BAS21-E3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAS21-E3-18

Manufacturer No:
BAS21-E3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21-E3-18 is a high-voltage, small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAS21 series, known for its high reverse voltage ratings and fast switching capabilities. It is packaged in the SOT-23-3 case, making it suitable for surface mount applications. The BAS21-E3-18 is designed to meet the demands of various electronic circuits requiring reliable and efficient switching performance.

Key Specifications

Product Attribute Attribute Value
Manufacturer Vishay General Semiconductor - Diodes Division
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max) 200 V
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 100 nA @ 200 V
Current - Average Rectified (Io) 200 mA
Capacitance @ Vr, F 5 pF @ 0 V, 1 MHz
Reverse Recovery Time (trr) 50 ns
Operating Temperature - Junction -55°C ~ 150°C
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Silicon Epitaxial Planar Diode: Ensures high reliability and performance.
  • Fast Switching Diode: Especially suited for automatic insertion and high-speed switching applications.
  • High Reverse Voltage Rating: Up to 200 V, making it suitable for high-voltage circuits.
  • Low Forward Voltage Drop: Maximum of 1.25 V at 200 mA, reducing power losses.
  • Low Reverse Leakage Current: 100 nA at 200 V, minimizing current leakage.
  • RoHS Compliant: Meets environmental standards for lead-free and hazardous substance-free manufacturing.
  • AEC-Q101 Qualified (for HE3 versions): Suitable for automotive applications requiring high reliability and durability.

Applications

  • General Purpose Switching: Ideal for various switching applications in electronic circuits.
  • Automotive Electronics: AEC-Q101 qualified versions (BAS21-HE3-18) are suitable for automotive systems requiring high reliability.
  • Consumer Electronics: Used in a wide range of consumer electronic devices due to its high performance and reliability.
  • Industrial Control Systems: Suitable for industrial control and automation systems where high voltage and fast switching are required.

Q & A

  1. What is the maximum reverse voltage rating of the BAS21-E3-18 diode?

    The maximum reverse voltage rating is 200 V.

  2. What is the typical forward voltage drop at 200 mA for the BAS21-E3-18?

    The typical forward voltage drop at 200 mA is 1.25 V.

  3. What is the reverse recovery time of the BAS21-E3-18 diode?

    The reverse recovery time is 50 ns.

  4. Is the BAS21-E3-18 diode RoHS compliant?
  5. What is the maximum average rectified current for the BAS21-E3-18?

    The maximum average rectified current is 200 mA.

  6. What is the operating temperature range for the BAS21-E3-18?

    The operating temperature range is -55°C to 150°C.

  7. Is the BAS21-E3-18 suitable for automotive applications?

    The BAS21-HE3-18 version is AEC-Q101 qualified and suitable for automotive applications.

  8. What is the package type of the BAS21-E3-18 diode?

    The package type is SOT-23-3.

  9. What is the moisture sensitivity level (MSL) of the BAS21-E3-18?

    The MSL is 1 (Unlimited).

  10. What is the typical capacitance of the BAS21-E3-18 at 0 V and 1 MHz?

    The typical capacitance is 5 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.25
2,359

Please send RFQ , we will respond immediately.

Same Series
BAS21-HE3-08
BAS21-HE3-08
DIODE GEN PURP 200V 200MA SOT23
BAS20-E3-18
BAS20-E3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-E3-08
BAS19-E3-08
DIODE GEN PURP 100V 200MA SOT23
BAS21-HE3-18
BAS21-HE3-18
DIODE GEN PURP 200V 200MA SOT23
BAS21-E3-08
BAS21-E3-08
DIODE GEN PURP 200V 200MA SOT23
BAS19-E3-18
BAS19-E3-18
DIODE GEN PURP 100V 200MA SOT23
BAS20-E3-08
BAS20-E3-08
DIODE GEN PURP 150V 200MA SOT23
BAS19-HE3-18
BAS19-HE3-18
DIODE GEN PURP 100V 200MA SOT23
BAS20-HE3-18
BAS20-HE3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-HE3-08
BAS19-HE3-08
DIODE GEN PURP 100V 200MA SOT23
BAS20-HE3-08
BAS20-HE3-08
DIODE GEN PURP 150V 200MA SOT23

Similar Products

Part Number BAS21-E3-18 BAS21-HE3-18 BAS21-G3-18 BAS20-E3-18 BAS21-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V 150 V 200 V
Current - Average Rectified (Io) 200mA 200mA 200mA 200mA 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

SM6T6V8CA-E3/5B
SM6T6V8CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM6T18CA-E3/52
SM6T18CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T33CA-M3/52
SM6T33CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM15T200A-M3/57T
SM15T200A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM15T6V8CAHM3_A/I
SM15T6V8CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
SM15T68CAHM3/H
SM15T68CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T12AHM3/H
SM6T12AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
BAV70-E3-18
BAV70-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 125MA SOT23
MUR420-M3/54
MUR420-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 4A DO201AD
1N4004GPHE3/73
1N4004GPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
MURS260HE3/52T
MURS260HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BZX84C16-E3-08
BZX84C16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3