BAS21-HE3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS21-HE3-08

Manufacturer No:
BAS21-HE3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21-HE3-08 is a high-voltage, small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAS21 series, known for its high reliability and performance in various electronic applications. The BAS21-HE3-08 is particularly suited for use in circuits requiring fast switching times and high voltage handling capabilities.

Vishay General Semiconductor, with its rich history dating back to the founding of General Instrument in 1960, has established itself as a leader in the discrete semiconductor market. The company's products, including the BAS21 series, are widely used in consumer electronics, automotive systems, telecommunications, and other industrial applications.

Key Specifications

Product Attribute Attribute Value
Manufacturer Vishay General Semiconductor - Diodes Division
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max) 200 V
Technology Standard
Package / Case TO-236-3, SC-59, SOT-23-3
Package Tape & Reel (TR)
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V
Current - Average Rectified (Io) 200mA
Capacitance @ Vr, F 5pF @ 0V, 1MHz
Mounting Type Surface Mount
Operating Temperature - Junction -55°C ~ 150°C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected

Key Features

  • High Voltage Handling: The BAS21-HE3-08 can handle a maximum DC reverse voltage of 200 V, making it suitable for high-voltage applications.
  • Fast Switching: With a reverse recovery time of 50 ns, this diode is ideal for fast switching applications.
  • Low Forward Voltage Drop: The diode has a maximum forward voltage drop of 1.25 V at 200 mA, which is efficient for many circuit designs.
  • Low Leakage Current: It features a low reverse leakage current of 100 nA at 200 V, reducing power loss in standby conditions.
  • Compact Package: Available in SOT-23-3, SC-59, and TO-236-3 packages, this diode is suitable for surface mount applications where space is limited.
  • AEC-Q101 Qualified: The BAS21-HE3-08 is AEC-Q101 qualified, making it reliable for use in automotive systems.
  • RoHS Compliant: The diode is lead-free and ROHS3 compliant, ensuring environmental sustainability.

Applications

  • Automotive Systems: Used in various automotive applications such as power conversion for LED headlights, dashboard displays, and electronic control units (ECUs).
  • Consumer Electronics: Suitable for use in consumer electronics where high voltage and fast switching are required.
  • Telecommunications Equipment: Employed in telecommunications equipment for signal switching and voltage regulation.
  • Industrial and Commercial Applications: Used in industrial and commercial applications requiring reliable and efficient diode performance.
  • Circuit Protection: Can be used for circuit protection due to its high voltage handling and fast recovery characteristics.

Q & A

  1. What is the maximum DC reverse voltage of the BAS21-HE3-08?

    The maximum DC reverse voltage is 200 V.

  2. What is the reverse recovery time of the BAS21-HE3-08?

    The reverse recovery time is 50 ns.

  3. What is the maximum forward voltage drop at 200 mA for the BAS21-HE3-08?

    The maximum forward voltage drop at 200 mA is 1.25 V.

  4. Is the BAS21-HE3-08 AEC-Q101 qualified?

    Yes, the BAS21-HE3-08 is AEC-Q101 qualified.

  5. What is the operating temperature range for the BAS21-HE3-08?

    The operating temperature range is -55°C to 150°C.

  6. What is the package type of the BAS21-HE3-08?

    The package types include TO-236-3, SC-59, and SOT-23-3.

  7. Is the BAS21-HE3-08 RoHS compliant?

    Yes, the BAS21-HE3-08 is ROHS3 compliant.

  8. What is the average rectified current (Io) of the BAS21-HE3-08?

    The average rectified current (Io) is 200 mA.

  9. What is the capacitance at 0 V and 1 MHz for the BAS21-HE3-08?

    The capacitance at 0 V and 1 MHz is 5 pF.

  10. What is the mounting type of the BAS21-HE3-08?

    The mounting type is surface mount.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.25
495

Please send RFQ , we will respond immediately.

Same Series
BAS21-HE3-08
BAS21-HE3-08
DIODE GEN PURP 200V 200MA SOT23
BAS20-E3-18
BAS20-E3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-E3-08
BAS19-E3-08
DIODE GEN PURP 100V 200MA SOT23
BAS21-HE3-18
BAS21-HE3-18
DIODE GEN PURP 200V 200MA SOT23
BAS21-E3-08
BAS21-E3-08
DIODE GEN PURP 200V 200MA SOT23
BAS19-E3-18
BAS19-E3-18
DIODE GEN PURP 100V 200MA SOT23
BAS20-E3-08
BAS20-E3-08
DIODE GEN PURP 150V 200MA SOT23
BAS19-HE3-18
BAS19-HE3-18
DIODE GEN PURP 100V 200MA SOT23
BAS20-HE3-18
BAS20-HE3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-HE3-08
BAS19-HE3-08
DIODE GEN PURP 100V 200MA SOT23
BAS20-HE3-08
BAS20-HE3-08
DIODE GEN PURP 150V 200MA SOT23

Similar Products

Part Number BAS21-HE3-08 BAS21-HE3-18 BAS20-HE3-08 BAS21-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 150 V 200 V
Current - Average Rectified (Io) 200mA 200mA 200mA 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL

Related Product By Brand

SM6T12CA-M3/5B
SM6T12CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM15T12AHE3_A/H
SM15T12AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
MBRB10100CT-E3/8W
MBRB10100CT-E3/8W
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO263
BYQ28EB-200HE3_A/P
BYQ28EB-200HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
BAS16D-HE3-08
BAS16D-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
BAV102-GS18
BAV102-GS18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 250MA SOD80
BAT42W-G3-08
BAT42W-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
BZX84C22-E3-18
BZX84C22-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX84B4V3-E3-18
BZX84B4V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3
BZX84B18-HE3-08
BZX84B18-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX384B10-G3-18
BZX384B10-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 200MW SOD323