BAW 56T E6327
  • Share:

Infineon Technologies BAW 56T E6327

Manufacturer No:
BAW 56T E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 80V 200MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAW 56T E6327 is a diode array component manufactured by Infineon Technologies. This device is designed for high-speed switching applications and features a common anode configuration. It is part of the BAW56 series, known for its reliability and performance in various electronic circuits. The BAW 56T E6327 is particularly suited for applications requiring low forward voltage drop and high switching speeds.

Key Specifications

Parameter Symbol Value Unit
Diode Reverse Voltage VR 80 V
Peak Reverse Voltage VRM 85 V
Forward Current (per Diode) IF 200 mA
Forward Voltage (Max) @ 150mA Vf 1.25 V
Reverse Leakage Current @ 70V IR 150nA
Reverse Recovery Time trr 4ns
Junction Temperature Tj 150°C
Package / Case SC-75, SOT-416
Mounting Type Surface Mount
Configuration 1 Pair Common Anode

Key Features

  • High-Speed Switching: Designed for high-speed switching applications with a reverse recovery time of 4ns.
  • Low Forward Voltage Drop: Maximum forward voltage of 1.25V at 150mA, making it efficient for low-voltage applications.
  • Common Anode Configuration: Features a 1 pair common anode configuration, suitable for various circuit designs.
  • Surface Mount Package: Available in SC-75 and SOT-416 packages, facilitating easy integration into surface mount designs.
  • Pb-free and RoHS Compliant: Ensures environmental compliance and safety in use.
  • High Reliability: Qualified according to AEC Q101 standards, ensuring reliability in automotive and industrial applications.

Applications

  • Automotive Electronics: Suitable for use in automotive systems due to its high reliability and compliance with automotive standards.
  • Industrial Control Systems: Used in industrial control circuits where high-speed switching and low forward voltage drop are critical.
  • Consumer Electronics: Applicable in various consumer electronic devices requiring efficient and reliable diode arrays.
  • Telecommunication Equipment: Employed in telecommunication systems for their high-speed switching capabilities.

Q & A

  1. What is the maximum reverse voltage of the BAW 56T E6327?

    The maximum reverse voltage (VR) is 80V, with a peak reverse voltage (VRM) of 85V.

  2. What is the forward current rating of the BAW 56T E6327?

    The forward current (IF) rating is 200mA per diode.

  3. What is the forward voltage drop at 150mA for the BAW 56T E6327?

    The maximum forward voltage (Vf) at 150mA is 1.25V.

  4. What is the reverse recovery time of the BAW 56T E6327?

    The reverse recovery time (trr) is 4ns).

  5. What is the junction temperature rating of the BAW 56T E6327?

    The junction temperature (Tj) rating is up to 150°C).

  6. What package types are available for the BAW 56T E6327?

    The BAW 56T E6327 is available in SC-75 and SOT-416 packages).

  7. Is the BAW 56T E6327 Pb-free and RoHS compliant?

    Yes, the BAW 56T E6327 is Pb-free and RoHS compliant).

  8. What is the configuration of the diodes in the BAW 56T E6327?

    The diodes are configured as 1 pair common anode).

  9. What are some typical applications of the BAW 56T E6327?

    Typical applications include automotive electronics, industrial control systems, consumer electronics, and telecommunication equipment).

  10. Is the BAW 56T E6327 qualified according to any specific standards?

    Yes, it is qualified according to AEC Q101 standards).

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:150 nA @ 70 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:PG-SC-75
0 Remaining View Similar

In Stock

-
177

Please send RFQ , we will respond immediately.

Same Series
BAW56SH6327XTSA1
BAW56SH6327XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW56UE6327HTSA1
BAW56UE6327HTSA1
DIODE ARRAY GP 80V 200MA SC74-6
BAW56UE6433HTMA1
BAW56UE6433HTMA1
DIODE ARRAY GP 80V 200MA SC74-6
BAW56E6327
BAW56E6327
DIODE ARRAY GP 80V 200MA SOT23
BAW 56 E6433
BAW 56 E6433
DIODE ARRAY GP 80V 200MA SOT23
BAW56SE6327BTSA1
BAW56SE6327BTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW 56T E6327
BAW 56T E6327
DIODE ARRAY GP 80V 200MA SC75
BAW56WE6327HTSA1
BAW56WE6327HTSA1
DIODE ARRAY GP 80V 200MA SOT323
BAW 56 B5003
BAW 56 B5003
DIODE ARRAY GP 80V 200MA SOT23
BAW56SH6727XTSA1
BAW56SH6727XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAW 56W H6327
BAW 56W H6327
DIODE ARRAY GP 80V 200MA SOT323

Related Product By Categories

PMEG4010CPA,115
PMEG4010CPA,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V 3HUSON
BAS56,235
BAS56,235
Nexperia USA Inc.
DIODE ARRAY GP 60V 200MA SOT143B
BAV99 RFG
BAV99 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
STTH3003CW
STTH3003CW
STMicroelectronics
DIODE ARRAY GP 300V 15A TO247-3
STPS10170CB-TR
STPS10170CB-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V DPAK
STPS30L45CG-TR
STPS30L45CG-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 45V D2PAK
BAV99UE6327
BAV99UE6327
Infineon Technologies
RECTIFIER DIODE
BAT54CQ-13
BAT54CQ-13
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 10K
1N4148UBCCC
1N4148UBCCC
Microchip Technology
SIGNAL OR COMPUTER DIODE
MBRD660CTTR
MBRD660CTTR
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 60V 3A DPAK
BAS 40-07 B6327
BAS 40-07 B6327
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT143
BAV99W/DG/B3F
BAV99W/DG/B3F
Nexperia USA Inc.
DIODE ARRAY GP 100V 150MA SC70

Related Product By Brand

BAS40-05WH6327
BAS40-05WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS7004WE6327HTSA1
BAS7004WE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BC857SH6327
BC857SH6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC857SH6827XTSA1
BC857SH6827XTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
IRFP250NPBF
IRFP250NPBF
Infineon Technologies
MOSFET N-CH 200V 30A TO247AC
BSC016N06NSATMA1
BSC016N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 30A/100A TDSON
IPB017N10N5ATMA1
IPB017N10N5ATMA1
Infineon Technologies
MOSFET N-CH 100V 180A TO263-7
IPD50P04P4L11ATMA1
IPD50P04P4L11ATMA1
Infineon Technologies
MOSFET P-CH 40V 50A TO252-3
SPP20N60C3
SPP20N60C3
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
BSP742RIXUMA1
BSP742RIXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 PDSO-8