IRF4905STRLPBF
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Infineon Technologies IRF4905STRLPBF

Manufacturer No:
IRF4905STRLPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 55V 42A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF4905STRLPBF is a high-performance power MOSFET produced by Infineon Technologies. This device is part of the OptiMOS™ family, known for its high efficiency and reliability in various power management applications. The IRF4905STRLPBF is designed to provide low on-state resistance, fast switching times, and high current handling capabilities, making it an ideal choice for demanding power electronics applications.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)55V
VGS (Gate-Source Voltage)±20V
ID (Continuous Drain Current)74A
RDS(on) (On-State Resistance)2.5mΩ
PD (Power Dissipation)280W
TJ (Junction Temperature)-55 to 150°C
PackageTO-263 (D2PAK)

Key Features

  • Low on-state resistance (RDS(on)) for high efficiency
  • High current handling capability
  • Fast switching times for improved performance
  • High junction temperature range for reliability in harsh environments
  • TO-263 (D2PAK) package for ease of mounting and thermal management

Applications

  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Power factor correction (PFC) circuits
  • Switch-mode power supplies
  • Automotive and industrial power management systems

Q & A

  1. What is the maximum drain-source voltage of the IRF4905STRLPBF?
    The maximum drain-source voltage (VDS) is 55 V.
  2. What is the continuous drain current rating of the IRF4905STRLPBF?
    The continuous drain current (ID) is 74 A.
  3. What is the on-state resistance of the IRF4905STRLPBF?
    The on-state resistance (RDS(on)) is 2.5 mΩ.
  4. What is the junction temperature range of the IRF4905STRLPBF?
    The junction temperature range is -55°C to 150°C.
  5. In what package is the IRF4905STRLPBF available?
    The IRF4905STRLPBF is available in the TO-263 (D2PAK) package.
  6. What are some common applications for the IRF4905STRLPBF?
    Common applications include DC-DC converters, motor control systems, power factor correction circuits, and switch-mode power supplies.
  7. Why is the IRF4905STRLPBF considered high-performance?
    The IRF4905STRLPBF is considered high-performance due to its low on-state resistance, fast switching times, and high current handling capabilities.
  8. Is the IRF4905STRLPBF suitable for automotive applications?
    Yes, the IRF4905STRLPBF is suitable for automotive and industrial power management systems due to its robust specifications and reliability.
  9. What is the power dissipation rating of the IRF4905STRLPBF?
    The power dissipation rating (PD) is 280 W.
  10. Where can I find detailed specifications for the IRF4905STRLPBF?
    Detailed specifications can be found on the official Infineon Technologies website or through distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IRF4905SPBF
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Similar Products

Part Number IRF4905STRLPBF IRF4905STRRPBF
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 42A, 10V 20mOhm @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 25 V 3500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 170W (Tc) 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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