BAS40-06-HE3-18
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Vishay General Semiconductor - Diodes Division BAS40-06-HE3-18

Manufacturer No:
BAS40-06-HE3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 40V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40-06-HE3-18 is a small signal Schottky diode array produced by Vishay General Semiconductor - Diodes Division. This component is part of the BAS40 series, which is known for its low turn-on voltage and fast switching capabilities. The BAS40-06-HE3-18 is specifically configured as a dual diode array with a common anode configuration, making it suitable for various high-frequency and low-voltage applications.

Key Specifications

Parameter Test Condition Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM = VRWM = VR VRRM 40 V
Forward Continuous Current - IF 200 mA
Surge Forward Current (tp < 1 s) - IFSM 600 mA
Power Dissipation - Ptot 200 mW
Thermal Resistance Junction to Ambient Air - RthJA 460 K/W
Junction Temperature - Tj 125 °C
Storage Temperature Range - Tstg -65 to +150 °C
Operating Temperature Range - Top -55 to +125 °C
Forward Voltage (IF = 1 mA) - VF 380 mV mV
Reverse Breakdown Voltage (IR = 10 μA) - V(BR) 40 V
Leakage Current (VR = 30 V) - IR 20 - 100 nA
Diode Capacitance (VR = 0, f = 1 MHz) - CD 2.5 - 5 pF
Reverse Recovery Time (IF = IR = 10 mA, iR = 1 mA, RL = 100 Ω) - trr 5 ns

Key Features

  • Very low turn-on voltage and fast switching capabilities.
  • Protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.
  • AEC-Q101 qualified for automotive applications.
  • RoHS-compliant.
  • Available in various configurations: single diode, dual diodes in series, dual diodes with common cathode, and dual diodes with common anode.
  • Small SOT-23 package, weighing approximately 9.2 mg.
  • High thermal stability with a junction temperature up to 125°C.

Applications

  • High-frequency switching applications.
  • Low-voltage power supplies.
  • Automotive systems (due to AEC-Q101 qualification).
  • Consumer electronics requiring fast switching and low power loss.
  • Telecommunication equipment.
  • Industrial control systems.

Q & A

  1. What is the maximum repetitive peak reverse voltage for the BAS40-06-HE3-18?

    The maximum repetitive peak reverse voltage is 40 V.

  2. What is the forward continuous current rating for this diode?

    The forward continuous current rating is 200 mA.

  3. What is the thermal resistance junction to ambient air for the BAS40-06-HE3-18?

    The thermal resistance junction to ambient air is approximately 460 K/W.

  4. Is the BAS40-06-HE3-18 RoHS-compliant?
  5. What is the junction temperature range for this diode?

    The junction temperature range is up to 125°C.

  6. What are the typical forward voltage and reverse recovery time for this diode?

    The typical forward voltage at 1 mA is 380 mV, and the reverse recovery time is 5 ns.

  7. What are the storage and operating temperature ranges for the BAS40-06-HE3-18?

    The storage temperature range is -65 to +150°C, and the operating temperature range is -55 to +125°C.

  8. Is the BAS40-06-HE3-18 suitable for automotive applications?
  9. What is the package type and weight of the BAS40-06-HE3-18?

    The package type is SOT-23, and the weight is approximately 9.2 mg.

  10. What are some common applications for the BAS40-06-HE3-18?

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io) (per Diode):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:100 nA @ 30 V
Operating Temperature - Junction:125°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number BAS40-06-HE3-18 BAS40-04-HE3-18 BAS40-05-HE3-18 BAS40-06-E3-18 BAS40-06-HE3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Configuration 1 Pair Common Anode 1 Pair Series Connection 1 Pair Common Cathode 1 Pair Common Anode 1 Pair Common Anode
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V 40 V 40 V 40 V
Current - Average Rectified (Io) (per Diode) 200mA 200mA 200mA 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA 1 V @ 40 mA 1 V @ 40 mA 1 V @ 40 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns 5 ns 5 ns 5 ns
Current - Reverse Leakage @ Vr 100 nA @ 30 V 100 nA @ 30 V 100 nA @ 30 V 100 nA @ 30 V 100 nA @ 30 V
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3

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