MUR160AHR1G
  • Share:

Taiwan Semiconductor Corporation MUR160AHR1G

Manufacturer No:
MUR160AHR1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160AHR1G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for high-efficiency applications, particularly in power supplies and other power management systems. It features a robust construction and is suitable for various industrial and automotive uses.

Key Specifications

Characteristic Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1 A
Forward Voltage @ If = 1.0A, TJ = 25°C 1.25 V
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600V
Operating Temperature - Junction -55°C ~ 175°C
Package / Case DO-204AL (DO-41), Axial
Mounting Type Through Hole
Non-Repetitive Peak Forward Surge Current 35 A (8.3ms single half sine-wave)
Typical Junction Capacitance 45 pF
Typical Thermal Resistance, Junction to Ambient 72 K/W

Key Features

  • Super-Fast Recovery Time: The MUR160AHR1G features a fast recovery time of 50 ns, making it suitable for high-efficiency applications.
  • Low Forward Voltage Drop: With a forward voltage drop of 1.25V at 1A, this diode minimizes power losses.
  • High Current Capability: It can handle an average rectified current of 1A and a non-repetitive peak forward surge current of 35A.
  • Surge Overload Rating: The diode is rated for surge overload up to 35A peak, ensuring robust performance under transient conditions.
  • Rugged Construction: The diode has a glass passivated die construction and is lead-free, RoHS compliant.
  • Automotive Qualified: It meets AEC-Q101 standards, making it suitable for automotive applications.

Applications

  • Power Supplies: Ideal for use in power supply units due to its high efficiency and low forward voltage drop.
  • Automotive Systems: Suitable for various automotive power electronics and high-voltage systems.
  • Industrial Power Management: Used in industrial power management systems, including rectification and filtering circuits.
  • Switching Power Supplies: Applicable in switching power supplies where fast recovery times are crucial.

Q & A

  1. What is the maximum DC reverse voltage of the MUR160AHR1G diode?

    The maximum DC reverse voltage is 600V.

  2. What is the average rectified current rating of the MUR160AHR1G?

    The average rectified current rating is 1A.

  3. What is the forward voltage drop at 1A for the MUR160AHR1G?

    The forward voltage drop at 1A is 1.25V.

  4. What is the reverse recovery time of the MUR160AHR1G?

    The reverse recovery time is 50 ns.

  5. What is the operating temperature range for the MUR160AHR1G?

    The operating temperature range is -55°C to 175°C.

  6. Is the MUR160AHR1G RoHS compliant?
  7. What is the typical junction capacitance of the MUR160AHR1G?

    The typical junction capacitance is 45 pF.

  8. What is the non-repetitive peak forward surge current rating of the MUR160AHR1G?

    The non-repetitive peak forward surge current rating is 35A (8.3ms single half sine-wave).

  9. What are the common applications of the MUR160AHR1G diode?
  10. Does the MUR160AHR1G meet automotive standards?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
558

Please send RFQ , we will respond immediately.

Same Series
MUR160AHR1G
MUR160AHR1G
DIODE GEN PURP 600V 1A DO204AL
MUR160A A0G
MUR160A A0G
DIODE GEN PURP 600V 1A DO204AL
MUR160AHA0G
MUR160AHA0G
DIODE GEN PURP 600V 1A DO204AL
MUR160AHB0G
MUR160AHB0G
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number MUR160AHR1G MUR190AHR1G MUR160A R1G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 900 V 600 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.7 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 75 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 900 V 5 µA @ 600 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz 27pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3

Related Product By Brand

MBR10100CTH
MBR10100CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 100V TO220
1N4007GHB0G
1N4007GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
MUR420S R6G
MUR420S R6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BZV55C12 L0G
BZV55C12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55C5V1 L0G
BZV55C5V1 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
BZX84C22 RFG
BZX84C22 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 22V 300MW SOT23
BZV55B3V0 L1G
BZV55B3V0 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZV55B7V5 L1G
BZV55B7V5 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 7.5V 500MW MINI MELF
BZV55C10 L1G
BZV55C10 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
BZX79C15 A0G
BZX79C15 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW DO35
BC847C RFG
BC847C RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT23
BC850CW RFG
BC850CW RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT323