RB751S40T1
  • Share:

onsemi RB751S40T1

Manufacturer No:
RB751S40T1
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 30MA SOD523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751S40T1 Schottky barrier diode, produced by onsemi, is designed for high-speed switching applications, circuit protection, and voltage clamping. This diode is particularly suited for applications where space is limited due to its miniature surface mount package (SOD-523). The extremely low forward voltage of this diode reduces conduction loss, making it ideal for hand-held and portable devices.

Key Specifications

Rating Symbol Value Unit
Peak Reverse Voltage VRM 40 V
Reverse Voltage VR 30 V
Forward Continuous Current (DC) IF 30 mA
Peak Forward Surge Current IFSM 500 mA
Forward Voltage VF 0.28 - 0.37 Vdc
Reverse Leakage Current IR 300 - 500 nAdc
Total Capacitance CT 2.0 - 2.5 pF
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Thermal Resistance, Junction-to-Ambient RθJA 635 °C/W

Key Features

  • Extremely Fast Switching Speed
  • Extremely Low Forward Voltage: 0.28 V (Typ) @ IF = 1.0 mAdc
  • Low Reverse Current
  • Lead-Free Plating
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant
  • AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements

Applications

The RB751S40T1 Schottky barrier diode is suitable for various applications, including:

  • High-speed switching applications
  • Circuit protection
  • Voltage clamping
  • Hand-held and portable devices where space is limited
  • Automotive and industrial applications requiring high reliability and compliance with stringent standards

Q & A

  1. What is the peak reverse voltage of the RB751S40T1 Schottky diode?

    The peak reverse voltage (VRM) is 40 V.

  2. What is the forward continuous current rating of the RB751S40T1?

    The forward continuous current (IF) is 30 mA.

  3. What is the typical forward voltage of the RB751S40T1 at 1 mA current?

    The typical forward voltage (VF) at 1 mA current is 0.28 V.

  4. Is the RB751S40T1 RoHS compliant?
  5. What is the thermal resistance, junction-to-ambient, of the RB751S40T1?

    The thermal resistance, junction-to-ambient (RθJA), is 635 °C/W.

  6. What are the typical applications of the RB751S40T1 Schottky diode?

    The typical applications include high-speed switching, circuit protection, voltage clamping, and use in hand-held and portable devices.

  7. What is the junction and storage temperature range of the RB751S40T1?

    The junction and storage temperature range (TJ, Tstg) is -55 to +150 °C.

  8. Is the RB751S40T1 qualified for automotive applications?
  9. What is the peak forward surge current rating of the RB751S40T1?

    The peak forward surge current (IFSM) is 500 mA.

  10. What package type is the RB751S40T1 available in?

    The RB751S40T1 is available in the SOD-523 package type.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):30mA (DC)
Voltage - Forward (Vf) (Max) @ If:370 mV @ 1 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 nA @ 30 V
Capacitance @ Vr, F:2.5pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:SOD-523
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
513

Please send RFQ , we will respond immediately.

Same Series
RB751S40T5G
RB751S40T5G
DIODE SCHOTTKY 30V 30MA SOD523
NSVRB751S40T1G
NSVRB751S40T1G
DIODE SCHOTTKY 30V 30MA SOD523
RB751S40T1
RB751S40T1
DIODE SCHOTTKY 30V 30MA SOD523

Similar Products

Part Number RB751S40T1 RB751S40T1G RB751V40T1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
Diode Type Schottky Schottky -
Voltage - DC Reverse (Vr) (Max) 30 V 30 V -
Current - Average Rectified (Io) 30mA (DC) 30mA (DC) -
Voltage - Forward (Vf) (Max) @ If 370 mV @ 1 mA 370 mV @ 1 mA -
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed -
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 500 nA @ 30 V 500 nA @ 30 V -
Capacitance @ Vr, F 2.5pF @ 1V, 1MHz 2.5pF @ 1V, 1MHz -
Mounting Type Surface Mount Surface Mount -
Package / Case SC-79, SOD-523 SC-79, SOD-523 -
Supplier Device Package SOD-523 SOD-523 -
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD

Related Product By Brand

SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD