204AL
1N4002G R1G
1N4002G R1G
DIODE GEN PURP 100V 1A DO204AL
1N4001GHR0G
1N4001GHR0G
DIODE GEN PURP 50V 1A DO204AL
1N4002GHR0G
1N4002GHR0G
DIODE GEN PURP 100V 1A DO204AL
1N4002GHA0G
1N4002GHA0G
DIODE GEN PURP 100V 1A DO204AL
1N4003G A0G
1N4003G A0G
DIODE GEN PURP 200V 1A DO204AL
1N4004GHA0G
1N4004GHA0G
DIODE GEN PURP 400V 1A DO204AL
1N4002G B0G
1N4002G B0G
DIODE GEN PURP 100V 1A DO204AL
1N4005GHB0G
1N4005GHB0G
DIODE GEN PURP 600V 1A DO204AL
1N4006G B0G
1N4006G B0G
DIODE GEN PURP 800V 1A DO204AL
1N4007GHB0G
1N4007GHB0G
DIODE GEN PURP 1A DO204AL

Similar Products

Part Number 1N4004G R1G 1N4004GHR1G 1N4005G R1G 1N4003G R1G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Discontinued at Digi-Key Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 600 V 200 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

1.5KE6.8A R0G
1.5KE6.8A R0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
BZW06-15B A0G
BZW06-15B A0G
Taiwan Semiconductor Corporation
TVS DIODE 15.3VWM 32.5VC DO204AC
MUR460 A0G
MUR460 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
1N4002GHA0G
1N4002GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
MUR160AHA0G
MUR160AHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT43-L0 A0
BAT43-L0 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55C6V8 L0G
BZV55C6V8 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW MINI MELF
BZX585B13 RSG
BZX585B13 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 200MW SOD523F
BZV55B7V5 L1G
BZV55B7V5 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 7.5V 500MW MINI MELF
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
BC817-16 RFG
BC817-16 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23
BSS84W
BSS84W
Taiwan Semiconductor Corporation
-60, -0.14, SINGLE P-CHANNEL