BAS21-HE3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS21-HE3-08

Manufacturer No:
BAS21-HE3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21-HE3-08 is a high-voltage, small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAS21 series, known for its high reliability and performance in various electronic applications. The BAS21-HE3-08 is particularly suited for use in circuits requiring fast switching times and high voltage handling capabilities.

Vishay General Semiconductor, with its rich history dating back to the founding of General Instrument in 1960, has established itself as a leader in the discrete semiconductor market. The company's products, including the BAS21 series, are widely used in consumer electronics, automotive systems, telecommunications, and other industrial applications.

Key Specifications

Product Attribute Attribute Value
Manufacturer Vishay General Semiconductor - Diodes Division
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max) 200 V
Technology Standard
Package / Case TO-236-3, SC-59, SOT-23-3
Package Tape & Reel (TR)
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V
Current - Average Rectified (Io) 200mA
Capacitance @ Vr, F 5pF @ 0V, 1MHz
Mounting Type Surface Mount
Operating Temperature - Junction -55°C ~ 150°C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected

Key Features

  • High Voltage Handling: The BAS21-HE3-08 can handle a maximum DC reverse voltage of 200 V, making it suitable for high-voltage applications.
  • Fast Switching: With a reverse recovery time of 50 ns, this diode is ideal for fast switching applications.
  • Low Forward Voltage Drop: The diode has a maximum forward voltage drop of 1.25 V at 200 mA, which is efficient for many circuit designs.
  • Low Leakage Current: It features a low reverse leakage current of 100 nA at 200 V, reducing power loss in standby conditions.
  • Compact Package: Available in SOT-23-3, SC-59, and TO-236-3 packages, this diode is suitable for surface mount applications where space is limited.
  • AEC-Q101 Qualified: The BAS21-HE3-08 is AEC-Q101 qualified, making it reliable for use in automotive systems.
  • RoHS Compliant: The diode is lead-free and ROHS3 compliant, ensuring environmental sustainability.

Applications

  • Automotive Systems: Used in various automotive applications such as power conversion for LED headlights, dashboard displays, and electronic control units (ECUs).
  • Consumer Electronics: Suitable for use in consumer electronics where high voltage and fast switching are required.
  • Telecommunications Equipment: Employed in telecommunications equipment for signal switching and voltage regulation.
  • Industrial and Commercial Applications: Used in industrial and commercial applications requiring reliable and efficient diode performance.
  • Circuit Protection: Can be used for circuit protection due to its high voltage handling and fast recovery characteristics.

Q & A

  1. What is the maximum DC reverse voltage of the BAS21-HE3-08?

    The maximum DC reverse voltage is 200 V.

  2. What is the reverse recovery time of the BAS21-HE3-08?

    The reverse recovery time is 50 ns.

  3. What is the maximum forward voltage drop at 200 mA for the BAS21-HE3-08?

    The maximum forward voltage drop at 200 mA is 1.25 V.

  4. Is the BAS21-HE3-08 AEC-Q101 qualified?

    Yes, the BAS21-HE3-08 is AEC-Q101 qualified.

  5. What is the operating temperature range for the BAS21-HE3-08?

    The operating temperature range is -55°C to 150°C.

  6. What is the package type of the BAS21-HE3-08?

    The package types include TO-236-3, SC-59, and SOT-23-3.

  7. Is the BAS21-HE3-08 RoHS compliant?

    Yes, the BAS21-HE3-08 is ROHS3 compliant.

  8. What is the average rectified current (Io) of the BAS21-HE3-08?

    The average rectified current (Io) is 200 mA.

  9. What is the capacitance at 0 V and 1 MHz for the BAS21-HE3-08?

    The capacitance at 0 V and 1 MHz is 5 pF.

  10. What is the mounting type of the BAS21-HE3-08?

    The mounting type is surface mount.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.25
495

Please send RFQ , we will respond immediately.

Same Series
BAS21-HE3-08
BAS21-HE3-08
DIODE GEN PURP 200V 200MA SOT23
BAS20-E3-18
BAS20-E3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-E3-08
BAS19-E3-08
DIODE GEN PURP 100V 200MA SOT23
BAS21-HE3-18
BAS21-HE3-18
DIODE GEN PURP 200V 200MA SOT23
BAS21-E3-08
BAS21-E3-08
DIODE GEN PURP 200V 200MA SOT23
BAS19-E3-18
BAS19-E3-18
DIODE GEN PURP 100V 200MA SOT23
BAS20-E3-08
BAS20-E3-08
DIODE GEN PURP 150V 200MA SOT23
BAS19-HE3-18
BAS19-HE3-18
DIODE GEN PURP 100V 200MA SOT23
BAS20-HE3-18
BAS20-HE3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-HE3-08
BAS19-HE3-08
DIODE GEN PURP 100V 200MA SOT23
BAS20-HE3-08
BAS20-HE3-08
DIODE GEN PURP 150V 200MA SOT23

Similar Products

Part Number BAS21-HE3-08 BAS21-HE3-18 BAS20-HE3-08 BAS21-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 150 V 200 V
Current - Average Rectified (Io) 200mA 200mA 200mA 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL

Related Product By Brand

SM15T68A-M3/57T
SM15T68A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM15T24AHE3/9AT
SM15T24AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
SM15T36CAHE3/9AT
SM15T36CAHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM15T100AHE3/57T
SM15T100AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM15T6V8AHM3/H
SM15T6V8AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
SM6T68CAHM3/I
SM6T68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
MUR460-E3/73
MUR460-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 4A DO201AD
BZX55C8V2-TAP
BZX55C8V2-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 500MW DO35
BZX55C15-TR
BZX55C15-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 500MW DO35
BZX84C39-E3-08
BZX84C39-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX384C16-E3-18
BZX384C16-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 200MW SOD323
BZX84C36-G3-08
BZX84C36-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 36V 300MW SOT23-3