IPW65R041CFD7XKSA1
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Infineon Technologies IPW65R041CFD7XKSA1

Manufacturer No:
IPW65R041CFD7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
650V FET COOLMOS TO247
Delivery:
Payment:
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Product Introduction

Overview

The IPW65R041CFD7XKSA1 is a high-performance N-channel power MOSFET produced by Infineon Technologies. This component is designed to offer high efficiency and reliability in various power management applications. It features a robust TO-247 package, making it suitable for high-power switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
Continuous Drain Current (Id)50 A
On-State Resistance (Rds(on))41 mΩ (typical at Vgs = 10 V)
Gate Threshold Voltage (Vgs(th))3.5 V to 5 V
Package TypeTO-247
Operating Junction Temperature-40°C to 175°C

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Continuous drain current of 50 A, ensuring high current handling capability.
  • Low on-state resistance (Rds(on)) of 41 mΩ, which minimizes power losses and enhances efficiency.
  • Robust TO-247 package for reliable performance in demanding environments.
  • Wide operating junction temperature range from -40°C to 175°C.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Renewable energy systems such as solar and wind power.
  • Industrial power management and control systems.
  • Automotive and electric vehicle applications.

Q & A

  1. What is the voltage rating of the IPW65R041CFD7XKSA1 MOSFET? The voltage rating is 650 V.
  2. What is the continuous drain current of this MOSFET? The continuous drain current is 50 A.
  3. What is the typical on-state resistance of this MOSFET? The typical on-state resistance is 41 mΩ at Vgs = 10 V.
  4. What is the package type of the IPW65R041CFD7XKSA1? The package type is TO-247.
  5. What is the operating junction temperature range of this MOSFET? The operating junction temperature range is from -40°C to 175°C.
  6. What are some common applications for this MOSFET? Common applications include power supplies, motor control systems, renewable energy systems, industrial power management, and automotive systems.
  7. Where can I find detailed specifications for the IPW65R041CFD7XKSA1? Detailed specifications can be found on the datasheet available from sources like Mouser, Digi-Key, and Infineon's official website.
  8. Is the IPW65R041CFD7XKSA1 suitable for high-power switching applications? Yes, it is designed for high-power switching applications due to its high voltage and current ratings.
  9. What is the gate threshold voltage range for this MOSFET? The gate threshold voltage range is from 3.5 V to 5 V.
  10. Can I use this MOSFET in automotive applications? Yes, it is suitable for automotive and electric vehicle applications due to its robust specifications and wide operating temperature range.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 24.8A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs:102 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4975 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):227W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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