BAW 56W H6327
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Infineon Technologies BAW 56W H6327

Manufacturer No:
BAW 56W H6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 80V 200MA SOT323
Delivery:
Payment:
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Product Introduction

Overview

The BAW 56W H6327 is a silicon switching diode array produced by Infineon Technologies. This component is designed for high-speed switching applications and features a common anode configuration. It is available in the SOT323 package and is RoHS compliant, making it suitable for a wide range of electronic devices. The diode array is qualified according to AEC Q101, ensuring its reliability and performance in automotive and industrial applications.

Key Specifications

ParameterSymbolValueUnit
Diode Reverse VoltageVR80V
Peak Reverse VoltageVRM85V
Forward CurrentIF200mA
Non-repetitive Peak Surge Forward Current (t = 1 µs)IFSM4.5A
Total Power Dissipation (TS ≤ 103°C)Ptot250mW
Junction TemperatureTj150°C
Storage TemperatureTstg-65 to 150°C
Thermal Resistance (Junction - Soldering Point)RthJS190K/W

Key Features

  • High-speed switching capability
  • Common anode configuration
  • Available in SOT323 package
  • RoHS compliant
  • Qualified according to AEC Q101 for automotive and industrial applications
  • Low forward voltage drop
  • High reverse voltage rating of 80V
  • High peak surge forward current capability

Applications

The BAW 56W H6327 is suitable for various high-speed switching applications, including:

  • Automotive systems
  • Industrial control systems
  • Power supplies and DC-DC converters
  • Signal processing and communication equipment
  • General-purpose switching circuits

Q & A

  1. What is the maximum reverse voltage rating of the BAW 56W H6327?
    The maximum reverse voltage rating is 80V.
  2. What is the forward current rating of the BAW 56W H6327?
    The forward current rating is 200 mA.
  3. What is the peak surge forward current capability of the BAW 56W H6327?
    The peak surge forward current capability is 4.5 A for a pulse duration of 1 µs.
  4. What is the thermal resistance of the BAW 56W H6327?
    The thermal resistance (junction - soldering point) is 190 K/W.
  5. Is the BAW 56W H6327 RoHS compliant?
    Yes, the BAW 56W H6327 is RoHS compliant.
  6. What package type is the BAW 56W H6327 available in?
    The BAW 56W H6327 is available in the SOT323 package.
  7. What are the storage temperature limits for the BAW 56W H6327?
    The storage temperature limits are -65°C to 150°C.
  8. What is the junction temperature limit for the BAW 56W H6327?
    The junction temperature limit is 150°C.
  9. Is the BAW 56W H6327 qualified for automotive applications?
    Yes, it is qualified according to AEC Q101 for automotive and industrial applications.
  10. What are some common applications of the BAW 56W H6327?
    Common applications include automotive systems, industrial control systems, power supplies, DC-DC converters, signal processing, and communication equipment.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:150 nA @ 70 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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