Overview
The RB751S40T1G Schottky barrier diode, produced by onsemi, is designed for high-speed switching applications, circuit protection, and voltage clamping. This diode features an extremely low forward voltage, which reduces conduction loss and makes it ideal for hand-held and portable applications where space is limited. The miniature surface mount package (SOD-523 or SC-79) enhances its suitability for compact designs.
Key Specifications
| Attribute | Symbol | Value | Unit |
|---|---|---|---|
| Peak Reverse Voltage | VRM | 40 | V |
| Reverse Voltage | VR | 30 | V |
| Forward Continuous Current (DC) | IF | 30 | mA |
| Peak Forward Surge Current | IFSM | 500 | mA |
| Forward Voltage | VF | 0.28 (Typ) @ IF = 1.0 mA | V |
| Reverse Current | IR | 0.5 µA (Max) @ VR = 30 V | µA |
| Power Dissipation | PD | 200 mW | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 635 °C/W | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 °C | °C |
| Package Style | SOD-523 (SC-79) | ||
| Mounting Method | Surface Mount |
Key Features
- Extremely Fast Switching Speed
- Extremely Low Forward Voltage: 0.28 V (Typ) @ IF = 1.0 mA
- Low Reverse Current
- Lead-Free Plating
- Pb-Free Package is Available
- Halogen Free/BFR Free and RoHS Compliant
- AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements
Applications
The RB751S40T1G Schottky barrier diode is ideal for various applications, including:
- High-speed switching applications
- Circuit protection
- Voltage clamping
- Hand-held and portable devices where space is limited
- Automotive and industrial applications requiring high reliability and compliance with specific standards
Q & A
- What is the peak reverse voltage of the RB751S40T1G diode? The peak reverse voltage is 40 V.
- What is the forward continuous current rating of the RB751S40T1G diode? The forward continuous current rating is 30 mA.
- What is the typical forward voltage of the RB751S40T1G diode? The typical forward voltage is 0.28 V at IF = 1.0 mA.
- Is the RB751S40T1G diode lead-free and RoHS compliant? Yes, the diode is lead-free, halogen free/BFR free, and RoHS compliant.
- What is the thermal resistance, junction-to-ambient, of the RB751S40T1G diode? The thermal resistance, junction-to-ambient, is 635 °C/W.
- What are the typical applications of the RB751S40T1G diode? The diode is used in high-speed switching applications, circuit protection, voltage clamping, and in hand-held and portable devices.
- What is the package style of the RB751S40T1G diode? The package style is SOD-523 (SC-79).
- Is the RB751S40T1G diode AEC-Q101 qualified? Yes, the diode is AEC-Q101 qualified and PPAP capable.
- What is the maximum peak forward surge current of the RB751S40T1G diode? The maximum peak forward surge current is 500 mA.
- What is the junction and storage temperature range of the RB751S40T1G diode? The junction and storage temperature range is -55 to +150 °C.
