IPB017N10N5ATMA1
  • Share:

Infineon Technologies IPB017N10N5ATMA1

Manufacturer No:
IPB017N10N5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 180A TO263-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IPB017N10N5ATMA1 is a high-performance N-Channel power MOSFET from Infineon Technologies, part of their OptiMOS™ 5 series. This device is specifically designed for demanding applications such as synchronous rectification in telecom blocks, including Or-ing, hotswap, and other high-power switching scenarios. The IPB017N10N5ATMA1 is known for its excellent efficiency, reliability, and robustness, making it a preferred choice in various industrial and automotive applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)273 A
RDS(on) (On-State Resistance)1.75 mΩ (typical at VGS = 10 V)
VGS(th) (Threshold Voltage)2.5 V to 4 V
PD (Power Dissipation)Dependent on package and thermal conditions
Package7-Pin D2PAK

Key Features

  • High current capability of up to 273 A
  • Low on-state resistance (RDS(on)) of 1.75 mΩ
  • High efficiency and low power losses
  • Robust and reliable performance in high-power switching applications
  • Optimized for synchronous rectification and other high-power applications

Applications

  • Synchronous rectification in telecom blocks
  • Or-ing and hotswap applications
  • High-power switching in industrial and automotive systems
  • Power supplies and DC-DC converters
  • Motor control and drive systems

Q & A

  1. What is the maximum drain-source voltage of the IPB017N10N5ATMA1?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 273 A.
  3. What is the typical on-state resistance of the IPB017N10N5ATMA1?
    The typical on-state resistance (RDS(on)) is 1.75 mΩ at VGS = 10 V.
  4. In what package is the IPB017N10N5ATMA1 available?
    The IPB017N10N5ATMA1 is available in a 7-Pin D2PAK package.
  5. What are the primary applications of the IPB017N10N5ATMA1?
    The primary applications include synchronous rectification in telecom blocks, Or-ing, hotswap, and other high-power switching scenarios.
  6. Is the IPB017N10N5ATMA1 suitable for automotive applications?
    Yes, it is suitable for automotive applications due to its high reliability and robust performance.
  7. What is the threshold voltage range of the IPB017N10N5ATMA1?
    The threshold voltage (VGS(th)) range is 2.5 V to 4 V.
  8. How does the IPB017N10N5ATMA1 contribute to efficiency in power systems?
    It contributes to high efficiency through its low on-state resistance and minimized power losses.
  9. Can the IPB017N10N5ATMA1 be used in motor control systems?
    Yes, it can be used in motor control and drive systems due to its high current capability and low power losses.
  10. Where can I purchase the IPB017N10N5ATMA1?
    You can purchase it from distributors such as Digi-Key, RS Components, and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 279µA
Gate Charge (Qg) (Max) @ Vgs:210 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:15600 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
0 Remaining View Similar

In Stock

$8.59
18

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB017N10N5ATMA1 IPB027N10N5ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V 2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 279µA 3.8V @ 184µA
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V 139 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 15600 pF @ 50 V 10300 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 375W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7 PG-TO263-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70

Related Product By Brand

BAT54-05WH6327
BAT54-05WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS4004E6327HTSA1
BAS4004E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAV74E6327
BAV74E6327
Infineon Technologies
RECTIFIER DIODE
BAV 99 B6327
BAV 99 B6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BFG135AE6327XT
BFG135AE6327XT
Infineon Technologies
RF TRANS NPN 15V 6GHZ SOT223-4
BCV47E6327HTSA1
BCV47E6327HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BCP5416E6433HTMA1
BCP5416E6433HTMA1
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
IRLML6402TRPBF-1
IRLML6402TRPBF-1
Infineon Technologies
MOSFET P-CH 20V 3.7A SOT23
TLE52062GAUMA1
TLE52062GAUMA1
Infineon Technologies
IC MOTOR DRIVER 5.3V-40V TO263-7
XDPE12284C0000XUMA1
XDPE12284C0000XUMA1
Infineon Technologies
IC REG LINEAR VOLTAGE NEG