MBR10100 C0G
  • Share:

Taiwan Semiconductor Corporation MBR10100 C0G

Manufacturer No:
MBR10100 C0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tube
Description:
DIODE SCHOTTKY 100V 10A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR10100 C0G is a high-performance Schottky diode manufactured by Taiwan Semiconductor Corporation. This component is designed for high-current and high-voltage applications, making it suitable for various power management and rectification needs. The diode features a TO-220AC package, which is widely used in through-hole mounting configurations.

Key Specifications

Parameter Value
Manufacturer Part Number MBR10100 C0G
Manufacturer Taiwan Semiconductor Corporation
Description DIODE SCHOTTKY 100V 10A TO220AC
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 850mV @ 10A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100µA @ 100V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Through Hole
Package / Case TO-220AC
Lead Free Status / RoHS Status Lead free / RoHS Compliant

Key Features

  • High Current Capability: The MBR10100 C0G can handle an average rectified current of 10A, making it suitable for high-power applications.
  • Low Forward Voltage Drop: With a maximum forward voltage drop of 850mV at 10A, this diode minimizes power losses in the system.
  • Fast Recovery Time: The diode features a fast recovery time of less than 500ns, which is crucial for high-frequency applications.
  • Wide Operating Temperature Range: The diode can operate over a junction temperature range of -55°C to 150°C, ensuring reliability in various environmental conditions.
  • RoHS Compliance: The component is lead-free and RoHS compliant, meeting environmental and regulatory standards.

Applications

  • Power Supplies: The MBR10100 C0G is ideal for use in power supply units due to its high current and voltage ratings.
  • Rectifier Circuits: Its fast recovery time and low forward voltage drop make it suitable for rectifier circuits in various electronic systems.
  • Motor Control: This diode can be used in motor control circuits to handle high current and voltage requirements.
  • Industrial Power Systems: It is used in industrial power systems where high reliability and performance are necessary.

Q & A

  1. What is the maximum DC reverse voltage of the MBR10100 C0G?

    The maximum DC reverse voltage is 100V.

  2. What is the average rectified current rating of the MBR10100 C0G?

    The average rectified current rating is 10A.

  3. What is the forward voltage drop at 10A for the MBR10100 C0G?

    The forward voltage drop at 10A is 850mV.

  4. What is the recovery time of the MBR10100 C0G?

    The recovery time is less than 500ns.

  5. What is the operating temperature range of the MBR10100 C0G?

    The operating temperature range is -55°C to 150°C.

  6. Is the MBR10100 C0G RoHS compliant?

    Yes, the MBR10100 C0G is lead-free and RoHS compliant.

  7. What is the package type of the MBR10100 C0G?

    The package type is TO-220AC.

  8. What is the mounting type of the MBR10100 C0G?

    The mounting type is through-hole.

  9. What are some common applications of the MBR10100 C0G?

    Common applications include power supplies, rectifier circuits, motor control, and industrial power systems.

  10. Where can I find the datasheet for the MBR10100 C0G?

    The datasheet can be found on the manufacturer's website or through authorized distributors like Ariat-Tech, Lanka Micro, and Digi-Key.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:850 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
407

Please send RFQ , we will respond immediately.

Same Series
MBR10150 C0G
MBR10150 C0G
DIODE GEN PURP 150V 10A TO220AC
MBR10150HC0G
MBR10150HC0G
DIODE GEN PURP 150V 10A TO220AC
MBR10200 C0G
MBR10200 C0G
DIODE GEN PURP 200V 10A TO220AC
MBR1035 C0G
MBR1035 C0G
DIODE GEN PURP 35V 10A TO220AC
MBR1035HC0G
MBR1035HC0G
DIODE GEN PURP 35V 10A TO220AC
MBR1045 C0G
MBR1045 C0G
DIODE GEN PURP 45V 10A TO220AC
MBR1045HC0G
MBR1045HC0G
DIODE GEN PURP 45V 10A TO220AC
MBR1050 C0G
MBR1050 C0G
DIODE GEN PURP 50V 10A TO220AC
MBR1050HC0G
MBR1050HC0G
DIODE GEN PURP 50V 10A TO220AC
MBR1060HC0G
MBR1060HC0G
DIODE SCHOTTKY 60V 10A TO220AC
MBR1090 C0G
MBR1090 C0G
DIODE GEN PURP 90V 10A TO220AC
MBR1090HC0G
MBR1090HC0G
DIODE GEN PURP 90V 10A TO220AC

Similar Products

Part Number MBR10100 C0G MBR10150 C0G MBR10200 C0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Schottky Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 150 V 200 V
Current - Average Rectified (Io) 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 850 mV @ 10 A 1.05 V @ 10 A 1.05 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 150 V 100 µA @ 200 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK

Related Product By Brand

MUR160AHR1G
MUR160AHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4004GHB0G
1N4004GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BZX85C15 A0G
BZX85C15 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 1.3W DO204AL
BZV55C18 L0G
BZV55C18 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 500MW MINI MELF
BZV55C30 L0G
BZV55C30 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZX585B3V0 RSG
BZX585B3V0 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 200MW SOD523F
BZX585B6V2 RSG
BZX585B6V2 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 200MW SOD523F
BZV55B2V7 L1G
BZV55B2V7 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.7V 500MW MINI MELF
BZV55B30 L1G
BZV55B30 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZV55B4V7 L1G
BZV55B4V7 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW MINI MELF
BZX79C20 A0G
BZX79C20 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW DO35
BC846A RFG
BC846A RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT23