MURS260-M3/5BT
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Vishay General Semiconductor - Diodes Division MURS260-M3/5BT

Manufacturer No:
MURS260-M3/5BT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS260-M3/5BT is a surface-mount ultrafast plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It features a glass passivated pellet chip junction and is ideal for automated placement, making it suitable for a wide range of consumer, computer, and telecommunication applications.

Key Specifications

ParameterSymbolMURS260Unit
Maximum Repetitive Peak Reverse VoltageVRRM600V
Maximum Average Forward Rectified Current at TL = 125 °CIF(AV)2.0A
Peak Forward Surge Current (8.3 ms single half sine-wave superimposed on rated load)IFSM35A
Operating Junction and Storage Temperature RangeTJ, TSTG-65 to +175°C
Maximum Instantaneous Forward Voltage at IF = 2.0 A, TJ = 25 °CVF1.45V
Maximum Reverse Recovery Timetrr50 ns (typical), 75 ns (maximum)ns
PackageSMB (DO-214AA)

Key Features

  • Glass passivated pellet chip junction
  • Ideal for automated placement
  • Ultrafast reverse recovery time
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • Halogen-free, RoHS-compliant, and commercial grade
  • Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

Applications

The MURS260-M3/5BT is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is particularly suitable for consumer, computer, and telecommunication applications.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS260-M3/5BT? The maximum repetitive peak reverse voltage is 600 V.
  2. What is the maximum average forward rectified current at TL = 125 °C? The maximum average forward rectified current is 2.0 A.
  3. What is the peak forward surge current rating? The peak forward surge current is 35 A for an 8.3 ms single half sine-wave superimposed on rated load.
  4. What is the operating junction and storage temperature range? The operating junction and storage temperature range is -65 to +175 °C.
  5. What is the typical reverse recovery time? The typical reverse recovery time is 50 ns, with a maximum of 75 ns.
  6. Is the MURS260-M3/5BT RoHS-compliant? Yes, the MURS260-M3/5BT is RoHS-compliant and halogen-free.
  7. What package type does the MURS260-M3/5BT use? The MURS260-M3/5BT uses the SMB (DO-214AA) package.
  8. What are the typical applications of the MURS260-M3/5BT? It is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters for consumer, computer, and telecommunication applications.
  9. What is the maximum instantaneous forward voltage at IF = 2.0 A and TJ = 25 °C? The maximum instantaneous forward voltage is 1.45 V.
  10. Does the MURS260-M3/5BT meet any specific moisture sensitivity levels? Yes, it meets MSL level 1, per J-STD-020, with an LF maximum peak of 260 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
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Same Series
MURS240-M3/5BT
MURS240-M3/5BT
DIODE GEN PURP 400V 2A DO214AA
MURS240-M3/52T
MURS240-M3/52T
DIODE GEN PURP 400V 2A DO214AA
MURS260-M3/52T
MURS260-M3/52T
DIODE GEN PURP 600V 2A DO214AA

Similar Products

Part Number MURS260-M3/5BT MURS160-M3/5BT MURS240-M3/5BT MURS260-E3/5BT MURS260-M3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 400 V 600 V 600 V
Current - Average Rectified (Io) 2A 1A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 2 A 1.25 V @ 1 A 1.45 V @ 2 A 1.45 V @ 2 A 1.45 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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