BZV55B9V1 L1G
  • Share:

Taiwan Semiconductor Corporation BZV55B9V1 L1G

Manufacturer No:
BZV55B9V1 L1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE ZENER 9.1V 500MW MINI MELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BZV55B9V1 L1G is a small signal Zener diode produced by Taiwan Semiconductor Corporation. This component is designed to provide voltage regulation and protection in various electronic circuits. It is part of the BZV55 series, known for its reliability and performance in a wide range of applications.

Key Specifications

ParameterValue
Voltage (V_Z)9.1 V
Tolerance±2%
Power Dissipation (P_D)500 mW
Package TypeSurface Mount Mini MELF
Operating Temperature Range-65°C to 150°C

Key Features

  • Small signal Zener diode with high stability and low noise.
  • Surface mount Mini MELF package for compact designs.
  • High power dissipation of 500 mW.
  • Tight voltage tolerance of ±2%.
  • Wide operating temperature range from -65°C to 150°C.

Applications

The BZV55B9V1 L1G Zener diode is suitable for various applications requiring voltage regulation and protection, such as:

  • Voltage reference circuits.
  • Overvoltage protection in electronic devices.
  • Signal clipping and limiting.
  • Regulated power supplies.

Q & A

  1. What is the voltage rating of the BZV55B9V1 L1G Zener diode? The voltage rating is 9.1 V with a tolerance of ±2%.
  2. What is the power dissipation capacity of this diode? The power dissipation capacity is 500 mW.
  3. What type of package does the BZV55B9V1 L1G come in? It comes in a surface mount Mini MELF package.
  4. What is the operating temperature range of this diode? The operating temperature range is from -65°C to 150°C.
  5. What are some common applications of the BZV55B9V1 L1G? Common applications include voltage reference circuits, overvoltage protection, signal clipping, and regulated power supplies.
  6. Who is the manufacturer of the BZV55B9V1 L1G? The manufacturer is Taiwan Semiconductor Corporation.
  7. Where can I find detailed specifications for the BZV55B9V1 L1G? Detailed specifications can be found in the datasheet available on the manufacturer's website or through distributors like Mouser and Digi-Key.
  8. Is the BZV55B9V1 L1G suitable for high-power applications? No, it is designed for small signal applications with a power dissipation of 500 mW.
  9. What is the significance of the 'L1G' suffix in the part number? The 'L1G' suffix indicates the specific package type and configuration of the diode.
  10. Can the BZV55B9V1 L1G be used in high-frequency applications? While it can be used in some high-frequency applications, it is primarily designed for general-purpose voltage regulation and protection.

Product Attributes

Voltage - Zener (Nom) (Vz):9.1 V
Tolerance:±2%
Power - Max:500 mW
Impedance (Max) (Zzt):10 Ohms
Current - Reverse Leakage @ Vr:100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:Mini MELF
0 Remaining View Similar

In Stock

-
381

Please send RFQ , we will respond immediately.

Same Series
BZV55B27 L0G
BZV55B27 L0G
DIODE ZENER 27V 500MW MINI MELF
BZV55B3V6 L0G
BZV55B3V6 L0G
DIODE ZENER 3.6V 500MW MINI MELF
BZV55B6V2 L0G
BZV55B6V2 L0G
DIODE ZENER 6.2V 500MW MINI MELF
BZV55B15 L1G
BZV55B15 L1G
DIODE ZENER 15V 500MW MINI MELF
BZV55B6V2 L1G
BZV55B6V2 L1G
DIODE ZENER 6.2V 500MW MINI MELF
BZV55B16 L1G
BZV55B16 L1G
DIODE ZENER 16V 500MW MINI MELF
BZV55B30 L1G
BZV55B30 L1G
DIODE ZENER 30V 500MW MINI MELF
BZV55B33 L1G
BZV55B33 L1G
DIODE ZENER 33V 500MW MINI MELF
BZV55B39 L1G
BZV55B39 L1G
DIODE ZENER 39V 500MW MINI MELF
BZV55B3V6 L1G
BZV55B3V6 L1G
DIODE ZENER 3.6V 500MW MINI MELF
BZV55B51 L1G
BZV55B51 L1G
DIODE ZENER 51V 500MW MINI MELF
BZV55B5V1 L1G
BZV55B5V1 L1G
DIODE ZENER 5.1V 500MW MINI MELF

Similar Products

Part Number BZV55B9V1 L1G BZV55B5V1 L1G BZV55B9V1 L0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Voltage - Zener (Nom) (Vz) 9.1 V 5.1 V 9.1 V
Tolerance ±2% ±2% ±2%
Power - Max 500 mW 500 mW 500 mW
Impedance (Max) (Zzt) 10 Ohms 35 Ohms 10 Ohms
Current - Reverse Leakage @ Vr 100 nA @ 6.8 V 100 nA @ 1 V 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1 V @ 100 mA 1 V @ 100 mA
Operating Temperature -65°C ~ 175°C (TJ) -65°C ~ 175°C (TJ) -65°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80
Supplier Device Package Mini MELF Mini MELF Mini MELF

Related Product By Categories

1N5231B-TR
1N5231B-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 500MW DO35
BZV55-C6V2,115
BZV55-C6V2,115
Nexperia USA Inc.
DIODE ZENER 6.2V 500MW LLDS
BZV55-B3V6,115
BZV55-B3V6,115
Nexperia USA Inc.
DIODE ZENER 3.6V 500MW LLDS
BZX84-B2V7/DG/B3215
BZX84-B2V7/DG/B3215
NXP USA Inc.
DIODE ZENER
BZX84C43-AQ
BZX84C43-AQ
Diotec Semiconductor
DIODE ZENER 43V 300MW SOT23-3
BZX84B6V8
BZX84B6V8
Diotec Semiconductor
DIODE ZENER 6.8V 300MW SOT23-3
MM3Z3V3T1GX
MM3Z3V3T1GX
Nexperia USA Inc.
VOLTAGE REGULATOR DIODES
SZMMSZ5260BT1G
SZMMSZ5260BT1G
onsemi
DIODE ZENER 43V 500MW SOD123
BZX84C18-E3-08
BZX84C18-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX84B13-E3-08
BZX84B13-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 300MW SOT23-3
BZX84C2V7LYT116
BZX84C2V7LYT116
Rohm Semiconductor
250MW, 2.7V, SOT-23, ZENER DIODE
BZX84C3V0LYFHT116
BZX84C3V0LYFHT116
Rohm Semiconductor
250MW, 3V, SOT-23, AUTOMOTIVE ZE

Related Product By Brand

1.5KE120A R0G
1.5KE120A R0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
SMBJ5.0CAHM4G
SMBJ5.0CAHM4G
Taiwan Semiconductor Corporation
TVS DIODE 5VWM 9.2VC DO214AA
MUR420SH
MUR420SH
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
MUR460SHM6G
MUR460SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
BAS16 RFG
BAS16 RFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOT23
1N5406GHB0G
1N5406GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
BAT42 A0
BAT42 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT42-L0 A0G
BAT42-L0 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55C12 L0G
BZV55C12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55B3V9 L1G
BZV55B3V9 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZV55C10 L1G
BZV55C10 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
BC856A RFG
BC856A RFG
Taiwan Semiconductor Corporation
TRANS PNP 65V 0.1A SOT23