MUR160AHR1G
  • Share:

Taiwan Semiconductor Corporation MUR160AHR1G

Manufacturer No:
MUR160AHR1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160AHR1G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for high-efficiency applications, particularly in power supplies and other power management systems. It features a robust construction and is suitable for various industrial and automotive uses.

Key Specifications

Characteristic Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1 A
Forward Voltage @ If = 1.0A, TJ = 25°C 1.25 V
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600V
Operating Temperature - Junction -55°C ~ 175°C
Package / Case DO-204AL (DO-41), Axial
Mounting Type Through Hole
Non-Repetitive Peak Forward Surge Current 35 A (8.3ms single half sine-wave)
Typical Junction Capacitance 45 pF
Typical Thermal Resistance, Junction to Ambient 72 K/W

Key Features

  • Super-Fast Recovery Time: The MUR160AHR1G features a fast recovery time of 50 ns, making it suitable for high-efficiency applications.
  • Low Forward Voltage Drop: With a forward voltage drop of 1.25V at 1A, this diode minimizes power losses.
  • High Current Capability: It can handle an average rectified current of 1A and a non-repetitive peak forward surge current of 35A.
  • Surge Overload Rating: The diode is rated for surge overload up to 35A peak, ensuring robust performance under transient conditions.
  • Rugged Construction: The diode has a glass passivated die construction and is lead-free, RoHS compliant.
  • Automotive Qualified: It meets AEC-Q101 standards, making it suitable for automotive applications.

Applications

  • Power Supplies: Ideal for use in power supply units due to its high efficiency and low forward voltage drop.
  • Automotive Systems: Suitable for various automotive power electronics and high-voltage systems.
  • Industrial Power Management: Used in industrial power management systems, including rectification and filtering circuits.
  • Switching Power Supplies: Applicable in switching power supplies where fast recovery times are crucial.

Q & A

  1. What is the maximum DC reverse voltage of the MUR160AHR1G diode?

    The maximum DC reverse voltage is 600V.

  2. What is the average rectified current rating of the MUR160AHR1G?

    The average rectified current rating is 1A.

  3. What is the forward voltage drop at 1A for the MUR160AHR1G?

    The forward voltage drop at 1A is 1.25V.

  4. What is the reverse recovery time of the MUR160AHR1G?

    The reverse recovery time is 50 ns.

  5. What is the operating temperature range for the MUR160AHR1G?

    The operating temperature range is -55°C to 175°C.

  6. Is the MUR160AHR1G RoHS compliant?
  7. What is the typical junction capacitance of the MUR160AHR1G?

    The typical junction capacitance is 45 pF.

  8. What is the non-repetitive peak forward surge current rating of the MUR160AHR1G?

    The non-repetitive peak forward surge current rating is 35A (8.3ms single half sine-wave).

  9. What are the common applications of the MUR160AHR1G diode?
  10. Does the MUR160AHR1G meet automotive standards?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
558

Please send RFQ , we will respond immediately.

Same Series
MUR160AHR1G
MUR160AHR1G
DIODE GEN PURP 600V 1A DO204AL
MUR160A A0G
MUR160A A0G
DIODE GEN PURP 600V 1A DO204AL
MUR160AHA0G
MUR160AHA0G
DIODE GEN PURP 600V 1A DO204AL
MUR160A B0G
MUR160A B0G
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number MUR160AHR1G MUR190AHR1G MUR160A R1G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 900 V 600 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.7 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 75 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 900 V 5 µA @ 600 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz 27pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL

Related Product By Brand

1N4001G R0G
1N4001G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
1N5821H
1N5821H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAT43 R0
BAT43 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT43X-M0 RS
BAT43X-M0 RS
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZV55B3V0 L0G
BZV55B3V0 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZV55B18 L1G
BZV55B18 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 500MW MINI MELF
BZV55B20 L1G
BZV55B20 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW MINI MELF
BZX585B8V2 RKG
BZX585B8V2 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 200MW SOD523F
BZX79B5V6 A0G
BZX79B5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35
BC807-25 RFG
BC807-25 RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT23
BC817-25W RFG
BC817-25W RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT323