BAV102-GS18
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Vishay General Semiconductor - Diodes Division BAV102-GS18

Manufacturer No:
BAV102-GS18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 150V 250MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BAV102-GS18 is a high-voltage small signal switching diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is part of the BAV100/101/102/103 series, known for its silicon epitaxial planar construction and high reliability. It is AEC-Q101 qualified, making it suitable for automotive and other demanding applications. The component is lead-free and compliant with RoHS 2002/95/EC and WEEE 2002/96/EC regulations. The BAV102-GS18 is packaged in a MiniMELF (SOD-80) case, weighing approximately 31 mg, and is available in tape and reel packaging options.

Key Specifications

ParameterTest ConditionSymbolValueUnit
Repetitive Peak Reverse VoltageTamb = 25 °CVRRM200V
Reverse VoltageTamb = 25 °CVR150V
Peak Forward Surge Currenttp = 1 sIFSM1A
Repetitive Peak Forward CurrentTamb = 25 °CIFRM625mA
Forward Continuous CurrentTamb = 25 °CIF250mA
Power DissipationTamb = 25 °CPtot500mW
Forward VoltageIF = 100 mAVF1V
Reverse CurrentVR = 150 VIR100nA
Junction TemperatureTamb = 25 °CTj175°C
Storage Temperature Range-Tstg-65 to +175°C
Thermal Resistance Junction to LeadTamb = 25 °CRthJL350K/W
Thermal Resistance Junction to Ambient AirTamb = 25 °C, on PC board 50 mm x 50 mm x 1.6 mmRthJA500K/W
Reverse Recovery TimeIF = IR = 30 mA, iR = 3 mA, RL = 100 Ωtrr50ns

Key Features

  • Silicon epitaxial planar diode construction for high reliability and performance.
  • AEC-Q101 qualified, suitable for automotive and other demanding applications.
  • Lead-free and compliant with RoHS 2002/95/EC and WEEE 2002/96/EC regulations.
  • MiniMELF (SOD-80) case with a weight of approximately 31 mg.
  • Available in tape and reel packaging options (GS18 and GS08).
  • Low forward voltage (VF = 1 V at IF = 100 mA) and low reverse current (IR = 100 nA at VR = 150 V).
  • High peak forward surge current (IFSM = 1 A) and repetitive peak forward current (IFRM = 625 mA).
  • Low power dissipation (Ptot = 500 mW) and high junction temperature (Tj = 175 °C).

Applications

The BAV102-GS18 diode is versatile and can be used in a variety of applications, including:

  • General purpose switching and rectification.
  • Polarity protection in electronic circuits.
  • Signal switching applications due to its fast switching times.
  • Automotive systems where high reliability and robustness are required.
  • Industrial and consumer electronics where high voltage handling is necessary.

Q & A

  1. What is the repetitive peak reverse voltage of the BAV102-GS18 diode?
    The repetitive peak reverse voltage (VRRM) of the BAV102-GS18 diode is 200 V.
  2. What is the forward continuous current rating of the BAV102-GS18?
    The forward continuous current (IF) rating is 250 mA.
  3. What is the power dissipation limit of the BAV102-GS18?
    The power dissipation (Ptot) limit is 500 mW.
  4. Is the BAV102-GS18 diode lead-free and RoHS compliant?
    Yes, the BAV102-GS18 is lead-free and compliant with RoHS 2002/95/EC and WEEE 2002/96/EC regulations.
  5. What is the junction temperature rating of the BAV102-GS18?
    The junction temperature (Tj) rating is 175 °C.
  6. What are the packaging options for the BAV102-GS18?
    The BAV102-GS18 is available in tape and reel packaging options, specifically GS18 and GS08.
  7. What is the reverse recovery time of the BAV102-GS18?
    The reverse recovery time (trr) is 50 ns.
  8. Is the BAV102-GS18 suitable for automotive applications?
    Yes, the BAV102-GS18 is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.
  9. What is the thermal resistance junction to ambient air for the BAV102-GS18?
    The thermal resistance junction to ambient air (RthJA) is 500 K/W on a PC board 50 mm x 50 mm x 1.6 mm.
  10. What is the storage temperature range for the BAV102-GS18?
    The storage temperature range (Tstg) is -65 to +175 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 150 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:SOD-80 MiniMELF
Operating Temperature - Junction:175°C (Max)
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Similar Products

Part Number BAV102-GS18 BAV103-GS18 BAV202-GS18 BAV100-GS18 BAV101-GS18 BAV102-GS08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 150 V 200 V 150 V 50 V 100 V 150 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1 V @ 100 mA 1 V @ 100 mA 1 V @ 100 mA 1 V @ 100 mA 1 V @ 100 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 150 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 50 V 100 nA @ 100 V 100 nA @ 150 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 SOD-80 Variant DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80
Supplier Device Package SOD-80 MiniMELF SOD-80 MiniMELF SOD-80 QuadroMELF SOD-80 MiniMELF SOD-80 MiniMELF SOD-80 MiniMELF
Operating Temperature - Junction 175°C (Max) 175°C (Max) 150°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

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