BAS21-E3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS21-E3-08

Manufacturer No:
BAS21-E3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21-E3-08 is a small-signal switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAS19, BAS20, and BAS21 series, known for their fast switching capabilities and suitability for various electronic applications. The BAS21-E3-08 is specifically designed with a maximum reverse voltage (VR) of 200 V, making it ideal for high-voltage applications. It is packaged in the SOT-23 case, which is particularly suited for automatic insertion and offers excellent thermal and electrical performance.

Key Specifications

ParameterValueUnit
Maximum Reverse Voltage (VR)200V
Maximum Average Forward Rectified Current (IF(AV))250mA
Maximum DC Forward Current (IF)350mA
Repetitive Peak Forward Current (IFRM)625mA
Non-Repetitive Peak Forward Surge Current (IFSM)2.5 A (t = 1 s)A
Forward Voltage (VF) at IF = 100 mA1.0V
Reverse Recovery Time (trr)50 nsns
Diode Capacitance (CD) at VR = 0, f = 1 MHz5pF
Thermal Resistance Junction to Ambient Air (RthJA)420K/W
Operating Temperature Range (Top)-55 to +150°C
Storage Temperature Range (Tstg)-65 to +150°C

Key Features

  • Fast Switching Capability: The BAS21-E3-08 is designed for fast switching applications, making it suitable for high-frequency operations.
  • High Voltage Rating: With a maximum reverse voltage of 200 V, this diode is ideal for applications requiring high voltage handling.
  • Compact Packaging: The SOT-23 package is optimized for automatic insertion and offers good thermal and electrical performance.
  • AEC-Q101 Qualified: Available in automotive-grade versions, ensuring reliability and performance in demanding automotive environments.
  • RoHS and Lead-Free Compliance: The diode is RoHS-compliant and totally lead-free, adhering to environmental regulations.

Applications

The BAS21-E3-08 is versatile and can be used in a variety of applications, including:

  • Automotive Systems: Suitable for use in automotive electronics such as power conversion for LED headlights, dashboard displays, and electronic control units (ECUs).
  • Consumer Electronics: Used in devices requiring fast switching and high voltage handling, such as power supplies and signal processing circuits.
  • Telecommunications Equipment: Ideal for high-frequency switching applications in telecommunications devices.
  • Industrial and Commercial Applications: Can be used in industrial control systems, computing devices, and other commercial electronics.

Q & A

  1. What is the maximum reverse voltage of the BAS21-E3-08 diode?
    The maximum reverse voltage (VR) of the BAS21-E3-08 diode is 200 V.
  2. What is the package type of the BAS21-E3-08 diode?
    The BAS21-E3-08 diode is packaged in the SOT-23 case.
  3. Is the BAS21-E3-08 diode AEC-Q101 qualified?
    Yes, the BAS21-E3-08 diode is available in AEC-Q101 qualified versions, especially suited for automotive applications.
  4. What is the maximum average forward rectified current (IF(AV)) of the BAS21-E3-08 diode?
    The maximum average forward rectified current (IF(AV)) is 250 mA.
  5. What is the thermal resistance junction to ambient air (RthJA) of the BAS21-E3-08 diode?
    The thermal resistance junction to ambient air (RthJA) is 420 K/W.
  6. Is the BAS21-E3-08 diode RoHS-compliant and lead-free?
    Yes, the BAS21-E3-08 diode is RoHS-compliant and totally lead-free.
  7. What is the reverse recovery time (trr) of the BAS21-E3-08 diode?
    The reverse recovery time (trr) is 50 ns.
  8. What is the operating temperature range of the BAS21-E3-08 diode?
    The operating temperature range is -55 to +150 °C.
  9. What is the storage temperature range of the BAS21-E3-08 diode?
    The storage temperature range is -65 to +150 °C.
  10. What are some common applications of the BAS21-E3-08 diode?
    The BAS21-E3-08 diode is commonly used in automotive systems, consumer electronics, telecommunications equipment, and industrial and commercial applications.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.25
3,285

Please send RFQ , we will respond immediately.

Same Series
BAS21-HE3-08
BAS21-HE3-08
DIODE GEN PURP 200V 200MA SOT23
BAS20-E3-18
BAS20-E3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-E3-08
BAS19-E3-08
DIODE GEN PURP 100V 200MA SOT23
BAS21-HE3-18
BAS21-HE3-18
DIODE GEN PURP 200V 200MA SOT23
BAS21-E3-08
BAS21-E3-08
DIODE GEN PURP 200V 200MA SOT23
BAS19-E3-18
BAS19-E3-18
DIODE GEN PURP 100V 200MA SOT23
BAS20-E3-08
BAS20-E3-08
DIODE GEN PURP 150V 200MA SOT23
BAS19-HE3-18
BAS19-HE3-18
DIODE GEN PURP 100V 200MA SOT23
BAS20-HE3-18
BAS20-HE3-18
DIODE GEN PURP 150V 200MA SOT23
BAS19-HE3-08
BAS19-HE3-08
DIODE GEN PURP 100V 200MA SOT23
BAS20-HE3-08
BAS20-HE3-08
DIODE GEN PURP 150V 200MA SOT23

Similar Products

Part Number BAS21-E3-08 BAS21-HE3-08 BAS21-E3-18 BAS21-G3-08 BAS20-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V 200 V 150 V
Current - Average Rectified (Io) 200mA (DC) 200mA 200mA 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 150 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

SM15T36CA-E3/57T
SM15T36CA-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM6T18CAHE3_A/I
SM6T18CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM15T12A-M3/9AT
SM15T12A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SMBJ5.0CAHM3/I
SMBJ5.0CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
1N4004GPE-E3/54
1N4004GPE-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
MBR10100-E3/4W
MBR10100-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
MUR160-E3/54
MUR160-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC
BZX384C15-G3-08
BZX384C15-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323
BZX84C24-E3-18
BZX84C24-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 300MW SOT23-3
BZX84C75-E3-18
BZX84C75-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 300MW SOT23-3
BZX384C6V8-HE3-18
BZX384C6V8-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323
BZX84C36-G3-08
BZX84C36-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 36V 300MW SOT23-3