Overview
The BAV102-GS18 is a high-voltage small signal switching diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is part of the BAV100/101/102/103 series, known for its silicon epitaxial planar construction and high reliability. It is AEC-Q101 qualified, making it suitable for automotive and other demanding applications. The component is lead-free and compliant with RoHS 2002/95/EC and WEEE 2002/96/EC regulations. The BAV102-GS18 is packaged in a MiniMELF (SOD-80) case, weighing approximately 31 mg, and is available in tape and reel packaging options.
Key Specifications
| Parameter | Test Condition | Symbol | Value | Unit |
|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | Tamb = 25 °C | VRRM | 200 | V |
| Reverse Voltage | Tamb = 25 °C | VR | 150 | V |
| Peak Forward Surge Current | tp = 1 s | IFSM | 1 | A |
| Repetitive Peak Forward Current | Tamb = 25 °C | IFRM | 625 | mA |
| Forward Continuous Current | Tamb = 25 °C | IF | 250 | mA |
| Power Dissipation | Tamb = 25 °C | Ptot | 500 | mW |
| Forward Voltage | IF = 100 mA | VF | 1 | V |
| Reverse Current | VR = 150 V | IR | 100 | nA |
| Junction Temperature | Tamb = 25 °C | Tj | 175 | °C |
| Storage Temperature Range | - | Tstg | -65 to +175 | °C |
| Thermal Resistance Junction to Lead | Tamb = 25 °C | RthJL | 350 | K/W |
| Thermal Resistance Junction to Ambient Air | Tamb = 25 °C, on PC board 50 mm x 50 mm x 1.6 mm | RthJA | 500 | K/W |
| Reverse Recovery Time | IF = IR = 30 mA, iR = 3 mA, RL = 100 Ω | trr | 50 | ns |
Key Features
- Silicon epitaxial planar diode construction for high reliability and performance.
- AEC-Q101 qualified, suitable for automotive and other demanding applications.
- Lead-free and compliant with RoHS 2002/95/EC and WEEE 2002/96/EC regulations.
- MiniMELF (SOD-80) case with a weight of approximately 31 mg.
- Available in tape and reel packaging options (GS18 and GS08).
- Low forward voltage (VF = 1 V at IF = 100 mA) and low reverse current (IR = 100 nA at VR = 150 V).
- High peak forward surge current (IFSM = 1 A) and repetitive peak forward current (IFRM = 625 mA).
- Low power dissipation (Ptot = 500 mW) and high junction temperature (Tj = 175 °C).
Applications
The BAV102-GS18 diode is versatile and can be used in a variety of applications, including:
- General purpose switching and rectification.
- Polarity protection in electronic circuits.
- Signal switching applications due to its fast switching times.
- Automotive systems where high reliability and robustness are required.
- Industrial and consumer electronics where high voltage handling is necessary.
Q & A
- What is the repetitive peak reverse voltage of the BAV102-GS18 diode?
The repetitive peak reverse voltage (VRRM) of the BAV102-GS18 diode is 200 V. - What is the forward continuous current rating of the BAV102-GS18?
The forward continuous current (IF) rating is 250 mA. - What is the power dissipation limit of the BAV102-GS18?
The power dissipation (Ptot) limit is 500 mW. - Is the BAV102-GS18 diode lead-free and RoHS compliant?
Yes, the BAV102-GS18 is lead-free and compliant with RoHS 2002/95/EC and WEEE 2002/96/EC regulations. - What is the junction temperature rating of the BAV102-GS18?
The junction temperature (Tj) rating is 175 °C. - What are the packaging options for the BAV102-GS18?
The BAV102-GS18 is available in tape and reel packaging options, specifically GS18 and GS08. - What is the reverse recovery time of the BAV102-GS18?
The reverse recovery time (trr) is 50 ns. - Is the BAV102-GS18 suitable for automotive applications?
Yes, the BAV102-GS18 is AEC-Q101 qualified, making it suitable for automotive and other demanding applications. - What is the thermal resistance junction to ambient air for the BAV102-GS18?
The thermal resistance junction to ambient air (RthJA) is 500 K/W on a PC board 50 mm x 50 mm x 1.6 mm. - What is the storage temperature range for the BAV102-GS18?
The storage temperature range (Tstg) is -65 to +175 °C.
