MUR160AHA0G
  • Share:

Taiwan Semiconductor Corporation MUR160AHA0G

Manufacturer No:
MUR160AHA0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160AHA0G is a high-performance, ultrafast recovery rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for use in various high-frequency applications, including switching power supplies, inverters, and as free-wheeling diodes. It is part of the MUR160 series, known for its fast recovery times and high reliability.

Key Specifications

Parameter Value
Manufacturer Taiwan Semiconductor Corporation
Model Name MUR160AHA0G
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V
Capacitance @ Vr, F 27 pF @ 4 V, 1 MHz
Mounting Type Through Hole
Package / Case DO-204AC (DO-15), Axial
Operating Temperature - Junction -55°C ~ 175°C

Key Features

  • Ultrafast Recovery Time: The MUR160AHA0G features ultrafast recovery times of up to 50 ns, making it suitable for high-frequency applications.
  • High Operating Junction Temperature: The diode can operate at junction temperatures ranging from -55°C to 175°C.
  • Low Forward Voltage: It has a low forward voltage drop of 1.25 V at 1 A, reducing power losses.
  • Low Leakage Current: The diode has a low reverse leakage current of 5 µA at 600 V.
  • High Temperature Glass Passivated Junction: Ensures high reliability and durability.
  • Corrosion Resistant and Solderable Leads: All external surfaces are corrosion resistant, and terminal leads are readily solderable.

Applications

The MUR160AHA0G is designed for use in various applications, including:

  • Switching Power Supplies: Due to its ultrafast recovery time, it is ideal for high-frequency switching power supplies.
  • Inverters: Suitable for inverter applications requiring fast recovery diodes.
  • Free-Wheeling Diodes: Often used as free-wheeling diodes in power electronic circuits.

Q & A

  1. What is the maximum DC reverse voltage of the MUR160AHA0G?

    The maximum DC reverse voltage is 600 V.

  2. What is the average rectified current rating of the MUR160AHA0G?

    The average rectified current rating is 1 A.

  3. What is the forward voltage drop at 1 A for the MUR160AHA0G?

    The forward voltage drop at 1 A is 1.25 V.

  4. What is the reverse recovery time of the MUR160AHA0G?

    The reverse recovery time is up to 50 ns.

  5. What is the operating junction temperature range of the MUR160AHA0G?

    The operating junction temperature range is -55°C to 175°C.

  6. What type of package does the MUR160AHA0G come in?

    The diode comes in a DO-204AC (DO-15), Axial package.

  7. Is the MUR160AHA0G suitable for high-frequency applications?

    Yes, it is suitable due to its ultrafast recovery time.

  8. What are some common applications for the MUR160AHA0G?

    Common applications include switching power supplies, inverters, and as free-wheeling diodes.

  9. Does the MUR160AHA0G have corrosion-resistant leads?

    Yes, all external surfaces are corrosion resistant, and terminal leads are readily solderable.

  10. What is the capacitance of the MUR160AHA0G at 4 V and 1 MHz?

    The capacitance is 27 pF at 4 V and 1 MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
199

Please send RFQ , we will respond immediately.

Same Series
MUR160AHR1G
MUR160AHR1G
DIODE GEN PURP 600V 1A DO204AL
MUR160A A0G
MUR160A A0G
DIODE GEN PURP 600V 1A DO204AL
MUR160AHA0G
MUR160AHA0G
DIODE GEN PURP 600V 1A DO204AL
MUR160A B0G
MUR160A B0G
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number MUR160AHA0G MUR190AHA0G MUR160HA0G MUR160AHB0G MUR160A A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 900 V 600 V 600 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.7 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 75 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 900 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AC (DO-15) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY

Related Product By Brand

1.5KE6.8AH
1.5KE6.8AH
Taiwan Semiconductor Corporation
TVS 1500W 6.8V 5% UNIDIR DO-201
MUR1660CT
MUR1660CT
Taiwan Semiconductor Corporation
DIODE ARRAY GP 600V 16A TO220AB
MUR1620CTHC0G
MUR1620CTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 200V 16A TO220AB
MUR820 C0G
MUR820 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AC
1N4004GA0
1N4004GA0
Taiwan Semiconductor Corporation
1A,400V,STD.GLASS PASSIVATED REC
BZV55C3V9 L0G
BZV55C3V9 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZV55C47 L0G
BZV55C47 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZX84C3V9 RFG
BZX84C3V9 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 300MW SOT23
BZV55B30 L1G
BZV55B30 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZV55B68 L1G
BZV55B68 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BZX585B6V2 RKG
BZX585B6V2 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 200MW SOD523F
BZX79C6V8 A0G
BZX79C6V8 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW DO35