BFS17WH6327XTSA1
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Infineon Technologies BFS17WH6327XTSA1

Manufacturer No:
BFS17WH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 1.4GHZ SOT323-3
Delivery:
Payment:
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Product Introduction

Overview

The BFS17WH6327XTSA1 is a high-frequency NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for surface mount applications and is particularly suited for RF (radio frequency) and high-frequency amplification tasks. It features a compact SOT323 package, making it ideal for space-constrained designs.

Key Specifications

Parameter Value Unit
Manufacturer Infineon Technologies
Type of transistor NPN
Polarisation Bipolar
Kind of transistor RF
Collector-emitter voltage 15V
Collector current 25mA
Power dissipation 0.28W
Case SOT323
Current gain 20...150
Mounting SMD
Kind of package Reel, tape
Frequency 2.5GHz
Halogen-free Yes
Pb-free Yes
RoHS compliant Yes

Key Features

The BFS17WH6327XTSA1 offers several key features that make it suitable for high-frequency applications:

  • High Frequency Capability: The transistor operates up to 2.5 GHz, making it ideal for RF and microwave applications.
  • Low Power Consumption: With a power dissipation of 0.28W, it is energy-efficient and suitable for battery-powered devices.
  • Compact Package: The SOT323 package is compact and suitable for space-constrained designs.
  • Environmental Compliance: The transistor is halogen-free, Pb-free, and RoHS compliant, ensuring it meets environmental regulations.
  • High Current Gain: The current gain range of 20 to 150 ensures reliable amplification performance.

Applications

The BFS17WH6327XTSA1 is versatile and can be used in various applications, including:

  • RF Amplifiers: Suitable for amplifying RF signals in transceivers and other communication equipment.
  • High-Frequency Switching: Can be used in high-frequency switching applications due to its fast switching times.
  • Microwave Circuits: Applicable in microwave circuits where high-frequency operation is required.
  • Wireless Communication Devices: Used in wireless communication devices such as mobile phones, Wi-Fi routers, and other wireless communication equipment.

Q & A

  1. What is the collector-emitter voltage of the BFS17WH6327XTSA1?

    The collector-emitter voltage is 15V.

  2. What is the maximum collector current of the BFS17WH6327XTSA1?

    The maximum collector current is 25mA.

  3. What is the power dissipation of the BFS17WH6327XTSA1?

    The power dissipation is 0.28W.

  4. What is the package type of the BFS17WH6327XTSA1?

    The package type is SOT323.

  5. Is the BFS17WH6327XTSA1 RoHS compliant?

    Yes, it is RoHS compliant.

  6. What is the frequency range of the BFS17WH6327XTSA1?

    The transistor operates up to 2.5 GHz.

  7. Is the BFS17WH6327XTSA1 halogen-free and Pb-free?

    Yes, it is both halogen-free and Pb-free.

  8. What is the current gain range of the BFS17WH6327XTSA1?

    The current gain range is 20 to 150.

  9. What are some common applications of the BFS17WH6327XTSA1?

    Common applications include RF amplifiers, high-frequency switching, microwave circuits, and wireless communication devices.

  10. Is the BFS17WH6327XTSA1 suitable for surface mount applications?

    Yes, it is designed for surface mount applications.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:1.4GHz
Noise Figure (dB Typ @ f):3.5dB ~ 5dB @ 800MHz
Gain:- 
Power - Max:280mW
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 2mA, 1V
Current - Collector (Ic) (Max):25mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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Same Series
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Similar Products

Part Number BFS17WH6327XTSA1 BFS17SH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Obsolete
Transistor Type NPN 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) 15V 15V
Frequency - Transition 1.4GHz 1.4GHz
Noise Figure (dB Typ @ f) 3.5dB ~ 5dB @ 800MHz 3dB ~ 5dB @ 800MHz
Gain - -
Power - Max 280mW 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 1V 40 @ 2mA, 1V
Current - Collector (Ic) (Max) 25mA 25mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT323 PG-SOT363-PO

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