BAS21-HE3-08
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Vishay General Semiconductor - Diodes Division BAS21-HE3-08

Manufacturer No:
BAS21-HE3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21-HE3-08 is a high-voltage, small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAS21 series, known for its high reliability and performance in various electronic applications. The BAS21-HE3-08 is particularly suited for use in circuits requiring fast switching times and high voltage handling capabilities.

Vishay General Semiconductor, with its rich history dating back to the founding of General Instrument in 1960, has established itself as a leader in the discrete semiconductor market. The company's products, including the BAS21 series, are widely used in consumer electronics, automotive systems, telecommunications, and other industrial applications.

Key Specifications

Product Attribute Attribute Value
Manufacturer Vishay General Semiconductor - Diodes Division
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max) 200 V
Technology Standard
Package / Case TO-236-3, SC-59, SOT-23-3
Package Tape & Reel (TR)
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V
Current - Average Rectified (Io) 200mA
Capacitance @ Vr, F 5pF @ 0V, 1MHz
Mounting Type Surface Mount
Operating Temperature - Junction -55°C ~ 150°C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected

Key Features

  • High Voltage Handling: The BAS21-HE3-08 can handle a maximum DC reverse voltage of 200 V, making it suitable for high-voltage applications.
  • Fast Switching: With a reverse recovery time of 50 ns, this diode is ideal for fast switching applications.
  • Low Forward Voltage Drop: The diode has a maximum forward voltage drop of 1.25 V at 200 mA, which is efficient for many circuit designs.
  • Low Leakage Current: It features a low reverse leakage current of 100 nA at 200 V, reducing power loss in standby conditions.
  • Compact Package: Available in SOT-23-3, SC-59, and TO-236-3 packages, this diode is suitable for surface mount applications where space is limited.
  • AEC-Q101 Qualified: The BAS21-HE3-08 is AEC-Q101 qualified, making it reliable for use in automotive systems.
  • RoHS Compliant: The diode is lead-free and ROHS3 compliant, ensuring environmental sustainability.

Applications

  • Automotive Systems: Used in various automotive applications such as power conversion for LED headlights, dashboard displays, and electronic control units (ECUs).
  • Consumer Electronics: Suitable for use in consumer electronics where high voltage and fast switching are required.
  • Telecommunications Equipment: Employed in telecommunications equipment for signal switching and voltage regulation.
  • Industrial and Commercial Applications: Used in industrial and commercial applications requiring reliable and efficient diode performance.
  • Circuit Protection: Can be used for circuit protection due to its high voltage handling and fast recovery characteristics.

Q & A

  1. What is the maximum DC reverse voltage of the BAS21-HE3-08?

    The maximum DC reverse voltage is 200 V.

  2. What is the reverse recovery time of the BAS21-HE3-08?

    The reverse recovery time is 50 ns.

  3. What is the maximum forward voltage drop at 200 mA for the BAS21-HE3-08?

    The maximum forward voltage drop at 200 mA is 1.25 V.

  4. Is the BAS21-HE3-08 AEC-Q101 qualified?

    Yes, the BAS21-HE3-08 is AEC-Q101 qualified.

  5. What is the operating temperature range for the BAS21-HE3-08?

    The operating temperature range is -55°C to 150°C.

  6. What is the package type of the BAS21-HE3-08?

    The package types include TO-236-3, SC-59, and SOT-23-3.

  7. Is the BAS21-HE3-08 RoHS compliant?

    Yes, the BAS21-HE3-08 is ROHS3 compliant.

  8. What is the average rectified current (Io) of the BAS21-HE3-08?

    The average rectified current (Io) is 200 mA.

  9. What is the capacitance at 0 V and 1 MHz for the BAS21-HE3-08?

    The capacitance at 0 V and 1 MHz is 5 pF.

  10. What is the mounting type of the BAS21-HE3-08?

    The mounting type is surface mount.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
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Same Series
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Similar Products

Part Number BAS21-HE3-08 BAS21-HE3-18 BAS20-HE3-08 BAS21-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 150 V 200 V
Current - Average Rectified (Io) 200mA 200mA 200mA 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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