IPB017N10N5ATMA1
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Infineon Technologies IPB017N10N5ATMA1

Manufacturer No:
IPB017N10N5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 180A TO263-7
Delivery:
Payment:
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Product Introduction

Overview

The IPB017N10N5ATMA1 is a high-performance N-Channel power MOSFET from Infineon Technologies, part of their OptiMOS™ 5 series. This device is specifically designed for demanding applications such as synchronous rectification in telecom blocks, including Or-ing, hotswap, and other high-power switching scenarios. The IPB017N10N5ATMA1 is known for its excellent efficiency, reliability, and robustness, making it a preferred choice in various industrial and automotive applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)273 A
RDS(on) (On-State Resistance)1.75 mΩ (typical at VGS = 10 V)
VGS(th) (Threshold Voltage)2.5 V to 4 V
PD (Power Dissipation)Dependent on package and thermal conditions
Package7-Pin D2PAK

Key Features

  • High current capability of up to 273 A
  • Low on-state resistance (RDS(on)) of 1.75 mΩ
  • High efficiency and low power losses
  • Robust and reliable performance in high-power switching applications
  • Optimized for synchronous rectification and other high-power applications

Applications

  • Synchronous rectification in telecom blocks
  • Or-ing and hotswap applications
  • High-power switching in industrial and automotive systems
  • Power supplies and DC-DC converters
  • Motor control and drive systems

Q & A

  1. What is the maximum drain-source voltage of the IPB017N10N5ATMA1?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 273 A.
  3. What is the typical on-state resistance of the IPB017N10N5ATMA1?
    The typical on-state resistance (RDS(on)) is 1.75 mΩ at VGS = 10 V.
  4. In what package is the IPB017N10N5ATMA1 available?
    The IPB017N10N5ATMA1 is available in a 7-Pin D2PAK package.
  5. What are the primary applications of the IPB017N10N5ATMA1?
    The primary applications include synchronous rectification in telecom blocks, Or-ing, hotswap, and other high-power switching scenarios.
  6. Is the IPB017N10N5ATMA1 suitable for automotive applications?
    Yes, it is suitable for automotive applications due to its high reliability and robust performance.
  7. What is the threshold voltage range of the IPB017N10N5ATMA1?
    The threshold voltage (VGS(th)) range is 2.5 V to 4 V.
  8. How does the IPB017N10N5ATMA1 contribute to efficiency in power systems?
    It contributes to high efficiency through its low on-state resistance and minimized power losses.
  9. Can the IPB017N10N5ATMA1 be used in motor control systems?
    Yes, it can be used in motor control and drive systems due to its high current capability and low power losses.
  10. Where can I purchase the IPB017N10N5ATMA1?
    You can purchase it from distributors such as Digi-Key, RS Components, and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 279µA
Gate Charge (Qg) (Max) @ Vgs:210 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:15600 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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In Stock

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Similar Products

Part Number IPB017N10N5ATMA1 IPB027N10N5ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V 2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 279µA 3.8V @ 184µA
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V 139 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 15600 pF @ 50 V 10300 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 375W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7 PG-TO263-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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